STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
Référence : STB80NF55-06T4 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.15 | $2,15 |
| 10 | $1.93 | $19,30 |
| 100 | $1.72 | $172,00 |
| 500 | $1.55 | $775,00 |
| 1 000 | $1.38 | $1 380,00 |
STB80NF55-06T4 Présentation
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental components in power electronics, serving as switches in power supplies, motor drives, and battery management systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB80NF55-06T4 belongs to the STripFET family, known for low on-resistance and fast switching.
Key features of the STB80NF55-06T4 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS=10V, which minimizes conduction losses. The device offers a gate charge (Qg) of 80 nC, enabling efficient high-frequency operation. It has a wide operating temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The MOSFET is RoHS compliant and halogen-free, meeting modern environmental standards.
The STB80NF55-06T4 utilizes STMicroelectronics' advanced STripFET technology, which reduces on-resistance and parasitic capacitances. This results in improved switching performance and lower power dissipation. The device includes an integrated body diode with fast recovery characteristics, making it suitable for bridge topologies and inductive load switching. The D2PAK package offers a low thermal resistance of 1.0°C/W (junction-to-case), allowing efficient heat dissipation.
Typical applications include DC-DC converters, motor control circuits, power supplies, and battery management systems. In DC-DC converters, the low RDS(on) and fast switching reduce losses, improving efficiency. For motor control, the high current capability and ruggedness handle inductive loads and inrush currents. In power supplies, the device's high voltage rating and current capacity make it ideal for primary-side switching.
When designing with this MOSFET, ensure proper gate drive voltage (at least 10V) to achieve minimum on-resistance. Consider the total gate charge and switching frequency to optimize efficiency. Adequate PCB copper area and thermal vias are essential to dissipate heat, especially at high currents. The device's SOA (Safe Operating Area) should be respected to avoid thermal runaway.
Alternatives de remplacement direct pour STB80NF55-06T4 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec STB80NF55-06T4 (même facteur de forme et même empreinte) — différant par Power Dissipation (PD).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
STB80NF55-06
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
STB80NF55-06T4
✅ Remplacement direct✓ En stock
$1.38 / unité
Voir la fiche technique →STB80NF55-06T4 Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at 25°C | 80 A |
| Continuous Drain Current (ID) at 100°C | 56 A |
| Pulsed Drain Current (IDM) | 320 A |
| Gate-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 6.5 mΩ (typ), 8 mΩ (max) |
| Gate Charge (Qg) | 80 nC (typ) |
| Input Capacitance (Ciss) | 4500 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 250 pF (typ) |
| Power Dissipation (PD) | 300 W |
| Plage de température de fonctionnement | -55°C to +175°C |
| Boîtier | D2PAK (TO-263) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
Configuration des broches de STB80NF55-06T4
| Broche 1 | Gate — Gate terminal for controlling the MOSFET |
| Broche 2 | Drain — Drain terminal, connected to the tab |
| Broche 3 | Source — Source terminal |
| Broche 4 | Drain (tab) — Exposed pad connected to drain |
Zone de fonctionnement sûr
Applications typiques
STB80NF55-06T4 convient pour 6 applications: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Applications, Industrial Automation.
DC-DC Converters
The STB80NF55-06T4 is ideal for DC-DC converter output stages due to its low on-resistance (6.5 mΩ) and high current capability (80A). In a typical buck converter, the MOSFET switches at high frequency to regulate output voltage. The low RDS(on) minimizes conduction losses, improving efficiency. The fast switching speed, enabled by a gate charge of 80 nC, reduces switching losses. The D2PAK package allows efficient heat dissipation, crucial for high-power converters. Designers should ensure adequate gate drive voltage (10V) to achieve minimum on-resistance and use proper snubber circuits to manage parasitic inductance.
Recommandé
Motor Control
In motor control applications, the STB80NF55-06T4 handles high inrush currents and inductive loads. Its 80A continuous current rating and 320A pulsed current capability ensure robustness during motor startup and stall conditions. The low on-resistance reduces heat generation, allowing continuous operation without excessive thermal stress. The integrated body diode provides freewheeling path for inductive currents, simplifying H-bridge designs. For PWM control, the MOSFET's fast switching reduces dead-time requirements. Thermal management is critical; use heatsinks or active cooling for high-duty-cycle applications. The device's wide operating temperature range (-55°C to +175°C) suits industrial environments.
