STW45NM60-H vs STW45NM60 Comparaison
Comparaison détaillée côte à côte de STW45NM60-H par STMicroelectronics et STW45NM60 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ ActifComparaison des spécifications
| Paramètre | STW45NM60-H | STW45NM60 |
|---|---|---|
| Marque | STMicroelectronics | STMicroelectronics |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,78 | $4,78 |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | MDmesh Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Plage de température de fonctionnement | -55 °C to +150 °C (TJ) | -65 °C to +150 °C (junction) |
| Boîtier | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| Type de montage | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | Outstanding (MDmesh process) |
| Statut RoHS | Compliant | Compliant |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: maximum Vgs rating] |
| Continuous Drain Current (Id) at Tc=25°C | — | 45 A |
| Typical Rds(on) at Vgs=10V | — | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | — | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | — | 417 W |
| Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Avalanche Ruggedness | — | Excellent |
| Lead-Free | — | Yes |