SSM3K35CT-L3F vs 2N7002L Comparaison
Comparaison détaillée côte à côte de SSM3K35CT-L3F par Toshiba et 2N7002L par onsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | SSM3K35CT-L3F | 2N7002L |
|---|---|---|
| Marque | Toshiba | onsemi |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,09 | $0,03 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (V(DSS)) | 20 V | — |
| Gate-Source Voltage (V(GSS)) | ±10 V (per datasheet, [DATA_NEEDED: exact value]) | — |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] | — |
| Power Dissipation (P_D) | 500 mW (Ta) / [DATA_NEEDED: Ta condition] | — |
| Boîtier | SOT-883 (CST3), 3 pins | SOT-23 (SOT-23-3) |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: junction/storage temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1 V to 2.5 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Lead-Free | Yes (L3F suffix) | — |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) | — |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation | onsemi |
| Type de transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Technology | — | High cell density trench MOSFET |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |