2EP130RXTMA1 - Full-Bridge Transformer Driver for SiC/IGBT | Infineon
Référence : 2EP130RXTMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.1 | $210,00 |
| 500 | $1.75 | $875,00 |
| 1 000 | $1.45 | $1 450,00 |
| 3 000 | $1.2 | $3 600,00 |
2EP130RXTMA1 Présentation
A transformer driver is a specialized power-management IC that energizes a step-up transformer to produce an isolated DC rail, eliminating the need for opto-couplers or bootstrap circuits in gate-drive bias networks. The 2EP130RXTMA1 belongs to the gate-driver supply sub-category within the broader PMIC family, sitting hierarchically under PMIC > power management IC > semiconductor. It is specifically engineered for high-side gate drive biasing where galvanic isolation is mandated for safety and dv/dt noise immunity.
Key features include adjustable duty cycle from 10 % to 50 %, 5 W typical output power into the transformer, soft-start for inrush control, under-voltage lockout (UVLO), short-circuit protection, over-current protection, and over-temperature shutdown. The PG-TSSOP-8 package with exposed thermal pad keeps junction rise modest even at 4.5 V operation, allowing continuous 5 W transfer without external heatsinking.
The architecture is a true full-bridge (H-bridge) topology rather than a half-bridge push-pull, which doubles the peak primary voltage swing and enables smaller transformers or higher output power at the same frequency. Internal MOSFETs are synchronized to prevent cross-conduction, and dead-time control protects against shoot-through. According to the Infineon datasheet, the device supports external clock synchronization for paralleled or noise-critical applications.
Typical applications include isolated gate-drive supplies for high-voltage IGBT modules in industrial motor drives, SiC MOSFET gate bias in EV traction inverters, photovoltaic string inverters, and isolated auxiliary supplies for telecom and server power-conversion stages. When compared with a discrete charge-pump approach, the 2EP130RXTMA1 delivers higher efficiency and lower EMI in the same PCB area.
When designing with this part, the transformer turns ratio must be matched to the desired isolated output voltage, and primary inductance should be selected so that magnetizing current stays below 1 A peak. The exposed pad must be soldered to a copper pour of at least 50 mm² to meet thermal ratings under continuous 5 W operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour 2EP130RXTMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec 2EP130RXTMA1 (même facteur de forme et même empreinte) — différant par Package, Product Type, Topology, Number of Outputs, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
2EP100RXTMA1
✅ Remplacement direct✓ En stock
$0.55 / unité
Voir la fiche technique →2EP150RXTMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
2EP1xxR series
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
2EP130RXTMA1 Valeurs maximales et caractéristiques électriques
| Part Number | 2EP130RXTMA1 |
| Manufacturer | Infineon Technologies |
| Product Type | Full-bridge transformer driver PMIC |
| Topologie | Full-bridge (H-bridge), 2 outputs |
| Supply Voltage Range | 4.5 V to 20 V |
| Output Power (typical) | 5 W |
| Switching Frequency Range | 50 kHz to 695 kHz |
| Duty Cycle Range | 10 % to 50 % |
| Nombre de sorties | 2 (push-pull complementary) |
| Boîtier | PG-TSSOP-8 with exposed pad |
| Nombre de broches | 8 |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -40 C to +125 C |
| Démarrage progressif | Yes |
| Under-Voltage Lockout (UVLO) | Yes |
| Short-Circuit Protection | Yes |
| Over-Current Protection | Yes |
| Over-Temperature Protection | Yes |
| Statut RoHS | Compliant |
Configuration des broches de 2EP130RXTMA1
| Broche 1 | OUTA — Bridge output A to transformer primary |
| Broche 2 | GND — Signal ground |
| Broche 3 | VCC — Supply voltage input, 4.5 V to 20 V |
| Broche 4 | OUTB — Bridge output B to transformer primary |
| Broche 5 | SYNC — External synchronization / clock input |
| Broche 6 | EN — Enable input (active high) |
| Broche 7 | RT — Timing resistor for oscillator programming |
| Broche 8 | PGND — Power ground / exposed thermal pad |
Applications typiques
2EP130RXTMA1 convient pour 6 applications: Isolated Gate-Drive Supply for IGBT Modules, SiC MOSFET Gate Bias in EV Traction Inverters, Photovoltaic String Inverter Auxiliary Supply, Industrial Servo Drive High-Side Bias, Telecom and Server Isolated Power Stage, Isolated IGBT Driver Bias for Welding Inverters.
Isolated Gate-Drive Supply for IGBT Modules
The 2EP130RXTMA1 generates a fully isolated +15 V / -8 V bias rail for high-side IGBT gate drivers in industrial motor drives. Its full-bridge topology produces a peak primary voltage of 2 × VCC, doubling the energy transferred per cycle versus a half-bridge driver. With 5 W output and 695 kHz max switching frequency, it comfortably drives a single 600 V/1200 V IGBT half-bridge gate driver through a small 1:1 gate-drive transformer. According to the Infineon datasheet, the integrated soft-start limits inrush magnetizing current and prevents transformer saturation on power-up, which is critical for IGBT modules that draw microfarads of gate charge.
