UCC21550ADWR vs UCC21550BDWR Comparaison
Comparaison détaillée côte à côte de UCC21550ADWR par Texas Instruments et UCC21550BDWR par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ ActifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActifComparaison des spécifications
| Paramètre | UCC21550ADWR | UCC21550BDWR |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,19 | $0,88 |
| Number of Channels | 2 (dual) | — |
| Configuration | Dual low-side, dual high-side, or half-bridge | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Reinforced, capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI | > 125 V/ns | — |
| Max VDD Output Supply | 25 V | — |
| UVLO Threshold Option | 5 V | — |
| Dead Time | Programmable | — |
| Disable Function | Yes (DISABLE pin) | Yes |
| Driven Devices | Power MOSFET, SiC, GaN, IGBT | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Junction Temperature Range | -40C to +150C | -40 C to +150 C |
| Boîtier | 16-SOIC (DW) | 16-SOIC (DW) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Configuration de sortie | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |