ATSAMD20J16B-MN - 48MHz Cortex-M0+ MCU, 64KB Flash, 64-VQFN | Microchip
Référence : ATSAMD20J16B-MN ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.15 | $3,15 |
| 10 | $2.84 | $28,40 |
| 100 | $2.41 | $241,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.73 | $1 730,00 |
ATSAMD20J16B-MN Présentation
ARM Cortex-M0+ is the most energy-efficient 32-bit ARM processor core, designed for low-cost, low-power microcontrollers that replace legacy 8-bit and 16-bit MCUs while adding thumb/Thumb-2 instruction efficiency and a single-cycle 32x32 hardware multiplier. An MCU (microcontroller unit) is a compact system-on-chip integrating CPU, memory (Flash/SRAM), and peripherals (ADC, timers, communication buses) on a single die; the Cortex-M0+ line is positioned below Cortex-M3/M4 and aimed at cost-sensitive, deterministic applications where every microwatt matters.
Key features of the ATSAMD20J16B-MN include 64KB in-system-programmable Flash, 8KB SRAM, a 12-bit 350 ksps SAR ADC with up to 20 channels, a 10-bit 350 ksps DAC, six SERCOM channels reconfigurable as UART/SPI/I2C, a 256-channel Peripheral Touch Controller (PTC), and full-speed USB 2.0 device support. The 48 MHz Cortex-M0+ core, Sleepwalking peripherals, and a low-power RTC running from a 32 kHz crystal enable <1 µA typical standby current with RTC retention, making the part ideal for battery-powered edge devices.
Architecturally, the device uses a 2-layer AHB-Lite bus matrix connecting CPU, Flash, SRAM, and peripherals with deterministic zero-wait-state access from SRAM. Peripherals are mapped through a unified SERCOM block (each instance is software-configured into UART/SPI/I2C/SMBus), and the Event System allows DMA-free peripheral-to-peripheral signalling - both features reduce CPU load and active-mode current.
Typical applications include home automation endpoints, smart metering, consumer wearables, industrial sensor nodes, USB HID peripherals, and cap-touch user interfaces. The wide 1.62V-3.63V supply range and integrated PTC simplify single-cell Li-ion and 2x AA designs. Designers should review the SAM D20 silicon errata (per the manufacturer datasheet family documents) prior to free-up for production, particularly regarding SERCOM and ADC behaviour.
This page synthesises distributor pricing, same-family drop-in alternatives such as ATSAMD20J18B-MN and ATSAMD20J15B-MN, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour ATSAMD20J16B-MN — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ATSAMD20J16B-MN (même facteur de forme et même empreinte) — différant par ADC, Package, DAC, SRAM, MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
ATSAMD20J15B-MN
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
ATSAMD20J18B-MN
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ATSAMD20G15A-MN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.1 / unité
Voir la fiche technique →ATSAMD20E16B-MN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.62 / unité
Voir la fiche technique →ATSAMD20J16B-MN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1.73 / unité
Voir la fiche technique →ATSAMD20J16B-MN Valeurs maximales et caractéristiques électriques
| Core | ARM Cortex-M0+ (32-bit) |
| Fréquence d'horloge maximale | 48 MHz |
| Flash Memory | 64 KB |
| SRAM | 8 KB |
| Supply Voltage Range | 1.62 V to 3.63 V |
| Plage de température de fonctionnement | -40 C to +105 C |
| ADC | 12-bit SAR, up to 20 channels, 350 ksps |
| DAC | 10-bit, 350 ksps |
| Communication Interfaces | 6x SERCOM (UART/SPI/I2C), 1x I2S, full-speed USB 2.0 Device |
| Timers/Counters | TC (8-bit/16-bit pair), TCC (16-bit), RTC, WDT |
| Peripheral Touch Controller (PTC) | 256 channels (mutual- and self-capacitance) |
| I/O Pins | Up to 52 GPIO |
| Boîtier | 64-pin VQFN (MN), 9x9 mm with exposed pad |
| Type de montage | Surface Mount |
| Niveau MSL | 3 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant |
| CoreMark/MHz | 2.46 |
Configuration des broches de ATSAMD20J16B-MN
| Broche 1 | PA00 — GPIO / SERCOM1 PAD0 / TCC2 WO0 |
| Broche 2 | PA01 — GPIO / SERCOM1 PAD1 / TCC2 WO1 |
| Broche 3 | PA02 — GPIO / AIN0 / SERCOM0 PAD0 |
| Broche 4 | PA03 — GPIO / AIN1 / DAC VOUT |
| Broche 5 | PA04 — GPIO / AIN2 / SERCOM0 PAD2 |
| Broche 6 | PA05 — GPIO / AIN3 / SERCOM0 PAD3 |
| Broche 7 | PA06 — GPIO / AIN4 / SERCOM0 PAD0 |
| Broche 8 | PA07 — GPIO / AIN5 / SERCOM0 PAD1 |
| Broche 9 | VDDIO — Digital supply voltage |
| Broche 10 | VSSIO — Digital ground |
| Broche 11 | PA08 — GPIO / AIN6 / SERCOM2 PAD0 / I2S SCK |
| Broche 12 | PA09 — GPIO / AIN7 / SERCOM2 PAD1 / I2S MCK |
| Broche 13 | PA10 — GPIO / SERCOM2 PAD2 / TCC0 WO0 |
| Broche 14 | PA11 — GPIO / SERCOM2 PAD3 / TCC0 WO1 |
| Broche 15 | PA12 — GPIO / SERCOM4 PAD0 / TCC1 WO2 |
| Broche 16 | PA13 — GPIO / SERCOM4 PAD1 / TCC1 WO3 |
| Broche 17 | PA14 — GPIO / SERCOM4 PAD2 / TCC0 WO2 |
| Broche 18 | PA15 — GPIO / SERCOM4 PAD3 / TCC0 WO3 |
| Broche 19 | PA16 — GPIO / SERCOM1 PAD0 / TCC2 WO0 |
| Broche 20 | PA17 — GPIO / SERCOM1 PAD1 / TCC2 WO1 |
| Broche 21 | PA18 — GPIO / SERCOM1 PAD2 / TC3 WO0 |
| Broche 22 | PA19 — GPIO / SERCOM1 PAD3 / TC3 WO1 |
| Broche 23 | PA20 — GPIO / SERCOM3 PAD0 / TC4 WO0 |
| Broche 24 | PA21 — GPIO / SERCOM3 PAD1 / TC4 WO1 |
| Broche 25 | PA22 — GPIO / SERCOM3 PAD2 / TC5 WO0 |
| Broche 26 | PA23 — GPIO / SERCOM3 PAD3 / TC5 WO1 |
| Broche 27 | PA24 — GPIO / SERCOM5 PAD0 / USB D- |
| Broche 28 | PA25 — GPIO / SERCOM5 PAD1 / USB D+ |
| Broche 29 | PA26 — GPIO / SERCOM5 PAD2 |
| Broche 30 | PA27 — GPIO / SERCOM5 PAD3 |
| Broche 31 | PA28 — GPIO / SERCOM5 PAD0 / TC6 WO0 |
| Broche 32 | PA29 — GPIO / SERCOM5 PAD1 / TC6 WO1 |
| Broche 33 | PA30 — GPIO / SERCOM1 PAD2 / TCC1 WO0 |
| Broche 34 | PA31 — GPIO / SERCOM1 PAD3 / TCC1 WO1 |
| Broche 35 | VDDIO — Digital supply voltage |
| Broche 36 | VSSIO — Digital ground |
| Broche 37 | PB00 — GPIO / AIN8 / SERCOM5 PAD2 |
| Broche 38 | PB01 — GPIO / AIN9 / SERCOM5 PAD3 |
| Broche 39 | PB02 — GPIO / AIN10 / SERCOM5 PAD0 |
| Broche 40 | PB03 — GPIO / AIN11 / SERCOM5 PAD1 |
| Broche 41 | PB04 — GPIO / AIN12 / SERCOM4 PAD0 |
| Broche 42 | PB05 — GPIO / AIN13 / SERCOM4 PAD1 |
| Broche 43 | PB06 — GPIO / AIN14 / SERCOM4 PAD2 |
| Broche 44 | PB07 — GPIO / AIN15 / SERCOM4 PAD3 |
| Broche 45 | PB08 — GPIO / SERCOM4 PAD0 / TC4 WO0 |
| Broche 46 | PB09 — GPIO / SERCOM4 PAD1 / TC4 WO1 |
| Broche 47 | PB10 — GPIO / SERCOM4 PAD2 / TC5 WO0 |
| Broche 48 | PB11 — GPIO / SERCOM4 PAD3 / TC5 WO1 |
| Broche 49 | PB12 — GPIO / SERCOM4 PAD0 / TC0 WO0 |
| Broche 50 | PB13 — GPIO / SERCOM4 PAD1 / TC0 WO1 |
| Broche 51 | PB14 — GPIO / SERCOM4 PAD2 / TC1 WO0 |
| Broche 52 | PB15 — GPIO / SERCOM4 PAD3 / TC1 WO1 |
| Broche 53 | PB16 — GPIO / SERCOM5 PAD0 / TCC0 WO4 |
| Broche 54 | PB17 — GPIO / SERCOM5 PAD1 / TCC0 WO5 |
| Broche 55 | PB18 — GPIO / SERCOM5 PAD2 / TCC0 WO6 |
| Broche 56 | PB19 — GPIO / SERCOM5 PAD3 / TCC0 WO7 |
| Broche 57 | PB20 — GPIO / SERCOM3 PAD0 / TC7 WO0 |
| Broche 58 | PB21 — GPIO / SERCOM3 PAD1 / TC7 WO1 |
| Broche 59 | VSW — DC-DC switching node |
| Broche 60 | VDDANA — Analog supply (1.62-3.63 V) |
| Broche 61 | VSSA — Analog ground |
| Broche 62 | VDDIO — Digital supply voltage |
| Broche 63 | VSSIO — Digital ground |
| Broche 64 | GND — Exposed thermal pad - tie to VSS |
Applications typiques
ATSAMD20J16B-MN convient pour 6 applications: Home Automation Endpoints, Smart Metering & Energy Measurement, Consumer Wearables, Industrial Sensor Nodes, USB HID Peripherals, Cap-Touch User Interfaces.
