SSM3K35CT-L3F - 20V 0.18A N-Channel MOSFET SOT-883 | Toshiba
Référence : SSM3K35CT-L3F ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.34 | $0,34 |
| 10 | $0.27 | $2,70 |
| 100 | $0.18 | $18,00 |
| 500 | $0.12 | $60,00 |
| 1 000 | $0.09 | $90,00 |
SSM3K35CT-L3F Présentation
What is an N-channel MOSFET? An N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor device whose majority carriers are electrons. The technology sits inside the broader taxonomy of discrete semiconductors → transistors → MOSFETs → small-signal MOSFETs, and is the workhorse of low-voltage load switching, level shifting, and analog multiplexing. A small-signal N-channel MOSFET like the SSM3K35CT is optimized for very low gate charge, fast switching edges, and minimal on-state resistance at low drain currents, making it the preferred building block when a bipolar transistor is too slow or too leaky.
Key differentiating features include a rated gate threshold voltage compatible with 1.8 V/2.5 V/3.3 V logic drive, a single die in a 3-pin CST3 package measuring only 1.0 mm x 0.6 mm with a maximum height of 0.5 mm, and a rated power dissipation that supports portable and wearable designs. The part is lead-free, RoHS-compliant, and qualified for standard reflow profiles. Its low input capacitance translates into sub-10 ns turn-on and turn-off times, which is critical for high-speed analog-switch signal paths.
Architecturally, the SSM3K35CT uses a standard Toshiba UMOS-style trench cell, which gives the device a low figure of merit (RDS(on) x Qg) for its current class. The 20 V BVDSS rating provides comfortable margin for 5 V USB rails, 3.3 V logic, and 12 V point-of-load distribution, while the 3.0 Ω on-resistance at 4 VGS keeps conduction losses low for sub-100 mA loads such as indicator LEDs, bias gates, and reset lines. The compact SOT-883 footprint allows dense PCB placement next to passive protection or filtering networks.
Typical applications include high-speed analog switching in audio multiplexers, load switching in portable and wearable electronics, level-shifting interfaces between low-voltage microcontrollers and 5 V peripherals, USB On-The-Go (OTG) power-path management, reset-distribution and gate-driver pre-driver stages, and LED matrix row/column drivers for small-format displays.
When designing with the SSM3K35CT-L3F, observe the 500 mW power dissipation limit and provide adequate copper thermal relief on the SOT-883 land pattern. For switching loads above 50 mA, add a 10 kΩ gate pull-down resistor to guarantee a defined off-state when the driving logic enters high-impedance during reset or sleep.
This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers a single source for engineering and procurement decisions.
Alternatives de remplacement direct pour SSM3K35CT-L3F — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec SSM3K35CT-L3F (même facteur de forme et même empreinte) — différant par Package, Continuous Drain Current (ID), Lead-Free, Manufacturer, Power Dissipation (PD).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
SSM3K35CTC-L3F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SSM3J35CT-L3F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SSM3K35CT
✅ Remplacement direct✓ En stock
$0.15 / unité
Voir la fiche technique →2N7002L
✅ Remplacement direct✓ En stock
$0.028 / unité
Voir la fiche technique →SSM3K35CT-L3F Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Voltage (V(DSS)) | 20 V |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) |
| On-Resistance (RDS(on)) | 3.0 Ω at VGS = 4 V |
| Boîtier | SOT-883 (CST3), 3 pins |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm |
| Type de montage | Surface Mount |
| Lead-Free | Yes (L3F suffix) |
| Statut RoHS | Compliant |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation |
Configuration des broches de SSM3K35CT-L3F
| Broche 1 | Gate — MOSFET gate input; driven by logic level via series resistor |
| Broche 2 | Source — MOSFET source terminal; tied to GND in low-side switching |
| Broche 3 | Drain — MOSFET drain terminal; load return path or high-side connection |
Applications typiques
SSM3K35CT-L3F convient pour 6 applications: High-Speed Analog Switch / Signal Multiplexer, Load Switching in Portable and Wearable Electronics, Logic-Level Translation / Level Shifter, USB On-The-Go (OTG) and VBUS Power-Path Management, Reset Distribution and Gate-Driver Pre-Driver Stages, LED Matrix Row/Column Drivers for Small Displays.
High-Speed Analog Switch / Signal Multiplexer
The SSM3K35CT-L3F is a strong fit for high-speed analog switching in audio multiplexers and signal-routing blocks. The N-channel MOSFET's 20 V V(DSS) comfortably handles analog signal swings above 5 V, while the low RDS(on) of 3.0 Ω at 4 VGS minimizes insertion loss and distortion when used as a T-switch element. The 3-pin SOT-883 package enables dense mux ICs that route multiple audio sources, USB data lines, or sensor signals through tiny footprints. For audio applications, the SSM3K35CT-L3F's low on-resistance keeps series-impedance loss below 1 dB even at 20 kHz, and its low gate charge ensures switching transients settle within microseconds - critical for click-free audio source transitions. Compared to a 2N7002 in SOT-23, the SSM3K35CT-L3F saves roughly 4x PCB area per switch.
Recommandé
Load Switching in Portable and Wearable Electronics
The SSM3K35CT-L3F is well-suited for low-side load switching in battery-powered portable and wearable designs. With 0.18 A continuous drain current and 20 V V(DSS), it can switch indicator LEDs, sensor power rails, and peripheral enables from a 1.8 V / 3.3 V microcontroller GPIO. The 1.0 mm x 0.6 mm SOT-883 footprint fits on wearable PCBs where every square millimeter counts, and the 500 mW power dissipation limit provides ample headroom for sub-100 mA continuous loads. When paired with a gate pull-down resistor to guarantee off-state during MCU sleep, the SSM3K35CT-L3F acts as a low-leakage load switch that adds only nanowatts of quiescent loss, compared to dozens of microamps from integrated load-switch ICs.
Recommandé
Logic-Level Translation / Level Shifter
The SSM3K35CT-L3F serves as a compact discrete level-shifting element for translating between low-voltage (1.8 V / 3.3 V) MCUs and 5 V peripherals. With 3.0 Ω RDS(on) and full enhancement above 4 VGS, it can pass digital signals up to several MHz in open-drain or push-pull translation topologies. The SOT-883 package enables bidirectional or direction-controlled level shifters on dense translator cards, far smaller than the SOT-23 alternatives. For I2C, SPI, or UART signals, the SSM3K35CT-L3F provides sufficient bandwidth and low capacitance to maintain signal integrity, while its 20 V V(DSS) supports legacy 12 V logic rails often found in industrial peripherals.
Recommandé
USB On-The-Go (OTG) and VBUS Power-Path Management
The SSM3K35CT-L3F is a useful component in USB OTG and VBUS power-path designs where a small-signal N-channel MOSFET handles 5 V rail multiplexing at modest currents. With 0.18 A continuous rating and 20 V V(DSS), it can switch VBUS to downstream devices, ID-pin detection, and protection circuits without exceeding ratings. The fast switching speed makes it suitable for OVP/UVP comparators that gate the VBUS path within microseconds. While high-current USB switches use dedicated power-path ICs, the SSM3K35CT-L3F is a strong choice for low-power peripherals, indicator LEDs, and signal-level switching where cost and size dominate.
Recommandé
Reset Distribution and Gate-Driver Pre-Driver Stages
The SSM3K35CT-L3F can serve as a low-impedance reset-distribution element or as a pre-driver stage for larger power MOSFETs. Its 20 V V(DSS), 0.18 A I(D), and 3.0 Ω RDS(on) make it useful for buffering active-low reset signals or driving the gate of a follow-up power device. In discrete gate-driver chains, the SSM3K35CT-L3F can be added between a logic output and the main FET to invert logic level, add hysteresis, or implement pulse-stretching. The compact SOT-883 footprint keeps reset-distribution networks compact on the same PCB as the main MCU and power section.
Recommandé
LED Matrix Row/Column Drivers for Small Displays
The SSM3K35CT-L3F is well matched to small LED-matrix displays and backlight multiplexer designs that demand many switches in a small area. With 0.18 A drain current and 20 V V(DSS), each pixel or row driver can sink an LED segment at typical 5 mA to 20 mA currents. The 3.0 Ω RDS(on) keeps brightness variation between rows minimal, and the SOT-883 (CST3) package allows tight spacing of 0.5 mm pitch between drivers. Compared to integrated LED drivers, the SSM3K35CT-L3F gives designers full PWM control and works for character LCD bias supplies, RGB indicators, and dot-matrix panels under 1 A total.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour SSM3K35CT-L3F — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | SSM3K35CTC-L3F | SSM3J35CT-L3F | SSM3K35CT |
|---|---|---|---|---|
| Package | SOT-883 (CST3) | SOT-883 (CST3) - same | SOT-883 (CST3) - same | SOT-883 (CST3) - same |
| Brand | Toshiba | Toshiba (same brand) | Toshiba (same brand) | Toshiba (same brand) |
| Polarity | N-Channel | N-Channel | P-Channel (complementary) | N-Channel |
| V(DSS) Max | 20 V | 20 V | 20 V | 20 V |
| Continuous Drain Current | 0.18 A | 0.25 A | 0.10 A | 0.18 A |
| Tape & Reel | 8 mm L3F (3000 pcs) | 8 mm L3F (3000 pcs) | 8 mm L3F (3000 pcs) | Bulk / non-L3F |
Principaux différenciateurs
- Ultra-small SOT-883 (CST3) footprint at 1.0 mm x 0.6 mm (vs 2N7002 in SOT-23)
- Lower RDS(on) with same-package upgrade path (vs SSM3K35CTC-L3F)
- Tape-and-reel packaging qualified for 3,000-piece reels (L3F suffix) (vs SSM3K35CT (no L3F suffix))
Notes de conception
The SOT-883 (CST3) package dissipates 500 mW at Ta = 25 C on the standard JEDEC test board, but in real PCBs with limited copper thermal relief the actual limit is lower. Estimated: with 100 mm² of 1 oz copper tied to Source and Drain pads, sustained current above 100 mA at 20 V VDS drives the junction rapidly toward thermal shutdown. Provide at least 50 mm² copper on each terminal pad for sub-100 mA continuous operation.
Use a SOT-883 land pattern with 0.4 mm x 0.3 mm pads on 0.65 mm pitch - the small package demands precise stencil aperture design (0.4 mm laser-cut, 0.1 mm thickness). Place a 10 kΩ gate pull-down resistor within 2 mm of the gate pin to guarantee a defined off-state when the driving MCU enters high-impedance during reset or sleep. Source should connect to a low-impedance ground pour to avoid body-diode sneak paths in analog-switch topologies.
Do not drive the gate with voltages exceeding the datasheet V(GSS) maximum (±10 V typical for Toshiba small-signal MOSFETs - verify exact value). Do not operate the SSM3K35CT-L3F above 0.18 A continuous drain current - the SSM3K35CTC variant is the drop-in upgrade for higher current. Do not exceed 20 V V(DSS) including inductive transients - add a TVS or snubber if switching relays or motors.
Estimated: at VGS = 4 V, the SSM3K35CT-L3F's on-resistance is 3.0 Ω, but at VGS = 2.5 V the RDS(on) roughly doubles to ~6 Ω, attenuating analog signals below 0.5 dB. For audio analog switches, drive the gate from 4.5 V to 5 V to keep RDS(on) low and harmonic distortion under 0.05%. Add a 1 MΩ gate-source resistor to ensure DC-biased off-state stability when driven by high-impedance signal sources.
Informations de conformité
RoHS compliance confirmed per L3F suffix and Toshiba part-number convention (lead-free). REACH, AEC-Q100 (not applicable for small-signal MOSFETs intended for general commercial use), halogen-free, and conflict-minerals status are not explicitly stated in verified data and should be confirmed directly with Toshiba if required for procurement.
