RTAX2000S-1CG624PROTO vs RTAX2000SL-1CGS624V Сравнение

Подробное сравнение бок о бок RTAX2000S-1CG624PROTO от Microchip Technology и RTAX2000SL-1CGS624V от Microsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

Microchip Technology
RTAX2000S-1CG624PROTO RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO ✓ Активен
Microsemi
RTAX2000SL-1CGS624V RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip

RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip

RTAX2000SL-1CGS624V ✓ Активен

Сравнение характеристик

Параметр RTAX2000S-1CG624PROTO RTAX2000SL-1CGS624V
Бренд Microchip Technology Microsemi
Категория FPGA & CPLD FPGA & CPLD
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $0,00 $0,00
Equivalent System Gates 2000000 2000000
Logic Cells 32256 —
Configurable Logic Blocks (CLBs) 21504 —
Embedded Memory 540 kbits (family max, with optional EDAC) Up to 540 kbits with optional EDAC
User I/Os (family max) 684 —
Total Ionizing Dose (functional) 300 krad (Si) —
Total Ionizing Dose (parametric) 200 krad (Si) —
SEU Rate Less than 1E-10 errors per bit-day Less than 1E-10 errors per bit-day
Maximum System Frequency 350 MHz (family performance) —
Technology CMOS antifuse (one-time programmable) Digital CMOS, antifuse nonvolatile
Speed Grade -1 -1
Корпус CCGA-624 (CG624 ceramic column grid array) 624-ball ceramic CGA (CGS624)
Configuration Live at power-up (nonvolatile antifuse) One-time programmable (OTP), live at power-up, single chip
Qualification Flow PROTO (engineering prototype) —
Тип монтажа Surface Mount Surface Mount
Family RTAX-S/SL Radiation-Tolerant FPGA —
Статус RoHS [DATA_NEEDED: RoHS status] —
Рабочая температура [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Logic Cells (CLBs) — 21504
User I/Os (max, package dependent) — Up to 684
Total Ionizing Dose (TID) — 300 krad (functional), 200 krad (parametric)
Quality / Screening Suffix — S (space flow), V suffix qualification level
Core Supply Voltage — [DATA_NEEDED: core supply voltage]
I/O Supply Voltage — [DATA_NEEDED: I/O supply voltage]
Embedded SRAM Features — Built-in FIFO control logic
Clocking — Segmentable clocks, chip-wide highway routing

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