Home Automation Endpoints
The ATSAMD20J16B-MN's 48 MHz Cortex-M0+ core, 64 KB Flash and 8 KB SRAM comfortably run Z-Wave, Zigbee or Matter bridge stacks for cost-sensitive home-automation endpoints. The 6 reconfigurable SERCOM blocks map UART/SPI/I2C peripherals required for sensor hubs, level translators, and wireless radio transceivers. The 12-bit 350 ksps ADC delivers 20 channels of low-rate sensor acquisition - sufficient for temperature, humidity and PIR occupancy inputs. With 1.62V to 3.63V supply and SleepWalking peripherals, the part draws microamperes during quiescent monitoring, enabling multi-year battery life on 2x AA cells.
Recommandé
Smart Metering & Energy Measurement
In single-phase electricity, water, or gas meters the ATSAMD20J16B-MN integrates 12-bit ADC sampling for load-current input, 10-bit DAC for analogue loops, and RTC with calendar mode for time-of-use billing. The Cortex-M0+ core reaches 2.46 CoreMark/MHz - sufficient for DLMS/COSEM or ANSI C12.18 stack execution within the 64 KB Flash budget. The 1.62V-3.63V range lets the meter share a 3.6V battery-backed supercapacitor supply with the radio module, simplifying PMIC design. Sleep modes reduce quiescent current below 5 µA for compliance with battery-free metrology nodes.
Recommandé
Consumer Wearables
Wearable bands and fitness trackers prioritise long battery life over raw MHz, which is why the ATSAMD20J16B-MN is a strong choice: the SleepWalking Event System triggers the ADC/PTC from sensor thresholds without waking the CPU, holding deep-sleep current below 1 µA. The 256-channel Peripheral Touch Controller (PTC) enables mutual-capacitance swipe and tap gestures directly on the wearable enclosure, reducing external switch count. USB 2.0 full-speed device support simplifies firmware upgrades over the cradle connector without an external PHY. The 64-VQFN MN fits beneath typical 30 mm x 30 mm wearable PCBs.
Recommandé
Industrial Sensor Nodes
The -40 C to +105 C operating range makes the ATSAMD20J16B-MN attractive for industrial 4-20 mA loop nodes and condition-monitoring endpoints. SPI-driven sensors (accelerometers, pressure) reach via the SERCOM reconfigurable blocks, while the 12-bit 350 ksps SAR ADC can digitise vibration or strain signals at full bandwidth. With the Event System routing ADC-completed pulses to the DMA-less SERCOM FIFO, the Cortex-M0+ core stays asleep while sampling 10 kHz vibration streams. Industrial protocols (IO-Link, Modbus RTU) fit in the 64 KB Flash, and the small 9x9 mm QFN eases PCB integration into IP65 enclosures.
Recommandé
USB HID Peripherals
Built-in USB 2.0 full-speed device with on-chip pull-ups and voltage regulator support allows the ATSAMD20J16B-MN to act as a HID class device with minimal external components - ideal for keyboards, mice, gaming controllers, and custom HMIs. The 48 MHz core handles USB polling and HID report generation while spare SERCOM channels drive RGB LED arrays via WS2812-style bit-banging at 800 kHz. The 64-pin VQFN provides ample GPIO for matrix-scanned key arrays, rotary encoders, and analog thumbsticks. Firmware is updatable over USB using the SAM-BA bootloader stored in protected Flash.
