UCC21550ADWR vs UCC21550BDWR 比較
詳細な並列比較: UCC21550ADWR メーカー: Texas Instruments および UCC21550BDWR メーカー: Texas Instruments。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Texas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ 生産中Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 生産中仕様比較
| パラメータ | UCC21550ADWR | UCC21550BDWR |
|---|---|---|
| ブランド | Texas Instruments | Texas Instruments |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.19 | $0.88 |
| Number of Channels | 2 (dual) | — |
| Configuration | Dual low-side, dual high-side, or half-bridge | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Reinforced, capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI | > 125 V/ns | — |
| Max VDD Output Supply | 25 V | — |
| UVLO Threshold Option | 5 V | — |
| Dead Time | Programmable | — |
| Disable Function | Yes (DISABLE pin) | Yes |
| Driven Devices | Power MOSFET, SiC, GaN, IGBT | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Junction Temperature Range | -40C to +150C | -40 C to +150 C |
| パッケージ | 16-SOIC (DW) | 16-SOIC (DW) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | [DATA_NEEDED: RoHS status] |
| 出力構成 | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |