MRF8S21120HSR3 vs MRF8S21100HSR3 비교
다음의 상세 나란히 비교: MRF8S21120HSR3 제조: NXP Semiconductors 및 MRF8S21100HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S21120HSR3 | MRF8S21100HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $59.95 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF8S21120HSR3 | — |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 2110-2170 MHz | 2110 MHz to 2170 MHz |
| Output Power (P1dB / average) | 28 W average, W-CDMA / LTE | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Operating Drain Voltage | 28 V | — |
| Power Gain (Typical) | 17.6 dB at 2.17 GHz | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: datasheet efficiency figure] | — |
| Operating Mode | Class AB / Class C | — |
| Package Type | NI-780HS (ceramic flange) | — |
| Case Mounting | Source on case (flange grounding) | — |
| 핀 수 | 2-pin (Gate, Drain) | — |
| 장착 스타일 | Through-hole / bolt-down flange | — |
| MSL 레벨 | 1 (unlimited) | — |
| RoHS 상태 | RoHS compliant | Compliant (per NXP product family) |
| Lead-Free | Yes | Yes |
| 트랜지스터 유형 | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| 패키지 / 케이스 | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| 실장 유형 | — | Chassis / flange mount, screw-down |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |