UCC21550ADWR vs UCC21550BDWR 비교
다음의 상세 나란히 비교: UCC21550ADWR 제조: Texas Instruments 및 UCC21550BDWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ 활성Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 활성사양 비교
| 파라미터 | UCC21550ADWR | UCC21550BDWR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.19 | $0.88 |
| Number of Channels | 2 (dual) | — |
| Configuration | Dual low-side, dual high-side, or half-bridge | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Reinforced, capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI | > 125 V/ns | — |
| Max VDD Output Supply | 25 V | — |
| UVLO Threshold Option | 5 V | — |
| Dead Time | Programmable | — |
| Disable Function | Yes (DISABLE pin) | Yes |
| Driven Devices | Power MOSFET, SiC, GaN, IGBT | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Junction Temperature Range | -40C to +150C | -40 C to +150 C |
| 패키지 | 16-SOIC (DW) | 16-SOIC (DW) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS status] |
| 출력 구성 | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |