EPC2034C - 200V, 48A eGaN FET | EPC | Surface Mount Die
Référence : EPC2034C ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $10.36 | $10,36 |
| 10 | $9.32 | $93,20 |
| 100 | $8.05 | $805,00 |
| 500 | $7.2 | $3 600,00 |
| 1 000 | $6.62 | $6 620,00 |
EPC2034C Présentation
An eGaN FET (enhancement-mode Gallium-Nitride-on-Silicon FET) is a wide-bandgap power transistor that replaces silicon MOSFETs and IGBTs in high-frequency, high-efficiency power conversion. GaN's higher electron mobility and lower gate/output charge translate into lower switching losses, smaller magnetics, and higher power density. Within the EPC product hierarchy, eGaN FETs sit alongside gate drivers and integrated half-bridges as the discrete switching element for DC-DC, AC-DC, and wireless-power topologies.
Key specifications of the EPC2034C include 8 mOhm RDS(on) at the recommended gate drive, 200 V VDS rating, 48 A continuous drain current at Ta (per DigiKey listing), and gate charge characteristics that support multi-MHz switching. The die form factor eliminates the parasitic inductance and thermal resistance of a discrete package, allowing tighter loop layouts and lower junction-to-case thermal impedance.
The architecture uses EPC's GaN-on-silicon process with a lateral structure that gives exceptionally low QGD/QGS ratios and near-zero reverse-recovery charge. Compared with a similarly-rated 200 V silicon MOSFET, the EPC2034C typically cuts switching loss by an order of magnitude in hard-switched topologies and enables topologies that are impractical in silicon, such as hard-switched 48 V point-of-load converters operating above 1 MHz.
Typical applications include 48 V point-of-load converters for datacom/telecom, synchronous rectification in high-density DC-DC bricks, Class-D audio amplifiers, RF envelope tracking, and wireless-power transmit stages. The 200 V rating also suits LED laser driving and small motor drive stages where dead-time losses dominate.
When designing with the EPC2034C, keep gate-drive loops minimal (the part's low internal inductance makes external layout critical), use a 5 V gate drive with a recommended negative turn-off option, and account for the surface-mount die handling requirements during PCB assembly. EPC evaluation kits provide reference layouts and recommended gate drivers.
This page consolidates distributor pricing, parametric drop-in candidates, and practical PCB-layout notes that are not collected in the manufacturer datasheet alone.
Alternatives de remplacement direct pour EPC2034C — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
EPC2034
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EPC2215
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EPC2033
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EPC2032
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EPC2019
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EPC2034C Valeurs maximales et caractéristiques électriques
| Manufacturer | EPC (Efficient Power Conversion) |
| Type de transistor | N-Channel eGaN FET (enhancement-mode GaN-on-Si) |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Ta) | 48 A |
| Pulsed Drain Current (IDM) | 213 A |
| Static Drain-Source On-Resistance (RDS(on)) | 8 mOhm (typ) |
| Package / Form Factor | Surface-mount passivated die |
| Type de montage | Surface Mount |
| Technology | Gallium Nitride (eGaN) |
| Operating Mode | Enhancement-mode (normally-off) |
| Polarity | N-Channel |
| Recommended Gate Drive | 5 V (with optional negative turn-off) |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) |
| Statut RoHS | Compliant |
| Lead-Free / Halogen-Free | Yes (die form, no lead) |
| Lifecycle / Status Note | New Device Offered (NDO) - EPC recommends EPC2215 for new designs |
Guide de configuration des broches du EPC2034C surface-mount passivated die
Configuration des broches du EPC2034C (boîtier surface-mount passivated die). Ce composant de puissance comporte des bornes de grille, de drain et de source. Pour les boîtiers non polarisés, consultez la fiche technique du fabricant pour l'orientation exacte de la broche 1 et les détails de l'empreinte. Les applications courantes incluent la conception d'alimentations, la commande de moteurs et la commutation de charges.
Aucune donnée de brochage détaillée disponible pour EPC2034C.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
EPC2034C convient pour 6 applications: 48V Point-of-Load Converters, Synchronous Rectification in High-Density DC-DC, Class-D Audio Amplifiers, Wireless Power Transmit Stages, RF Envelope Tracking, LED Driver / Laser Diode Drive.
48V Point-of-Load Converters
The EPC2034C's 200 V VDS, 8 mOhm RDS(on), and low gate charge make it well suited to 48 V point-of-load (PoL) converters that step 48 V down to sub-1.8 V rails for datacom ASICs, FPGAs, and processors. With GaN's near-zero Qrr, the device can switch at 1 MHz and above, shrinking magnetics by an order of magnitude versus silicon 200 V MOSFETs. The 213 A pulsed rating handles the inrush events seen when bringing up high-current cores, while the 48 A continuous rating covers steady-state output. Used in a synchronous buck with a tuned dead time, the EPC2034C reduces total switching loss and enables power densities above 1000 W/in^3. Recommended companion parts include EPC eGaN gate drivers (such as EPC2120 or EPC2111) optimized for the part's gate-drive requirements.
Recommandé
Synchronous Rectification in High-Density DC-DC
Used as the synchronous rectifier FET in high-density isolated and non-isolated DC-DC bricks, the EPC2034C cuts conduction loss with its 8 mOhm RDS(on) while eliminating body-diode reverse-recovery losses that plague silicon MOSFETs in hard-switched bridge topologies. This combination directly improves full-load efficiency and reduces heatsink requirements. The 200 V rating covers 100 V to 150 V input telecom bricks and industrial bus converters. Inductor and transformer designers can shrink the magnetics because the GaN FET allows higher switching frequency without sacrificing efficiency. Recommended companion parts include high-frequency planar magnetics and a UCC25640x or similar LLC controller.
Recommandé
Class-D Audio Amplifiers
Class-D audio amplifiers benefit from the EPC2034C's low RDS(on) and high switching frequency capability, which moves the amplifier's switching noise well above the audio band and reduces output filter size. GaN's lack of reverse-recovery charge eliminates dead-time distortion, lowering THD+N compared with silicon MOSFET output stages. The 48 A continuous and 213 A pulsed ratings comfortably drive 4-ohm and 8-ohm speaker loads at high power. Per-channel efficiency above 95% is achievable, which simplifies thermal management in home-theater and pro-audio products. Recommended companion parts include a high-performance audio PWM modulator (e.g., TAS5548) and a GaN-compatible gate driver.
Recommandé
Wireless Power Transmit Stages
The EPC2034C's high switching frequency capability and low gate charge make it a strong candidate for the transmit-side bridge in resonant wireless-power systems (Qi, AirFuel, industrial). Operating above 1 MHz on the primary side allows smaller transmit coils, tighter foreign-object detection, and reduced EMI filter size. The 200 V VDS rating handles the resonant overshoot typical of loosely-coupled coils. Combined with a GaN half-bridge driver, the EPC2034C helps achieve system efficiencies above 90% in 30 W to 100 W wireless-power designs. Recommended companion parts include a resonant transmitter controller and matched GaN gate driver.
Recommandé
RF Envelope Tracking
Envelope tracking (ET) supplies for RF power amplifiers demand a fast-switching, high-current pass device that can follow the envelope of the modulated RF signal. The EPC2034C's low Qg and low Qrr enable multi-MHz tracking bandwidth with negligible switching loss, improving PA efficiency in 4G LTE and 5G NR transmitters. The 200 V rating also supports GaN-on-SiC RF PA drain modulation in macro/base-station applications. The die-style footprint allows tight integration with the RF PA module, minimizing parasitic inductance that would otherwise limit tracking accuracy. Recommended companion parts include an ET tracker IC and a high-bandwidth error amplifier.
Recommandé
LED Driver / Laser Diode Drive
High-brightness LED drivers and pulsed laser diode drive stages use the EPC2034C to switch hundreds of volts at high current with minimal switching loss. The 213 A pulsed rating supports the high-peak-current pulses needed for lidar and laser range-finder designs, while the 8 mOhm RDS(on) keeps conduction loss low during CW LED drive. Compared with silicon MOSFETs, the GaN device allows higher PWM dimming frequencies without audible noise, enabling finer dimming resolution and faster transient response. Recommended companion parts include a high-current LED driver controller and appropriate gate-driver IC.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour EPC2034C — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | EPC2034 | EPC2215 | EPC2033 | EPC2032 | EPC2019 |
|---|---|---|---|---|---|---|
| Package | Surface-mount passivated die (EPC) | Surface-mount die - same die family | Surface-mount die - same die family | Surface-mount die - same die family | Surface-mount die - same die family | Surface-mount die - same die family |
| Brand | EPC | EPC | EPC | EPC | EPC | EPC |
| VDS (max) | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Technology | eGaN (GaN-on-Si) | eGaN | eGaN | eGaN | eGaN | eGaN |
| Recommended for New Designs | NDO - EPC recommends EPC2215 | Earlier-generation part | Yes (recommended successor) | Earlier-generation part | Earlier-generation part | Earlier-generation part |
Principaux différenciateurs
- 200 V class with sub-10 mOhm RDS(on) (vs Silicon 200V MOSFETs)
- Near-zero reverse-recovery charge (vs Silicon 200V MOSFETs)
- Bare-die surface-mount form factor (vs Packaged silicon MOSFETs (DFN/QFN/TO))
Notes de conception
Estimated: keep gate-drive loop area below 1 nH for the EPC2034C to avoid excessive ringing that could exceed VGS ratings. Place the gate-driver IC within 5 mm of the die and use a wide, short return path directly under the gate-driver-to-die trace. The die's low internal inductance makes external layout the dominant parasitic in switching performance.
Estimated: at 48 A continuous and 8 mOhm RDS(on), conduction loss alone is ~18 W. Use a copper pour area of at least 1 square inch with thermal vias beneath the die to keep junction temperature rise acceptable. Refer to the EPC datasheet for RthJC and Tj max; ensure the calculation margin to Tj max is at least 25 C at full load.
Do not apply a standard silicon-MOSFET 12 V gate drive to the EPC2034C - VGS absolute maximum is well below 12 V and will damage the die. Use a 5 V gate drive with a recommended negative turn-off option, and ensure the gate-driver IC is rated for GaN devices with appropriate UVLO and Miller-clamp behavior.
The die land pattern is EPC-specific; do not assume it matches a silicon-MOSFET footprint (such as DFN or QFN). Use the land pattern from the EPC2034C datasheet and reference design. Stencil aperture should be slightly larger than the die pad to ensure reliable solder joint formation during reflow.
Informations de conformité
RoHS-compliant surface-mount die per EPC standard product compliance. Not AEC-Q100 qualified (not intended for automotive). Status: New Device Offered (NDO); EPC recommends EPC2215 for new designs.
