RTAX250SL-CG624B vs RTAX2000SL-1CGS624V Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng RTAX250SL-CG624B sa pamamagitan ng Microchip Technology at RTAX2000SL-1CGS624V sa pamamagitan ng Microsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
RTAX250SL-CG624B - 250K Rad-Tolerant FPGA 624-CCGA | Microchip
RTAX250SL-CG624B ✓ NakahandaMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ NakahandaPagsanggunian na paghahambing
| Parametro | RTAX250SL-CG624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Brand | Microchip Technology | Microsemi |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | RTAX-SL (Radiation-Tolerant FPGA) | — |
| Equivalent System Gates | 250000 gates | 2000000 |
| Logic Cells / CLBs | 2816 cells | — |
| Maksimum na Taktiko ng Oras | 649 MHz | — |
| Combinatorial Delay (CLB) | 0.930 ns max | — |
| Process Technology | 0.15 um antifuse | — |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Packhaging | 624-ball CCGA (CG624) | 624-ball ceramic CGA (CGS624) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration Technology | Antifuse (single-chip, live at power-up) | — |
| Embedded Memory | Embedded SRAM with FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | — |
| Programmability Type | Field Programmable Gate Array (one-time programmable) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| I/O Supply Voltage | [DATA_NEEDED: I/O supply voltage] | [DATA_NEEDED: I/O supply voltage] |
| Number of User I/Os (CG624) | [DATA_NEEDED: number of user I/Os] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Technology | — | Digital CMOS, antifuse nonvolatile |
| Speed Grade | — | -1 |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |