STW45NM60-H vs STW45NM60 비교
다음의 상세 나란히 비교: STW45NM60-H 제조: STMicroelectronics 및 STW45NM60 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
STW45NM60-H - 600V 45A MDmesh N-Channel Power MOSFET | STMicroelectronics
STW45NM60-H ✓ 활성사양 비교
| 파라미터 | STW45NM60-H | STW45NM60 |
|---|---|---|
| 브랜드 | STMicroelectronics | STMicroelectronics |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.78 | $4.78 |
| FET Type | N-Channel | — |
| Technology | MDmesh (super-junction) | MDmesh Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V (650 V at TJMAX) | — |
| Continuous Drain Current (ID) | 45 A at Tc = 25 °C | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) | 417 W at Tc = 25 °C | — |
| On-Resistance (RDS(on)) | 0.09 Ω typical at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 4 V typical | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| 동작 온도 범위 | -55 °C to +150 °C (TJ) | -65 °C to +150 °C (junction) |
| 패키지 | TO-247-3 (through-hole) | TO-247-3 (through-hole) |
| 실장 유형 | Through Hole | Through Hole |
| Avalanche Rating | 100% avalanche tested | — |
| dv/dt Capability | High | Outstanding (MDmesh process) |
| RoHS 상태 | Compliant | Compliant |
| Drain-Source Voltage (Vdss) | — | 600 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: maximum Vgs rating] |
| Continuous Drain Current (Id) at Tc=25°C | — | 45 A |
| Typical Rds(on) at Vgs=10V | — | 90 mΩ |
| Typical Rds(on) at Vgs=4.5V | — | 110 mΩ |
| Maximum Power Dissipation (Pd) at Tc=25°C | — | 417 W |
| Channel Type | — | N-Channel |
| Configuration | — | Single FET |
| Avalanche Ruggedness | — | Excellent |
| Lead-Free | — | Yes |