SSM3K35CT-L3F vs 2N7002L 对比
详细并排对比 SSM3K35CT-L3F 出自 Toshiba 和 2N7002L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | SSM3K35CT-L3F | 2N7002L |
|---|---|---|
| 品牌 | Toshiba | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.09 | $0.03 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (V(DSS)) | 20 V | — |
| Gate-Source Voltage (V(GSS)) | ±10 V (per datasheet, [DATA_NEEDED: exact value]) | — |
| Continuous Drain Current (I(D)) | 0.18 A (180 mA) | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS = 2.5 V] | — |
| Power Dissipation (P_D) | 500 mW (Ta) / [DATA_NEEDED: Ta condition] | — |
| 封装 | SOT-883 (CST3), 3 pins | SOT-23 (SOT-23-3) |
| Package Size | 1.0 mm x 0.6 mm, max height 0.5 mm | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: junction/storage temperature range] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1 V to 2.5 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Lead-Free | Yes (L3F suffix) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Tape and Reel | 8 mm embossed carrier, 3,000 pcs/reel (L3F suffix) | — |
| Manufacturer | Toshiba Electronic Devices & Storage Corporation | onsemi |
| 晶体管类型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Technology | — | High cell density trench MOSFET |
| Configuration | — | Single FET |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |