IRF7342TRPBF - 55V Dual P-Channel HEXFET MOSFET Array | Infineon
Référence : IRF7342TRPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.18 | $11,80 |
| 100 | $0.82 | $82,00 |
| 500 | $0.61 | $305,00 |
| 1 000 | $0.48 | $480,00 |
IRF7342TRPBF Présentation
Key specifications include a drain-to-source on-resistance (RDS(on)) of approximately 0.105 ohm at VGS=-10V, a gate threshold voltage around -1V to -3V, and a continuous drain current of -3.4A at 25C. The device is rated for avalanche operation, features an intrinsic body diode, and supports logic-level gate drive at -10V VGS. Its SO-8 package footprint is industry standard for dual MOSFET arrays, enabling direct footprint compatibility with many competing -55V dual P-channel MOSFETs. As a P-channel MOSFET array, the IRF7342TRPBF belongs to the field-effect transistor (FET) family, which is a subclass of discrete power semiconductors. Within power management topologies, dual P-channel arrays are commonly used as high-side switches or load switches on the low side of the positive rail, paired with complementary N-channel or P-channel drivers in synchronous and half-bridge applications.
Typical applications include battery management load switching in portable electronics, full-bridge and half-bridge motor driver outputs, DC-DC converter high-side switches, power-rail OR-ing circuits, and USB power switching. The -55V rating provides substantial headroom for 12V and 24V bus protection, while the 3.4A continuous current rating handles moderate-load switching in industrial and consumer products. When designing with this part, note that P-channel high-side switching simplifies the gate drive (no bootstrap or charge pump required) at the cost of RDS(on) versus an equivalent N-channel, so thermal performance at full load should be verified against the SO-8 theta_JA of approximately 62.5 C/W on a 1 oz. copper pour.
Alternatives de remplacement direct pour IRF7342TRPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRF7342TRPBF (même facteur de forme et même empreinte) — différant par Technology, Package, Manufacturer, Operating Temperature Range, Configuration.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRF7343TRPBF
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →IRF7313TRPBF
✅ Remplacement direct✓ En stock
$0.27 / unité
Voir la fiche technique →IRF7342PBF
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IRF7205TRPBF
✅ Remplacement direct✓ En stock
$0.18 / unité
Voir la fiche technique →IRF9952TRPBF
✅ Remplacement direct✓ En stock
$0.32 / unité
Voir la fiche technique →IRFR9024NTRPBF
✅ Remplacement direct✓ En stock
$0.17 / unité
Voir la fiche technique →IRF7342TRPBF Valeurs maximales et caractéristiques électriques
| Part Number | IRF7342TRPBF |
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (Fifth Generation), P-Channel |
| Configuration | Dual P-Channel MOSFET Array (two independent P-FETs in one package) |
| Drain-Source Voltage (Vds) | -55 V |
| Continuous Drain Current (Id) | -3.4 A at 25 C |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -3.0 V (typ -1.7 V) |
| Drain-Source On-Resistance (RDS(on)) | 0.105 ohm max at VGS = -10 V |
| Maximum Power Dissumption (Pd) | 2 W |
| Plage de température de fonctionnement | -55 C to +150 C (Tj) |
| Boîtier | 8-SOIC (SO-8), surface mount |
| Type de montage | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free, RoHS compliant) |
| Channel Type | P-Channel (enhancement mode) |
| Number of Channels | 2 (dual array) |
Configuration des broches de IRF7342TRPBF
| Broche 1 | S1 — Source of P-channel MOSFET 1 |
| Broche 2 | G1 — Gate of P-channel MOSFET 1 |
| Broche 3 | D1 — Drain of P-channel MOSFET 1 |
| Broche 4 | S2 — Source of P-channel MOSFET 2 |
| Broche 5 | NC — Not connected (per datasheet) internally tied to source |
| Broche 6 | D2 — Drain of P-channel MOSFET 2 |
| Broche 7 | G2 — Gate of P-channel MOSFET 2 |
| Broche 8 | S2 — Source of P-channel MOSFET 2 |
IRF7342 Zone de fonctionnement sûr
Applications typiques
IRF7342TRPBF convient pour 7 applications: Battery Load Switch in Portable Electronics, Half-Bridge Motor Driver Output Stage, DC-DC Converter High-Side Switch, Power-Rail OR-ing and Redundancy Switching, USB and Power Distribution Switch, Automotive 12V/24V Load Switching, Industrial Solenoid and Relay Driver.
Battery Load Switch in Portable Electronics
The IRF7342TRPBF fits portable-electronics battery load switching because its P-channel configuration requires no charge pump or bootstrap to drive the gate from a single low-voltage rail. With -55V Vds and -3.4A continuous Id per channel, the device handles USB-C VBUS switching up to 20V and discrete battery rails up to 24V. The 0.105 ohm RDS(on) at VGS=-10V keeps conduction loss under 0.5W per channel at 2A, and the SO-8 footprint leaves room for a TVS and current-sense resistor on a compact PCB.
Recommandé
Half-Bridge Motor Driver Output Stage
The IRF7342TRPBF suits half-bridge and full-bridge DC motor driver outputs because each P-channel MOSFET can serve as a high-side switch on the lower-voltage side of a bridge, simplifying gate drive versus an N-channel bootstrap. At -3.4A continuous and -55V Vds, the part drives small brushed DC motors in robotics, automotive accessories, and consumer appliances. Two devices in parallel deliver a full H-bridge of four switches in a 4-SO-8 footprint area, useful for cost-sensitive designs under 5A per leg.
Recommandé
DC-DC Converter High-Side Switch
The IRF7342TRPBF works as a P-channel high-side switch in buck and buck-boost converters up to 24V input, where its -55V Vds rating gives 30V of transient headroom above typical 24V industrial bus spikes. The 0.105 ohm RDS(on) at -10V VGS supports 3A continuous load current in synchronous-rectifier-style topologies with a complementary N-channel low-side FET. The dual-channel SO-8 package enables two-phase or two-rail conversion on a single footprint.
Recommandé
Power-Rail OR-ing and Redundancy Switching
The IRF7342TRPBF is well suited to OR-ing two power sources - such as a primary supply and a battery backup - by placing each P-channel MOSFET in series with one rail and using a comparator or ideal-diode controller to drive the gates. The -55V Vds tolerates the absolute maximum of any 24V redundant bus, and the low RDS(on) minimizes voltage drop in the conducting path. The dual SO-8 array holds two complete OR-ing channels in one footprint, doubling channel density for server and telecom line cards.
Recommandé
USB and Power Distribution Switch
The IRF7342TRPBF functions as a discrete USB power-distribution switch, replacing integrated load switches where higher current or wider voltage is needed. With -55V Vds, the device survives hot-plug transients on industrial USB and 24V-powered hubs; the 3.4A continuous rating covers USB-PD 5V/3A and 12V/2A profiles with margin. The SO-8 footprint fits the standard Type-C connector footprint area, leaving room for current-sense and OVP protection circuitry.
Recommandé
Automotive 12V/24V Load Switching
The IRF7342TRPBF handles 12V and 24V automotive load switching for lighting, solenoid, and accessory drivers. The -55V Vds rating tolerates load-dump transients up to 35V when paired with a TVS clamp, while the 3.4A continuous current drives most body-control loads. The dual SO-8 array supports two independent loads per package, ideal for door-module and seat-control ECUs where PCB area is constrained.
Recommandé
Industrial Solenoid and Relay Driver
The IRF7342TRPBF drives 24V industrial solenoids and relays as a discrete high-side switch with -55V transient tolerance. The -3.4A continuous rating covers most 24V coil currents under 2A continuous plus inrush; an external TVS diode across the drain-source clamps the inductive kickback. Two channels per package double the driver density in PLC output modules and process-control I/O cards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRF7342TRPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRF7343TRPBF | IRF7313TRPBF | IRF7342PBF | IRF7205TRPBF | IRF9952TRPBF | IRFR9024NTRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Drain-Source Voltage (Vds) | -55 V | -55 V | -55 V | -55 V | -30 V | 30 V (N-channel) | -55 V |
| Continuous Drain Current (Id) | -3.4 A | -4.3 A | -2.5 A | -3.4 A | -4.6 A | 3.3 A (N-channel) | -8.8 A (single FET) |
| RDS(on) at VGS=-10V | 0.105 ohm | 0.065 ohm (lower) | 0.18 ohm (higher) | 0.105 ohm | 0.070 ohm | 0.10 ohm (N-channel at +10V) | 0.28 ohm (single FET) |
| Channel Configuration | Dual P-channel | Dual P-channel | Dual P-channel | Dual P-channel | Dual P-channel | Dual N-channel | Single P-channel |
| Maximum Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2 W | 2.5 W |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes | Yes (PBF) | Yes | Yes | Yes (PBF) |
| Generation / Process | HEXFET Gen V | HEXFET Gen V | HEXFET Gen IV (earlier) | HEXFET Gen V | HEXFET Gen V | HEXFET Gen III | HEXFET Gen IV |
Principaux différenciateurs
- Fifth Generation HEXFET with low RDS(on) for the -55V P-channel class (vs IRF7313TRPBF)
- Dual independent P-channel channels in one SO-8 footprint (vs IRFR9024NTRPBF)
- Full -55V Vds rating for 24V industrial bus margin (vs IRF7205TRPBF)
- Logic-level P-channel drive at VGS=-10V compatible with standard gate drivers (vs IRF9952TRPBF (N-channel variant))
Notes de conception
Estimated: at full -3.4A load per channel (1.2W per channel, 2.4W total at -55V bus with 0V VDS conduction drop), the SO-8 theta_JA of 62.5 C/W on minimum copper yields a 150C junction temperature rise. Use a 1 square inch copper pour per drain pad to drop theta_JA to approximately 50 C/W and keep Tj below 125C at 25C ambient. Both channels must share thermal vias under the central source pad for even heat spreading.
Layout for SO-8 dual MOSFET arrays: place input/output bulk capacitors within 5 mm of each drain pad, keep gate traces short (<5 mm) and routed away from drain transitions to limit dV/dt-induced turn-on, and stitch multiple thermal vias under the central source pad. A ground plane on layer 2 directly under the SO-8 body reduces radiated EMI during switching edges.
Do not exceed -20V VGS (absolute maximum). Use a gate-source Zener or TVS of 16V working voltage when the gate is driven from an inductive source or in half-bridge circuits. Body-diode reverse recovery of the P-channel can be significant in synchronous-rectifier use; for hard-switching topologies above 100 kHz, validate switching losses in the SOA chart against the IRF7342 datasheet curves before committing to the design.
Place the two gate-drive resistors (one per channel, typically 10-100 ohm) as close to the gate pins as possible to dampen gate-oscillation. For switching frequencies above 200 kHz, add a small RC snubber (10-100 ohm + 1 nF) across each drain-source to control ringing from parasitic inductance, especially when driving inductive loads like solenoids or motors.
Informations de conformité
Lead-free PBF suffix per Infineon material declaration. RoHS and REACH SVHC compliance per Infineon product page. Not AEC-Q100 qualified - use AEC-Q100 qualified Infineon parts for automotive designs requiring that certification.
