2EP130RXTMA1 - Full-Bridge Transformer Driver for SiC/IGBT | Infineon
MPN: 2EP130RXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.75 | $875.00 |
| 1,000 | $1.45 | $1,450.00 |
| 3,000 | $1.2 | $3,600.00 |
Drop-in alternatives for 2EP130RXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EP100RXTMA1
β Drop-Inπ Reference alternative (not in catalog)
2EP150RXTMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
2EP1xxR series
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
2EP130RXTMA1 Maximum Ratings & Electrical Characteristics
| Part Number | 2EP130RXTMA1 |
| Manufacturer | Infineon Technologies |
| Product Type | Full-bridge transformer driver PMIC |
| Topology | Full-bridge (H-bridge), 2 outputs |
| Supply Voltage Range | 4.5 V to 20 V |
| Output Power (typical) | 5 W |
| Switching Frequency Range | 50 kHz to 695 kHz |
| Duty Cycle Range | 10 % to 50 % |
| Number of Outputs | 2 (push-pull complementary) |
| Package | PG-TSSOP-8 with exposed pad |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 C to +125 C |
| Soft-Start | Yes |
| Under-Voltage Lockout (UVLO) | Yes |
| Short-Circuit Protection | Yes |
| Over-Current Protection | Yes |
| Over-Temperature Protection | Yes |
| RoHS Status | Compliant |
2EP130RXTMA1 Pin Configuration
| Pin 1 | OUTA β Bridge output A to transformer primary |
| Pin 2 | GND β Signal ground |
| Pin 3 | VCC β Supply voltage input, 4.5 V to 20 V |
| Pin 4 | OUTB β Bridge output B to transformer primary |
| Pin 5 | SYNC β External synchronization / clock input |
| Pin 6 | EN β Enable input (active high) |
| Pin 7 | RT β Timing resistor for oscillator programming |
| Pin 8 | PGND β Power ground / exposed thermal pad |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2EP130RXTMA1 is suitable for 6 applications: Isolated Gate-Drive Supply for IGBT Modules, SiC MOSFET Gate Bias in EV Traction Inverters, Photovoltaic String Inverter Auxiliary Supply, Industrial Servo Drive High-Side Bias, Telecom and Server Isolated Power Stage, Isolated IGBT Driver Bias for Welding Inverters.
Isolated Gate-Drive Supply for IGBT Modules
The 2EP130RXTMA1 generates a fully isolated +15 V / -8 V bias rail for high-side IGBT gate drivers in industrial motor drives. Its full-bridge topology produces a peak primary voltage of 2 Γ VCC, doubling the energy transferred per cycle versus a half-bridge driver. With 5 W output and 695 kHz max switching frequency, it comfortably drives a single 600 V/1200 V IGBT half-bridge gate driver through a small 1:1 gate-drive transformer. According to the Infineon datasheet, the integrated soft-start limits inrush magnetizing current and prevents transformer saturation on power-up, which is critical for IGBT modules that draw microfarads of gate charge.
Recommended
SiC MOSFET Gate Bias in EV Traction Inverters
The 2EP130RXTMA1 is a strong fit for SiC MOSFET gate-drive bias in 800 V EV traction inverters where +18 V / -3 V isolated rails are required. Its 4.5 V to 20 V supply range accepts the 12 V low-voltage bus directly, and the 5 W output capability easily services a 1200 V SiC half-bridge module. The exposed-pad PG-TSSOP-8 package dissipates full-bridge switching loss on a small copper pour, keeping the junction temperature below 125 Β°C even at ambient 85 Β°C automotive under-hood environments.
Recommended
Photovoltaic String Inverter Auxiliary Supply
The 2EP130RXTMA1 provides an isolated auxiliary rail for photovoltaic string-inverter gate-driver and housekeeping sections. Its 4.5 V to 20 V input accepts a 12 V or 24 V auxiliary bus, and the 5 W output powers a SiC or IGBT gate driver plus a small isolated logic interface. According to the Infineon datasheet, the integrated UVLO and short-circuit protection prevent transformer-saturation damage when the auxiliary rail sags during PV panel transient events. The exposed thermal pad simplifies PCB layout in IP66 outdoor inverter enclosures where ambient temperatures reach 85 Β°C.
Recommended
Industrial Servo Drive High-Side Bias
The 2EP130RXTMA1 delivers a fully isolated +15 V rail for industrial servo-drive high-side gate drivers, eliminating optocoupler-based bias networks. Its adjustable duty cycle (10 % to 50 %) lets the designer trade off transformer voltage swing against RMS current, and the 50 kHz to 695 kHz switching range accommodates compact 1:1 gate-drive transformers under 2 cmΒ³ in volume. Compared with discrete bootstrap solutions, the 2EP130RXTMA1 holds output regulation across 100 % duty-cycle events that defeat a bootstrap capacitor, which is critical for sustained low-speed servo operation.
Recommended
Telecom and Server Isolated Power Stage
The 2EP130RXTMA1 is used in -48 V telecom and 54 V server isolated DC-DC converters to provide an isolated bias rail for the primary-side gate driver. The 4.5 V to 20 V supply is derived from a small auxiliary winding or local housekeeping supply, and the 5 W output powers the primary-side controller plus housekeeping functions. According to Infineon, the external SYNC input allows synchronization to the main converter's switching frequency, eliminating beat-frequency EMI in dense server power shelves.
Recommended
Isolated IGBT Driver Bias for Welding Inverters
The 2EP130RXTMA1 powers the isolated gate-drive bias rails for IGBT modules in industrial welding inverters, where 600 V to 1200 V IGBT half-bridges switch at tens of kHz. Its full-bridge topology pushes 2Γ VCC across the transformer primary, enabling a 1:1:1 turns ratio to produce a clean +15 V / -8 V bipolar isolated rail without exotic winding construction. The integrated over-current and short-circuit protection limit transformer saturation current during the harsh short-circuit events typical of welding inverter outputs.
Recommended
Recommended Products Summary
Engineering reference data for 2EP130RXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EP100RXTMA1 | 2EP150RXTMA1 | 2EP1xxR series |
|---|---|---|---|---|
| Package | PG-TSSOP-8 | PG-TSSOP-8 - same | PG-TSSOP-8 - same | PG-TSSOP-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Topology | Full-bridge (H-bridge) | Full-bridge | Full-bridge | Full-bridge |
| Output Power (typical) | 5 W | 3 W | 7 W | 3-7 W (variant dependent) |
| Supply Voltage Range | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V |
| Switching Frequency Range | 50 kHz to 695 kHz | 50 kHz to 500 kHz | 50 kHz to 695 kHz | 50 kHz to 695 kHz |
| Soft-Start | Yes | Yes | Yes | Yes |
| Duty Cycle Range | 10 % to 50 % | 10 % to 50 % | 10 % to 50 % | 10 % to 50 % |
Key Differentiators
- True full-bridge topology doubles primary voltage swing (vs 2EP100RXTMA1)
- Highest power in the 2EP1xxR PG-TSSOP-8 family (vs 2EP100RXTMA1)
- Wide switching frequency range supports compact transformers (vs Discrete charge-pump bootstrap)
Design Notes
Estimated: at 5 W continuous output, full-bridge driver dissipation in the PG-TSSOP-8 exposed-pad package is typically 0.3 W to 0.5 W (90 % typical efficiency). With a theta_JA of approximately 40 C/W on a 50 mmΒ² copper pour, junction temperature rise is 12-20 Β°C above ambient, well within the 125 Β°C rating. For continuous operation at 85 Β°C ambient, the exposed pad must be soldered to a copper pour of at least 50 mmΒ² on the top layer; insufficient copper will cause thermal shutdown.
Keep the gate-drive transformer within 10 mm of the OUTA/OUTB pins to minimize loop inductance and ringing. Use a star-ground connection tying PGND (exposed pad) to the local VCC decoupling capacitor ground before joining the system ground. Route VCC and PGND traces on adjacent layers with at least 0.5 mm width to handle the 1 A peak primary current. Place the RT resistor close to pin 7 to prevent oscillator pickup.
Do not exceed 20 V VCC - the integrated MOSFETs are 25 V parts and avalanche during transients. Ensure the gate-drive transformer turns ratio is matched so that VCC Γ duty Γ turns ratio does not saturate the core; at 50 % duty and 695 kHz, primary inductance must keep magnetizing current below the over-current threshold. The SYNC pin should be left grounded or driven by a clean 50 % duty clock - noisy clocks will inject audible hum into the isolated output rail.
Compliance Information
RoHS and lead-free status per distributor listings (DigiKey, LCSC). AEC-Q100 not stated in available data; halogen-free status not explicitly stated.