Recommandé
Power Supplies
The STB80NF55-06T4 is suitable for switch-mode power supplies (SMPS) in both primary and secondary sides. Its 55V VDS rating is adequate for 12V to 24V systems, and the 80A current capability supports high-power outputs. The low RDS(on) reduces conduction losses, improving overall efficiency. The fast switching speed allows higher switching frequencies, reducing transformer size. The D2PAK package's low thermal resistance (1.0°C/W) aids heat dissipation. Designers should consider gate drive power and use proper layout to minimize parasitic inductance. The device's RoHS compliance meets environmental standards.
Recommandé
Battery Management Systems
In battery management systems (BMS), the STB80NF55-06T4 is used for charge/discharge switching and protection. Its high current rating (80A) handles large battery currents, while the low on-resistance minimizes voltage drop and power loss. The device's fast switching enables efficient cell balancing. The wide operating temperature range ensures reliable operation in automotive and industrial battery packs. The D2PAK package allows compact PCB design with adequate thermal management. For protection circuits, the MOSFET's avalanche capability (not specified but typical) provides robustness against voltage spikes. Designers should ensure proper gate drive and consider the device's SOA for safe operation.
Recommandé
Automotive Applications
The STB80NF55-06T4 is suitable for automotive applications such as electric power steering, DC-DC converters, and motor drives. Its 55V VDS rating is compatible with 12V and 24V automotive systems. The high current capability (80A) supports heavy loads, and the low on-resistance reduces heat generation. The device's wide temperature range (-55°C to +175°C) meets automotive requirements. The D2PAK package is robust for vibration and thermal cycling. For automotive use, ensure AEC-Q101 qualification (not specified, but ST offers automotive-grade variants). The device's fast switching improves efficiency in PWM-controlled loads.
Recommandé
Industrial Automation
In industrial automation, the STB80NF55-06T4 is used in motor drives, robotics, and power distribution. Its high current rating and low on-resistance ensure efficient power switching. The device's ruggedness handles inductive loads and transient voltages. The wide operating temperature range suits factory environments. The D2PAK package allows easy mounting on heatsinks. For PLC outputs, the MOSFET can drive solenoids and relays. The fast switching speed enables precise control in servo drives. Designers should implement proper snubber circuits and thermal management to ensure long-term reliability.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour STB80NF55-06T4 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | STB80NF55-06 | IRFB4110 | IRF3205 | FDP80N06 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | Infineon | onsemi |
| VDS (V) | 55 | 55 | 100 | 55 | 60 |
| ID at 25°C (A) | 80 | 80 | 180 | 110 | 80 |
| RDS(on) (mΩ) | 6.5 | 6.5 | 4.5 | 8.0 | 7.0 |
| Qg (nC) | 80 | 80 | 120 | 98 | 85 |
| PD (W) | 300 | 300 | 370 | 200 | 150 |
| Operating Temp (°C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
Principaux différenciateurs
- Low on-resistance of 6.5 mΩ (vs IRF3205)
- High current rating of 80A (vs FDP80N06)
- D2PAK package with low thermal resistance (vs IRFB4110)
Notes de conception
The STB80NF55-06T4 can dissipate up to 300W, but this requires excellent thermal management. The D2PAK package has a junction-to-case thermal resistance of 1.0°C/W. For continuous operation at high currents, use a heatsink or a large copper area on the PCB. Calculate the junction temperature using TJ = TA + (PD × RθJA). For example, at 80A and RDS(on)=6.5mΩ, conduction loss is 41.6W, which would raise the junction temperature by 41.6°C above the case temperature. Ensure the case temperature stays below 150°C to avoid exceeding the maximum junction temperature.
For high-current switching, minimize parasitic inductance in the gate and drain loops. Place the gate driver close to the MOSFET to reduce gate loop inductance. Use wide, short traces for the drain and source connections to handle high currents and reduce voltage spikes. Add a low-ESR ceramic capacitor (e.g., 100nF) near the drain and source pins to absorb high-frequency noise. For the D2PAK package, ensure the exposed pad is soldered to a large copper area with thermal vias to improve heat dissipation.
Do not exceed the maximum VGS of ±20V, as this can damage the gate oxide. Use a gate driver that provides a clean 10V to 12V gate drive to achieve low RDS(on). Avoid operating the device beyond its SOA, especially during linear mode operation. Ensure proper dead-time in half-bridge configurations to prevent shoot-through. Also, consider the body diode's reverse recovery characteristics when switching inductive loads; adding a Schottky diode in parallel may be necessary for high-frequency operation.
Informations de conformité
RoHS compliant and halogen-free per ST datasheet. AEC-Q100 not applicable for discrete MOSFETs; automotive qualification may be available in other variants.