Recommandé
SiC MOSFET Gate Bias in EV Traction Inverters
The 2EP130RXTMA1 is a strong fit for SiC MOSFET gate-drive bias in 800 V EV traction inverters where +18 V / -3 V isolated rails are required. Its 4.5 V to 20 V supply range accepts the 12 V low-voltage bus directly, and the 5 W output capability easily services a 1200 V SiC half-bridge module. The exposed-pad PG-TSSOP-8 package dissipates full-bridge switching loss on a small copper pour, keeping the junction temperature below 125 °C even at ambient 85 °C automotive under-hood environments.
Recommandé
Photovoltaic String Inverter Auxiliary Supply
The 2EP130RXTMA1 provides an isolated auxiliary rail for photovoltaic string-inverter gate-driver and housekeeping sections. Its 4.5 V to 20 V input accepts a 12 V or 24 V auxiliary bus, and the 5 W output powers a SiC or IGBT gate driver plus a small isolated logic interface. According to the Infineon datasheet, the integrated UVLO and short-circuit protection prevent transformer-saturation damage when the auxiliary rail sags during PV panel transient events. The exposed thermal pad simplifies PCB layout in IP66 outdoor inverter enclosures where ambient temperatures reach 85 °C.
Recommandé
Industrial Servo Drive High-Side Bias
The 2EP130RXTMA1 delivers a fully isolated +15 V rail for industrial servo-drive high-side gate drivers, eliminating optocoupler-based bias networks. Its adjustable duty cycle (10 % to 50 %) lets the designer trade off transformer voltage swing against RMS current, and the 50 kHz to 695 kHz switching range accommodates compact 1:1 gate-drive transformers under 2 cm³ in volume. Compared with discrete bootstrap solutions, the 2EP130RXTMA1 holds output regulation across 100 % duty-cycle events that defeat a bootstrap capacitor, which is critical for sustained low-speed servo operation.
Recommandé
Telecom and Server Isolated Power Stage
The 2EP130RXTMA1 is used in -48 V telecom and 54 V server isolated DC-DC converters to provide an isolated bias rail for the primary-side gate driver. The 4.5 V to 20 V supply is derived from a small auxiliary winding or local housekeeping supply, and the 5 W output powers the primary-side controller plus housekeeping functions. According to Infineon, the external SYNC input allows synchronization to the main converter's switching frequency, eliminating beat-frequency EMI in dense server power shelves.
Recommandé
Isolated IGBT Driver Bias for Welding Inverters
The 2EP130RXTMA1 powers the isolated gate-drive bias rails for IGBT modules in industrial welding inverters, where 600 V to 1200 V IGBT half-bridges switch at tens of kHz. Its full-bridge topology pushes 2× VCC across the transformer primary, enabling a 1:1:1 turns ratio to produce a clean +15 V / -8 V bipolar isolated rail without exotic winding construction. The integrated over-current and short-circuit protection limit transformer saturation current during the harsh short-circuit events typical of welding inverter outputs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour 2EP130RXTMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | 2EP100RXTMA1 | 2EP150RXTMA1 | 2EP1xxR series |
|---|---|---|---|---|
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Topology | Full-bridge (H-bridge) | Full-bridge | Full-bridge | Full-bridge |
| Output Power (typical) | 5 W | 3 W | 7 W | 3-7 W (variant dependent) |
| Supply Voltage Range | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Switching Frequency Range | 50 kHz to 695 kHz | 50 kHz to 500 kHz | 50 kHz to 695 kHz | 50 kHz to 695 kHz |
| Soft-Start | Yes | Yes | Yes | Yes |
| Duty Cycle Range | 10 % to 50 % | 10 % to 50 % | 10 % to 50 % | 10 % to 50 % |
Principaux différenciateurs
- True full-bridge topology doubles primary voltage swing (vs 2EP100RXTMA1)
- Highest power in the 2EP1xxR PG-TSSOP-8 family (vs 2EP100RXTMA1)
- Wide switching frequency range supports compact transformers (vs Discrete charge-pump bootstrap)
Notes de conception
Estimated: at 5 W continuous output, full-bridge driver dissipation in the PG-TSSOP-8 exposed-pad package is typically 0.3 W to 0.5 W (90 % typical efficiency). With a theta_JA of approximately 40 C/W on a 50 mm² copper pour, junction temperature rise is 12-20 °C above ambient, well within the 125 °C rating. For continuous operation at 85 °C ambient, the exposed pad must be soldered to a copper pour of at least 50 mm² on the top layer; insufficient copper will cause thermal shutdown.
Keep the gate-drive transformer within 10 mm of the OUTA/OUTB pins to minimize loop inductance and ringing. Use a star-ground connection tying PGND (exposed pad) to the local VCC decoupling capacitor ground before joining the system ground. Route VCC and PGND traces on adjacent layers with at least 0.5 mm width to handle the 1 A peak primary current. Place the RT resistor close to pin 7 to prevent oscillator pickup.
Do not exceed 20 V VCC - the integrated MOSFETs are 25 V parts and avalanche during transients. Ensure the gate-drive transformer turns ratio is matched so that VCC × duty × turns ratio does not saturate the core; at 50 % duty and 695 kHz, primary inductance must keep magnetizing current below the over-current threshold. The SYNC pin should be left grounded or driven by a clean 50 % duty clock - noisy clocks will inject audible hum into the isolated output rail.
Informations de conformité
RoHS and lead-free status per distributor listings (DigiKey, LCSC). AEC-Q100 not stated in available data; halogen-free status not explicitly stated.
