STB21N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
Référence : STB21N65M5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.82 | $1 820,00 |
STB21N65M5 Présentation
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and many other applications. They are preferred for their fast switching speeds, high input impedance, and low drive power requirements.
Key features of the STB21N65M5 include a low gate charge (Qg) of 45 nC, which enables fast switching and reduces switching losses. The device also has a low thermal resistance junction-to-case of 1.1 °C/W, allowing efficient heat dissipation. The MDmesh M5 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for high-frequency applications. The device is RoHS compliant and halogen-free, meeting modern environmental standards.
The STB21N65M5 utilizes ST's MDmesh M5 vertical structure, which reduces on-resistance and gate charge simultaneously, improving efficiency in power conversion. The device is avalanche-rated, with an avalanche energy of 400 mJ, ensuring robustness in harsh switching conditions. The integrated body diode has a fast reverse recovery time, reducing losses in bridge topologies.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The 650V rating makes it suitable for universal input (85-265V AC) power supplies, where the device must withstand high voltage transients. The low on-resistance minimizes conduction losses, improving overall system efficiency.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Adequate heat sinking is required for high-current operation, and a snubber circuit may be needed to limit voltage spikes during switching.
Alternatives de remplacement direct pour STB21N65M5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STB21N65M5-2
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
STB21N65M5-3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IPP60R099CP
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
FCP17N60N
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
STB21N65M5 Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 17 A |
| On-Resistance (RDS(on)) typical | 0.19 ohm |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Charge (Qg) | 45 nC |
| Avalanche Energy (EAS) | 400 mJ |
| Thermal Resistance Junction-to-Case (RthJC) | 1.1 °C/W |
| Boîtier | D2PAK (TO-263) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
Configuration des broches de STB21N65M5
| Broche 1 | Gate — Gate terminal for controlling the MOSFET |
| Broche 2 | Drain — Drain terminal, connected to the tab |
| Broche 3 | Source — Source terminal |
Zone de fonctionnement sûr
Applications typiques
STB21N65M5 convient pour 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Motor Drives, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STB21N65M5 is ideal for SMPS due to its 650V breakdown voltage and low on-resistance of 0.19 ohm. In a typical flyback converter, the MOSFET switches at high frequency, and the low gate charge (45 nC) reduces switching losses. The low RDS(on) minimizes conduction losses, improving overall efficiency. The D2PAK package allows efficient heat dissipation, essential for continuous operation. Compared to lower-voltage MOSFETs, the 650V rating provides ample margin for voltage spikes in universal input (85-265V AC) applications. Designers should ensure proper gate drive (10V) and snubber circuits to limit voltage transients.
Recommandé
Power Factor Correction (PFC)
In PFC circuits, the STB21N65M5 operates in boost converter topology to shape the input current waveform. Its 650V rating handles the high output voltage (typically 400V) with margin. The low gate charge enables high-frequency operation, reducing the size of magnetic components. The avalanche energy rating of 400 mJ ensures robustness during transient conditions. The low RDS(on) minimizes conduction losses, improving efficiency. Designers should use a dedicated PFC controller and ensure proper heat sinking for high-power applications.
Recommandé
LED Lighting Drivers
The STB21N65M5 is suitable for LED drivers, particularly in offline applications. Its 650V rating allows direct connection to rectified AC mains. The low on-resistance reduces power dissipation, improving driver efficiency. The fast switching capability enables compact transformer designs. The D2PAK package is suitable for surface-mount assembly, reducing manufacturing cost. Designers should implement proper current sensing and thermal management to ensure reliable operation.
Recommandé
Solar Inverters
In solar inverters, the STB21N65M5 is used in DC-DC boost stages and inverter bridges. Its 650V rating is suitable for the high DC bus voltage (up to 600V). The low RDS(on) minimizes conduction losses, improving conversion efficiency. The avalanche rating ensures robustness during fault conditions. The fast body diode reduces reverse recovery losses in bridge topologies. Designers should ensure proper gate drive isolation and thermal management for outdoor operation.
Recommandé
Motor Drives
The STB21N65M5 can be used in motor drive inverters for industrial and consumer applications. Its 650V rating handles the DC bus voltage in three-phase inverters. The low gate charge enables high-frequency PWM, reducing motor noise. The low RDS(on) minimizes conduction losses, improving efficiency. The D2PAK package allows compact designs. Designers should use proper gate drivers and consider dead-time to prevent shoot-through.
Recommandé
Battery Chargers
In battery chargers, the STB21N65M5 is used in the power stage to convert AC to DC. Its 650V rating is suitable for universal input. The low RDS(on) reduces losses, improving charging efficiency. The fast switching enables compact designs. The avalanche rating ensures reliability during load transients. Designers should implement proper current limiting and thermal protection.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STB21N65M5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STB21N65M5-1 | STB21N65M5-2 | IPP60R099CP | FCP17N60N |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Breakdown Voltage | 650 V | 650 V | 650 V | 600 V | 600 V |
| Continuous Drain Current (25°C) | 17 A | 17 A | 17 A | 17 A | 17 A |
| On-Resistance (RDS(on)) | 0.19 ohm | 0.19 ohm | 0.19 ohm | 0.099 ohm | 0.17 ohm |
| Gate Charge (Qg) | 45 nC | 45 nC | 45 nC | 45 nC | 40 nC |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- 650V breakdown voltage with low RDS(on) of 0.19 ohm (vs IPP60R099CP)
- Avalanche energy rating of 400 mJ (vs FCP17N60N)
- MDmesh M5 technology for improved figure of merit (vs IPP60R099CP)
Notes de conception
The STB21N65M5 has a low on-resistance of 0.19 ohm, which minimizes conduction losses. For a 17A load, the conduction loss is approximately 55W (I^2 * R). Ensure adequate heat sinking to keep the junction temperature within limits. The thermal resistance junction-to-case is 1.1 °C/W, so a heatsink with low thermal resistance is essential for high-current operation.
For the D2PAK package, ensure the PCB has a large copper area for the drain tab to dissipate heat. Use multiple vias to connect the tab to the ground plane. Place the gate drive components close to the gate pin to minimize parasitic inductance. Follow the layout guidelines in the ST application notes for high-frequency switching.
Do not exceed the maximum gate-source voltage of ±25V, as this can cause oxide breakdown. Use a gate driver that provides a clean 10V drive signal. Also, consider adding a snubber circuit across the drain-source to limit voltage spikes during switching, especially in inductive load applications. The avalanche rating of 400 mJ provides some margin, but it is not a substitute for proper snubber design.
Informations de conformité
RoHS compliant and halogen-free per STMicroelectronics datasheet. AEC-Q100 not applicable for this discrete MOSFET.