RTAX2000S-1CG624PROTO vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX2000S-1CG624PROTO par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000S-1CG624PROTO | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2000000 | 2000000 |
| Logic Cells | 32256 | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Embedded Memory | 540 kbits (family max, with optional EDAC) | Up to 540 kbits with optional EDAC |
| User I/Os (family max) | 684 | — |
| Total Ionizing Dose (functional) | 300 krad (Si) | — |
| Total Ionizing Dose (parametric) | 200 krad (Si) | — |
| SEU Rate | Less than 1E-10 errors per bit-day | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | 350 MHz (family performance) | — |
| Technology | CMOS antifuse (one-time programmable) | Digital CMOS, antifuse nonvolatile |
| Speed Grade | -1 | -1 |
| Boîtier | CCGA-624 (CG624 ceramic column grid array) | 624-ball ceramic CGA (CGS624) |
| Configuration | Live at power-up (nonvolatile antifuse) | One-time programmable (OTP), live at power-up, single chip |
| Qualification Flow | PROTO (engineering prototype) | — |
| Type de montage | Surface Mount | Surface Mount |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |