RTAX2000S-1CG624PROTO vs RTAX2000SL-1CGS624V Comparação
Comparação detalhada lado a lado de RTAX2000S-1CG624PROTO por Microchip Technology e RTAX2000SL-1CGS624V por Microsemi. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Microchip Technology
RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CG624PROTO ✓ AtivoMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ AtivoComparação de especificações
| Parâmetro | RTAX2000S-1CG624PROTO | RTAX2000SL-1CGS624V |
|---|---|---|
| Marca | Microchip Technology | Microsemi |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 2000000 | 2000000 |
| Logic Cells | 32256 | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Embedded Memory | 540 kbits (family max, with optional EDAC) | Up to 540 kbits with optional EDAC |
| User I/Os (family max) | 684 | — |
| Total Ionizing Dose (functional) | 300 krad (Si) | — |
| Total Ionizing Dose (parametric) | 200 krad (Si) | — |
| SEU Rate | Less than 1E-10 errors per bit-day | Less than 1E-10 errors per bit-day |
| Maximum System Frequency | 350 MHz (family performance) | — |
| Technology | CMOS antifuse (one-time programmable) | Digital CMOS, antifuse nonvolatile |
| Speed Grade | -1 | -1 |
| Encapsulamento | CCGA-624 (CG624 ceramic column grid array) | 624-ball ceramic CGA (CGS624) |
| Configuration | Live at power-up (nonvolatile antifuse) | One-time programmable (OTP), live at power-up, single chip |
| Qualification Flow | PROTO (engineering prototype) | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |