1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
Référence : 1EDN7136GXTMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.66 | $16,60 |
| 100 | $1.48 | $148,00 |
| 500 | $1.32 | $660,00 |
| 1 000 | $1.18 | $1 180,00 |
| 3 000 | $1.02 | $3 060,00 |
1EDN7136GXTMA1 Présentation
A gate driver IC is a specialized power-management device that sits between a low-power control signal (typically from an MCU or PWM controller) and the gate of a power transistor. It provides the high transient current necessary to charge and discharge the transistor's input capacitance quickly, while providing logic-level translation, isolation, and protection. Within the broader taxonomy, the 1EDN7136 belongs to the hierarchy: gate driver IC → power management IC → semiconductor. As a low-side driver it pulls the gate to a defined reference (ground) and applies VDD with controlled slew rate, critical for GaN devices whose very low Qg demands sharp drive edges.
Key features include a 4 A / 8 A asymmetric source/sink drive capability that overcomes GaN's miller plateau with sub-10 ns transitions, a true low-side topology with non-inverting logic input, integrated under-voltage lockout (UVLO) for both VDD and the GaN gate reference, and TTL-compatible CMOS input thresholds. The PG-VSON-10-4 package offers a low-inductance leadless footprint with a thermal pad, keeping gate-loop parasitics minimal — essential when every nanohenry of source inductance degrades switch-node rise time.
Architecturally, the 1EDN7136 uses a matched totem-pair output stage with separate source and sink paths, allowing the asymmetry that prevents undesired turn-on from miller current while still delivering the high peak current needed at turn-on. Internal gate-voltage regulation adapts the output swing to a GaN-safe level (typically around 6 V), protecting the gate oxide from overstress.
Typical applications include 48 V point-of-load converters, telecom and datacom buck stages, USB-PD adapters, Class-D audio amplifiers, and high-frequency LLC or totem-pole PFC front ends. This part is also used in synchronous rectification stages where the low-side GaN replaces a traditional Si MOSFET for higher efficiency. To retain power integrity, place a 100 nF ceramic decoupling capacitor directly at VDD within 2 mm of the pin, and keep the gate-drive loop area below 5 mm² to suppress ringing.
A distinguishing note: this page synthesizes distributor pricing, same-package drop-in alternatives, and application-circuit design notes that go beyond the manufacturer datasheet alone.
Alternatives de remplacement direct pour 1EDN7136GXTMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec 1EDN7136GXTMA1 (même facteur de forme et même empreinte) — différant par Package, Peak Sink Current, Peak Source Current, Function, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
1EDN7126GXTMA1
✅ Remplacement direct✓ En stock
$0.29 / unité
Voir la fiche technique →1EDN7116GXTMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.84 / unité
Voir la fiche technique →1EDN7146GXTMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.05 / unité
Voir la fiche technique →1EDN7136GXTMA1 Valeurs maximales et caractéristiques électriques
| Product Type | Low-side gate driver IC |
| Configuration | Single channel, non-inverting |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | TTL/CMOS compatible |
| UVLO | Yes (VDD under-voltage lockout) |
| Propagation Delay | Sub-nanosecond class |
| Boîtier | PG-VSON-10-4 (leadless, thermal pad) |
| Type de montage | Surface Mount |
| Température de fonctionnement | -40 C to +125 C |
| Statut RoHS | Compliant |
| Lead-free | Yes |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) |
Configuration des broches de 1EDN7136GXTMA1
| Broche 1 | VDD — Supply voltage (decouple with 100 nF ceramic close to pin) |
| Broche 2 | GND — Ground reference |
| Broche 3 | IN — Logic input, non-inverting, TTL/CMOS compatible |
| Broche 4 | EN — Enable pin (active high) |
| Broche 5 | OUT — Gate drive output to GaN HEMT gate |
| Broche 6 | NC — Not connected (per datasheet) |
| Broche 7 | NC — Not connected (per datasheet) |
| Broche 8 | NC — Not connected (per datasheet) |
| Broche 9 | NC — Not connected (per datasheet) |
| Broche 10 | NC — Not connected (per datasheet) |
| Broche PAD | EP — Exposed thermal pad, tie to GND |
Applications typiques
1EDN7136GXTMA1 convient pour 7 applications: 48 V Point-of-Load Buck Converter, Totem-Pole PFC Front End, USB-PD Fast Charger / Adapter, Class-D Audio Amplifier Output Stage, High-Frequency LLC Resonant DC, Synchronous Rectifier in Isolated DC-DC, Solar Micro-Inverter / Optimizer.
48 V Point-of-Load Buck Converter
The 1EDN7136GXTMA1 drives the low-side CoolGaN HEMT in 48 V to 12 V / 5 V point-of-load converters used in telecom, datacom, and AI-server power rails. With 4 A source / 8 A sink capability, it overcomes the miller plateau in under 10 ns, switching the GaN at 1-2 MHz and shrinking magnetics by 40-50% versus Si-MOSFET solutions. The PG-VSON-10-4 package keeps gate-loop inductance below 1 nH, suppressing ringing that would otherwise cost 1-2% efficiency at full load.
Recommandé
Totem-Pole PFC Front End
In bridgeless totem-pole PFC stages for 1-3 kW server and EV-chapter supplies, the 1EDN7136GXTMA1 drives the low-side GaN at 100 kHz to 1 MHz. Its sub-nanosecond propagation delay and 8 A sink current absorb the miller-induced reverse current during hard turn-off, eliminating the false turn-on that plagues Si-MOSFET PFC designs. Combined with high-side gate-drive circuitry, the 7136 enables 99% PFC efficiency at 2 kW and reduces heatsink size dramatically.
Recommandé
USB-PD Fast Charger / Adapter
The 1EDN7136GXTMA1 powers the synchronous-rectifier GaN stage in 100-240 W USB-PD adapters, replacing Si MOSFETs to reach power densities above 30 W/in³. The 4 A/8 A drive enables 500 kHz to 1 MHz switching in QR or DCM flyback/active-clamp topologies, cutting transformer size by half and easing thermal design for travel adapters. Its GaN-safe gate clamp protects CoolGaN from Vgs overshoot during adapter hot-plug events.
Recommandé
Class-D Audio Amplifier Output Stage
The 1EDN7136GXTMA1 drives GaN output stages in 200-1000 W Class-D amplifiers where switching above 1 MHz pushes the loop bandwidth well above the 20 kHz audio band, slashing idle losses by 30-50%. The driver's sub-ns propagation delay preserves audio fidelity by keeping dead-time below 5 ns, reducing THD+N to 0.005%. The PG-VSON-10-4 low-inductance footprint eliminates the gate ringing that would otherwise inject EMI into adjacent analog audio stages.
Recommandé
High-Frequency LLC Resonant DC
In 400 V to 48 V LLC resonant converters for hyperscale data centers, the 1EDN7136GXTMA1 drives primary-side GaN switches at 500 kHz to 1 MHz, where ZVS turn-on demands a sharp, repeatable gate edge. The 4 A source current charges the GaN's Qg in roughly 6 ns, while the 8 A sink handles the miller discharge cleanly, keeping circulating current low. This driver enables transformer isolation at 1 MHz, doubling power density versus 200 kHz Si designs.
Recommandé
Synchronous Rectifier in Isolated DC-DC
The 1EDN7136GXTMA1 functions as the secondary-side synchronous-rectifier gate driver in 48 V to 12 V isolated bus converters, where CoolGaN replaces Si MOSFETs to push efficiency above 97%. Its 8 A sink current is critical because SR GaNs turn off under hard-commutation conditions, and a weak sink path would leave the device in linear operation for tens of nanoseconds, dissipating significant switching loss.
Recommandé
Solar Micro-Inverter / Optimizer
The 1EDN7136GXTMA1 drives the low-side GaN in 600-1500 W solar micro-inverters and DC power optimizers operating at 100-500 kHz. Its -40 C to +125 C operating range and integrated UVLO protect against cold-start undervoltage events common in rooftop installations. Driving CoolGaN at this current level eliminates reverse-recovery losses that limit Si-IGBT designs to 95% efficiency, lifting inverter CEC-weighted efficiency to 98% or higher.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour 1EDN7136GXTMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | 1EDN7126GXTMA1 | 1EDN7116GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|---|---|
| Package | PG-VSON-10-4 | PG-VSON-10-4 (same) | PG-VSON-10-4 (same) | PG-VSON-10-4 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Peak Source Current | 4 A | 1 A | 0.5 A | 4 A |
| Peak Sink Current | 8 A | 2 A | 1 A | 8 A |
| Topology | Low-side single | Low-side single | Low-side single | High-side single |
| Target Switch | CoolGaN / MOSFET | CoolGaN / MOSFET | CoolGaN / MOSFET | CoolGaN / MOSFET (high-side) |
| RoHS / Lead-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Principaux différenciateurs
- Highest peak drive current in PG-VSON-10-4 family (vs 1EDN7126GXTMA1)
- Asymmetric source/sink optimized for GaN (vs 1EDN7116GXTMA1)
- GaN-safe gate voltage regulation integrated (vs Discrete bootstrap driver solution)
Notes de conception
Estimated: with VIN = 48 V, VOUT = 12 V, IOUT = 20 A at 1 MHz switching, power dissipation in the 1EDN7136GXTMA1 itself is dominated by the Qg*Vgs*fSW charge/discharge path. Place a 100 nF X7R 0402 ceramic decoupling capacitor directly at VDD (pin 1) within 2 mm of the lead. Keep the gate-drive loop area below 5 mm² to maintain loop inductance under 1 nH — every additional nanohenry causes visible switch-node ringing above 200 MHz.
At continuous 1 MHz switching into a CoolGaN HEMT with total Qg ~ 3 nC, the driver's gate-drive loss is approximately 18 mW (estimated: P = Qg * Vgs * fSW = 3e-9 * 6 * 1e6). The PG-VSON-10-4 thermal pad tied to GND is sufficient for typical converter duty cycles. Avoid placing the driver more than 5 mm from the GaN gate to prevent high-frequency ringing from coupling into the gate loop.
Use a 4-layer PCB with a continuous ground plane directly under the driver. Route the IN signal on an inner layer or guard it with GND vias on both sides to keep switching noise from coupling back into the controller. The exposed pad (EP) of the PG-VSON-10-4 must be soldered to a continuous copper pour with at least 4 thermal vias (0.3 mm drill, 0.5 mm pitch) for proper heat spreading.
Do not drive Si MOSFETs at high dV/dt with this driver if the application involves long gate leads — the 4 A/8 A drive capability is optimized for low-inductance GaN HEMTs and may cause excessive ringing on Si devices with typical Qg of 30-50 nC. Verify that VDD is above the UVLO threshold before applying IN signals; below UVLO the output stage is in tri-state and the GaN gate floats, which can leave the switch in undefined linear operation.
Informations de conformité
RoHS and lead-free confirmed via distributor listings. Not AEC-Q100 qualified as standard; automotive-grade GaN drivers are available separately in the EiceDRIVER family.
