STW45NM60-H vs STW45NM60 Vergleich

Detaillierter Direktvergleich von STW45NM60-H von STMicroelectronics und STW45NM60 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

STMicroelectronics
STW45NM60 STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 - 600V 45A MDmesh Power MOSFET | STMicroelectronics

STW45NM60 ✓ Aktiv

Spezifikationsvergleich

Parameter STW45NM60-H STW45NM60
Marke STMicroelectronics STMicroelectronics
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,78 $4,78
FET Type N-Channel —
Technology MDmesh (super-junction) MDmesh Power MOSFET
Drain-Source Voltage (VDS) 600 V (650 V at TJMAX) —
Continuous Drain Current (ID) 45 A at Tc = 25 °C —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) 417 W at Tc = 25 °C —
On-Resistance (RDS(on)) 0.09 Ω typical at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 4 V typical —
Gate Charge (Qg) [DATA_NEEDED: typical total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Betriebstemperaturbereich -55 °C to +150 °C (TJ) -65 °C to +150 °C (junction)
Gehäuse TO-247-3 (through-hole) TO-247-3 (through-hole)
Montageart Through Hole Through Hole
Avalanche Rating 100% avalanche tested —
dv/dt Capability High Outstanding (MDmesh process)
RoHS-Status Compliant Compliant
Drain-Source Voltage (Vdss) — 600 V
Gate-Source Voltage (Vgs) — [DATA_NEEDED: maximum Vgs rating]
Continuous Drain Current (Id) at Tc=25°C — 45 A
Typical Rds(on) at Vgs=10V — 90 mΩ
Typical Rds(on) at Vgs=4.5V — 110 mΩ
Maximum Power Dissipation (Pd) at Tc=25°C — 417 W
Channel Type — N-Channel
Configuration — Single FET
Avalanche Ruggedness — Excellent
Lead-Free — Yes

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