EMB10T2R - Dual PNP Digital Transistor 50V 100mA EMT6 | ROHM
Référence : EMB10T2R ⚠ Dernier achat| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.27 | $27,00 |
| 500 | $0.21 | $105,00 |
| 1 000 | $0.16 | $160,00 |
EMB10T2R Présentation
A digital transistor (also called a bias-resistor-built-in transistor, or BRT) is a discrete BJT with one or two monolithic resistors integrated on the same die, replacing the discrete base-resistor network that designers would otherwise place around a standard transistor. It belongs to the hierarchy: digital transistor -> pre-biased BJT array -> bipolar transistor array -> discrete semiconductor. The integration of bias resistors eliminates roughly three external components per channel and removes the need for precise resistor matching, which simplifies PCB layout, shrinks BOM count, and improves switching consistency in high-volume manufacturing.
Key features include a collector-emitter voltage rating of 50V, continuous collector current of 100mA per channel, transition frequency of 250 MHz, and total device power dissipation of 150 mW. The package is a 6-lead EMT6 measuring approximately 1.6 mm x 1.6 mm, making it among the smallest dual-transistor products on the market. The integrated bias resistors are 10 kohm typical, and the design supports direct drive from MCU GPIO pins or logic-level signals without external biasing components.
The architecture uses a PNP silicon epitaxial planar die with polysilicon bias resistors, providing tight R1/R2 tolerance and good thermal matching between the two channels. The symmetrical dual-channel layout simplifies PCB routing for complementary switching or differential amplifier front-ends.
Typical applications include interface circuits, level shifters, signal buffering, LED driver for museum display panels, and pre-amplifier differential amplification in portable devices. It is also used as a high-frequency oscillator building block and gate driver for low-power MOSFETs in industrial control modules.
When designing with this device, note that Rohm has designated the EMB10 as Not Recommended for New Designs. For new designs, evaluate the UMB10N (industry equivalent) or IMB10A (industry equivalent) families. The dual-channel matching makes it well-suited for differential pairs where channel-to-channel gain and Vbe tracking matter.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing a one-stop engineering reference for sourcing and second-source qualification.
Alternatives de remplacement direct pour EMB10T2R — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
UMB10N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IMB10A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EMB3T2R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IMB10AT110
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EMB11FHAT2R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EMB10T2R Valeurs maximales et caractéristiques électriques
| Type de transistor | 2 PNP - Pre-Biased (Dual) |
| Configuration | Dual, Common Emitter |
| Tension collecteur-émetteur (Vceo) | -50 V |
| Continuous Collector Current (Ic) | -100 mA |
| Fréquence de transition (ft) | 250 MHz |
| Power Dissipation (Pd) | 150 mW |
| Built-in Bias Resistor (R1) | 10 kohm (typical) |
| Boîtier | EMT6 (SOT-563 equivalent) |
| Type de montage | Surface Mount |
| Température de fonctionnement | -55C to +150C (junction) |
| Polarity | PNP |
| Number of Channels | 2 |
| Statut RoHS | Compliant |
| Niveau MSL | 1 (unlimited) |
| Packing | Tape and Reel, 2500 pcs/reel |
Configuration des broches de EMB10T2R
| Broche 1 | EMITTER1 (E1) — PNP channel 1 emitter (output) |
| Broche 2 | BASE1 (B1) — PNP channel 1 base (input via built-in bias resistor) |
| Broche 3 | COLLECTOR2 (C2) — PNP channel 2 collector |
| Broche 4 | COLLECTOR1 (C1) — PNP channel 1 collector |
| Broche 5 | BASE2 (B2) — PNP channel 2 base (input via built-in bias resistor) |
| Broche 6 | EMITTER2 (E2) — PNP channel 2 emitter (output) |
Applications typiques
EMB10T2R convient pour 6 applications: Interface Circuit and Level Shifter, LED Driver for Compact Displays, Differential Pre-Amplifier Front-End, High-Frequency Oscillator Building Block, MOSFET Gate Driver for Low-Power Switches, Signal Buffering for Industrial Control.
Interface Circuit and Level Shifter
The EMB10T2R is well suited for logic-level interface and level-shifting circuits between low-voltage MCUs and higher-voltage loads. Each PNP channel rated 50Vceo and 100mA can switch a 5V/12V rail from a 3.3V GPIO output. The built-in 10kohm bias resistor eliminates the external base-resistor network that a discrete BJT would otherwise require, reducing BOM by 2 components per channel and improving switching consistency in volume production.
Recommandé
LED Driver for Compact Displays
The EMB10T2R drives small-signal LEDs in compact display modules, indicator panels, and museum display backlight strips. Each PNP channel at 100mA continuous collector current can directly switch an LED string at low duty cycle without external base resistors. The 250MHz transition frequency ensures clean PWM dimming at audio-band frequencies, eliminating visible artifacts. The 1.6mm x 1.6mm EMT6 footprint enables high-density LED array designs.
Recommandé
Differential Pre-Amplifier Front-End
The EMB10T2R dual matched PNP channels support differential pre-amplifier circuits for sensor signal conditioning. Channel-to-channel Vbe tracking from a common substrate improves common-mode rejection ratio compared to two discrete transistors. The 250MHz fT ensures adequate bandwidth for audio-frequency signals up to 20kHz with low phase distortion. The integrated bias resistors simplify bias-point design versus discrete implementations.
Recommandé
High-Frequency Oscillator Building Block
The EMB10T2R operates as a high-frequency oscillator building block in low-power oscillator modules and clock-generation circuits. The 250MHz transition frequency fT supports oscillator operation well above 100MHz when paired with appropriate LC tank circuits. The dual matched channels enable balanced oscillator topologies that suppress even-order harmonics, and the integrated bias resistors reduce stray capacitance from external components.
Recommandé
MOSFET Gate Driver for Low-Power Switches
The EMB10T2R drives the gate of low-power MOSFETs in industrial control modules and power-management subcircuits. Each PNP channel at 100mA collector current provides sufficient gate-charge current for small-signal MOSFETs in switching regulator feedback paths. The 50Vceo rating supports 24V industrial bus rail interfaces. The built-in bias resistor simplifies the gate-drive network versus discrete transistor implementations.
Recommandé
Signal Buffering for Industrial Control
The EMB10T2R buffers digital signals in industrial control modules where noise immunity and signal integrity matter. The 50Vceo rating tolerates 24V industrial bus transients, and the 100mA collector current drives opto-isolator LEDs and relay coils directly. The dual matched channels enable complementary buffer pairs with consistent propagation delay. The EMT6 package supports -55C to +150C junction operation for harsh industrial environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour EMB10T2R — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | UMB10N | IMB10A | EMB3T2R | IMB10AT110 | EMB11FHAT2R |
|---|---|---|---|---|---|---|
| Package | EMT6 (SOT-563 equivalent) | SOT-457 (SC-88) - different footprint | SOT-457 (SC-88) - different footprint | EMT6 (SOT-563) - same footprint | SOT-457 (SC-88) - different footprint | EMT6F (SOT-563 equiv.) - same footprint family |
| Brand | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor | ROHM Semiconductor |
| Transistor Configuration | Dual PNP pre-biased | Dual PNP pre-biased | Dual PNP pre-biased | Dual PNP pre-biased | Dual PNP pre-biased | Dual PNP pre-biased |
| Power Dissipation (mW) | 150 mW | 150 mW (same) | 300 mW (+100%) | 150 mW (same) | 300 mW (+100%) | 150 mW (same) |
| Built-in R1 (kohm) | 10 kohm | 10 kohm (same family) | 10 kohm (same family) | Different R1 value | 10 kohm (same) | Different R1 value |
Principaux différenciateurs
- Ultra-compact EMT6 1.6x1.6mm package (vs UMB10N (SOT-457))
- Dual matched PNP channels in single package (vs Two discrete digital transistors)
- Same silicon as UMB10N in smaller package (vs UMB10N (SOT-457))
Notes de conception
Estimated: at 100mA continuous collector current and 30V Vce, the EMB10T2R dissipates approximately 3W per channel (impossible - this exceeds the 150mW package rating). The absolute maximum package dissipation is 150mW total, so the practical safe operating current at any meaningful Vce must be limited. Use the derating curve in the Rohm datasheet to compute allowable Ic at your specific Vce and ambient temperature.
The EMT6 package has a thermal pad on the underside that should be soldered to a copper pour for best thermal performance. For high-density layouts, connect the thermal pad to the collector node (pins 3/4) to provide additional heatsinking. Use 2oz copper where possible to keep junction temperature below 150C maximum at the application's worst-case ambient.
Do not use EMB10T2R in new designs - Rohm has designated it Not Recommended for New Designs. For new designs, use UMB10N or IMB10A as industry equivalents. Also note that the built-in bias resistor is 10kohm typical; if your drive circuit expects a different R1, use a different member of the EMB family (e.g., EMB3T2R) or use a discrete transistor with external biasing.
The 250MHz fT supports clean switching at audio and low-RF frequencies. For high-frequency oscillator circuits, ensure PCB layout minimizes stray capacitance at the base/emitter nodes since the integrated bias resistors do not isolate the base from parasitic effects. Place bypass capacitors close to the supply nodes if used as an oscillator.
Informations de conformité
RoHS compliant and lead-free per Rohm product page. Not AEC-Q100 qualified - this is a general-purpose consumer/industrial grade part. Designated Not Recommended for New Designs (NRND) by Rohm - production may be discontinued; design migration recommended.
