STW45NM60-H vs SPW47N60C3 Comparação
Comparação detalhada lado a lado de STW45NM60-H por STMicroelectronics e SPW47N60C3 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ AtivoComparação de especificações
| Parâmetro | STW45NM60-H | SPW47N60C3 |
|---|---|---|
| Marca | STMicroelectronics | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,78 | $6,10 |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | CoolMOS C3 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Faixa de temperatura de operação | -55 °C to +150 °C (TJ) | -55C to +150C (junction, typical for CoolMOS C3) |
| Encapsulamento | TO-247-3 (through-hole) | TO-247-3-1 (PG-TO247-3-1) through-hole |
| Tipo de montagem | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | SPW47N60C3 |
| Manufacturer | — | Infineon Technologies AG |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 47 A |
| Power Dissipation (PD) at Tc | — | 415 W |
| RDS(on) (typical) | — | 70 mOhm [DATA_NEEDED: VGS test condition] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: nanocoulombs] |
| Output Capacitance Eoss @ 400V | — | Very low (per C3 series datasheet) |
| Configuration | — | Single N-channel, 3 pins (G, D, S) |
| Lead-Free | — | Yes |
| Nível MSL | — | N/A (through-hole) |
| Series | — | CoolMOS C3 (600V generation) |