STW45NM60-H vs SPW47N60C3 Vergleich

Detaillierter Direktvergleich von STW45NM60-H von STMicroelectronics und SPW47N60C3 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter STW45NM60-H SPW47N60C3
Marke STMicroelectronics Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,78 $6,10
FET Type N-Channel —
Technology MDmesh (super-junction) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V (650 V at TJMAX) —
Continuous Drain Current (ID) 45 A at Tc = 25 °C —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) 417 W at Tc = 25 °C —
On-Resistance (RDS(on)) 0.09 Ω typical at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 4 V typical —
Gate Charge (Qg) [DATA_NEEDED: typical total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Betriebstemperaturbereich -55 °C to +150 °C (TJ) -55C to +150C (junction, typical for CoolMOS C3)
Gehäuse TO-247-3 (through-hole) TO-247-3-1 (PG-TO247-3-1) through-hole
Montageart Through Hole Through Hole
Avalanche Rating 100% avalanche tested —
dv/dt Capability High —
RoHS-Status Compliant Compliant
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Lead-Free — Yes
MSL-Level — N/A (through-hole)
Series — CoolMOS C3 (600V generation)

Datenblätter & Ressourcen

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