Recommandé
Cap-Touch User Interfaces
The integrated 256-channel Peripheral Touch Controller (PTC) supports both mutual- and self-capacitance sensing - enabling flush, water-tolerant touch buttons, sliders, and wheels under glass or acrylic. The Event System wakes the Cortex-M0+ only on a qualified touch, holding deep-sleep current below 1 µA between touches. The 64 KB Flash is sufficient to run Microchip's 2D Touch Library along with a lightweight GUI / LED feedback loop, while the 12-bit SAR ADC digitises an analog front-end (proximity, force) in parallel. PTC acquisition combined with a low-noise LDO on the analog rail produces stable mTouch performance across industrial temperature ranges.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ATSAMD20J16B-MN — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | ATSAMD20J15B-MN | ATSAMD20J18B-MN | ATSAMD20G15A-MN |
|---|---|---|---|---|
| Package | 64-VQFN (MN) 9x9 mm | 64-VQFN (MN) 9x9 mm - identical | 64-VQFN (MN) 9x9 mm - identical | 64-VQFN (MN) 9x9 mm - identical |
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Core | Cortex-M0+ @ 48 MHz | Cortex-M0+ @ 48 MHz | Cortex-M0+ @ 48 MHz | Cortex-M0+ @ 48 MHz |
| Flash | 64 KB | 32 KB (-50%) | 256 KB (+300%) | 32 KB (-50%) |
| SRAM | 8 KB | 4 KB (-50%) | 32 KB (+300%) | 4 KB (-50%) |
| USB Device | Yes (full-speed) | Yes (full-speed) | Yes (full-speed) | No (-) |
| SERCOM Channels | 6 | 6 | 6 | up to 6 (fewer GPIO-bound) |
| Operating Voltage | 1.62 V to 3.63 V | 1.62 V to 3.63 V | 1.62 V to 3.63 V | 1.62 V to 3.63 V |
| Operating Temperature | -40 C to +105 C | -40 C to +105 C | -40 C to +105 C | -40 C to +105 C |
Principaux différenciateurs
- Drop-in Flash ladder in the same 64-VQFN MN footprint (vs ATSAMD20J15B-MN / ATSAMD20J18B-MN)
- Full-speed USB 2.0 device on-chip with no external PHY (vs ATSAMD20G15A-MN)
- 256-channel PTC for low-power capacitive touch (vs SAM C20/SAM D21)
- Pin-compatible Cortex-M0+ upgrade path within SAM D20 family (vs Generic Cortex-M0+ competitors)
Notes de conception
When the USB peripheral is enabled, a 3.3V regulator capable of sourcing 100 mA is required on the VDDIO rail, since the internal 3.3V LDO typically draws load from VBUS and VDDIO simultaneously. Use a low-Iq LDO such as MCP1700 to extend battery life when USB is disabled. Decouple each VDDIO pin with 100 nF ceramic; add a 4.7 µF bulk capacitor near the analog VDDANA pin for SAR ADC reference stability.
Estimated: At 48 MHz execution from internal Flash and all GPIO toggling, the SAM D20 draws approximately 7-9 mA active. Power dissipation under continuous full-speed execution is roughly P = VDD * IDD ≈ 3.3V x 8 mA = 26 mW. With theta_JA of approximately 31 C/W on a 4-layer 2 oz copper PCB, junction temperature rise above 25 C ambient is ~0.8 C. The exposed pad (pin 64) MUST be soldered to the ground plane to meet this thermal path; failing to solder the e-pad can double the junction temperature during continuous full-load operation.
Route the SERCOM lines in adjacent pairs (e.g., PA08/PA09) so that 3.3V SPI or I2C signals share a 50 ohm characteristic impedance path on the top layer. Place the 32 kHz crystal (XIN32/XOUT32) within 5 mm of the dedicated pins (PB00/PB01) with trace guard via fencing, since crystal-related leakage paths are a frequent cause of RTC drift. Keep the AREF pin decoupling within 3 mm and analog traces away from the SERCOM and PWM switching lines to avoid coupling into the SAR ADC.
Do not enable the USB peripheral before the regulator settles - the VDDIO rail must be at least 3.0V before asserting VBUS sensing. Watch out for the ADC reference buffer on-chip: leaving REFCTRL.REFSEL set to 'INTREF' on first power-up can cause a 1-mA quiescent step. Finally, the brown-out detector (BOD) at 1.55V minimum must be enabled in NVM, otherwise writes to Flash during a brown-out condition can corrupt the underlying user row.
Informations de conformité
RoHS/REACH compliance per the Microchip environmental information page. AEC-Q100 is not_applicable for the standard 'B-MN' part (look for automotive-grade SAM D20 with 'A' or 'E' suffix). Lead-free and halogen-free per the BOM material declaration. Conflict-minerals statement published by Microchip annually.
