STW45NM60-H vs SPW47N60C3 Comparaison
Comparaison détaillée côte à côte de STW45NM60-H par STMicroelectronics et SPW47N60C3 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ ActifComparaison des spécifications
| Paramètre | STW45NM60-H | SPW47N60C3 |
|---|---|---|
| Marque | STMicroelectronics | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,78 | $6,10 |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | CoolMOS C3 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Plage de température de fonctionnement | -55 °C to +150 °C (TJ) | -55C to +150C (junction, typical for CoolMOS C3) |
| Boîtier | TO-247-3 (through-hole) | TO-247-3-1 (PG-TO247-3-1) through-hole |
| Type de montage | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | — |
| Statut RoHS | Compliant | Compliant |
| Part Number | — | SPW47N60C3 |
| Manufacturer | — | Infineon Technologies AG |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 47 A |
| Power Dissipation (PD) at Tc | — | 415 W |
| RDS(on) (typical) | — | 70 mOhm [DATA_NEEDED: VGS test condition] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: nanocoulombs] |
| Output Capacitance Eoss @ 400V | — | Very low (per C3 series datasheet) |
| Configuration | — | Single N-channel, 3 pins (G, D, S) |
| Lead-Free | — | Yes |
| Niveau MSL | — | N/A (through-hole) |
| Series | — | CoolMOS C3 (600V generation) |