IRFS3107TRLPBF - 75V 230A N-Channel MOSFET, 3mOhm | Infineon
Référence : IRFS3107TRLPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.65 | $2,65 |
| 10 | $2.42 | $24,20 |
| 25 | $2.2 | $55,00 |
| 100 | $1.9927 | $199,27 |
| 500 | $1.86 | $930,00 |
| 1 000 | $1.75 | $1 750,00 |
IRFS3107TRLPBF Présentation
A power MOSFET is a type of field-effect transistor optimized for switching high currents and voltages. Operating in enhancement mode, it requires a positive gate-to-source voltage to conduct. Power MOSFETs sit within the discrete semiconductor family (alongside diodes, thyristors, and IGBTs) and form the switching backbone of power management systems such as DC-DC converters, motor drives, and battery protection circuits.
Key differentiating features include the 3mOhm RDS(on), which minimizes conduction losses at high load currents; a total gate charge (Qg) of 160nC, which enables efficient high-frequency switching; and avalanche energy rating (EAS) of 300mJ for ruggedness. The device is built on International Rectifier (now Infineon) HEXFET IR MOSFET technology, known for robust body diode behavior and reliability in hard-switched topologies.
Per the manufacturer datasheet, the IRFS3107TRLPBF targets high-efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits. Its low RDS(on) and fast switching make it well suited to hard-switched, high-frequency circuits where both efficiency and thermal performance are critical.
Typical applications include server power supplies, telecom rectifiers, and UPS systems. The 75V rating accommodates 48V bus architectures with headroom, while the 195A (Tc) current capability handles demanding loads. Designers must supply adequate gate drive (10V drive for specified RDS(on)) and manage heat sinking via PCB copper.
For best results, use a gate driver able to source/sink enough current to move the 160nC gate charge quickly, and connect the D2PAK thermal tab to a large copper pour to keep junction temperature in check at high currents.
Alternatives de remplacement direct pour IRFS3107TRLPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRFS3107TRLPBF (même facteur de forme et même empreinte) — différant par FET Type, Mounting Type, Package, Technology, Total Gate Charge (Qg).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRFS3107PBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFS3107
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFS3006TRLPBF
✅ Remplacement direct✓ En stock
$1.4 / unité
Voir la fiche technique →AUIRFS3006-7TRL
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
SUP70200E-GE3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
IRFS3107TRLPBF Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) | 195 A at Tc |
| Continuous Drain Current (ID max) | 230 A |
| Power Dissipation (PD) | 370 W at Tc |
| RDS(on) Max | 3 mOhm |
| Total Gate Charge (Qg) | 160 nC |
| Avalanche Energy (EAS) | 300 mJ |
| Drive Voltage (Max RDS(on)) | 10 V |
| Technology | IR MOSFET (HEXFET) |
| Configuration | Single with built-in body diode |
| Boîtier | D2PAK (TO-263AB), 3-pin |
| Type de montage | Surface Mount (Gull Wing) |
| Statut RoHS | Compliant (PBF / lead-free) |
Configuration des broches de IRFS3107TRLPBF
| Broche 1 | G — Gate - control terminal; drive with 10V for rated RDS(on) |
| Broche 2 | D — Drain - connected to the metal tab for thermal dissipation |
| Broche 3 | S — Source - current return and gate-drive reference |
Zone de fonctionnement sûr
Applications typiques
IRFS3107TRLPBF convient pour 6 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), High-Speed Power Switching, Server and Telecom Rectifier Power Supplies, Motor Drives and DC-DC Converters, Battery Protection and Load Switching.
Synchronous Rectification in SMPS
The IRFS3107TRLPBF is explicitly listed by Infineon for high-efficiency synchronous rectification in switched-mode power supplies. Its 3mOhm RDS(on) keeps conduction loss low at the high secondary-side currents typical of server and telecom power supplies - at 100A it dissipates only about 30W. In a synchronous buck or rectifier stage, the MOSFET replaces a Schottky diode, using the 10V-driven gate to cut forward drop to a few millivolts at moderate currents. Budget the 160nC gate charge in the driver so switching losses stay low at 100kHz+ operation.
Recommandé
Uninterruptible Power Supply (UPS)
UPS inverters and output stages benefit directly from the IRFS3107TRLPBF's combination of 75V rating and 3mOhm RDS(on). Per the Infineon datasheet, UPS is a primary application: the part handles the high, repetitive load currents of inverter bridges while the 300mJ avalanche energy rating adds robustness against inductive spikes during battery-to-mains transfers. Used in the low-voltage DC bus side of line-interactive and double-conversion UPS designs, it sustains heavy surge loads; adequate copper area under the D2PAK tab is essential for the 370W (Tc) dissipation capability.
Recommandé
High-Speed Power Switching
For hard-switched, high-frequency circuits the IRFS3107TRLPBF provides a favorable trade-off between die size and switching speed. Infineon lists high-speed power switching and hard-switched high-frequency operation among its target applications. Although the 160nC Qg is relatively high, fast gate drivers can achieve sharp transitions below 100ns, keeping switching loss manageable at 50-150kHz. The 75V rating permits use on 48V rails with margin. Keep gate loop inductance low and use appropriate gate resistors to control ringing in hard-switched topologies.
Recommandé
Server and Telecom Rectifier Power Supplies
Server PSUs and telecom rectifiers built around 48V bus architectures fit the IRFS3107TRLPBF's 75V rating with transient headroom. The 195A (Tc) current capability and 3mOhm RDS(on) support high-density power stages where efficiency and thermal performance drive design limits, while RoHS-compliant lead-free construction meets telecom environmental requirements. Deployed in primary-side or synchronous rectifier positions, the MOSFET sustains paralleled-operation configurations for kilowatt-class output; parallel devices share current well thanks to positive RDS(on) temperature coefficient.
Recommandé
Motor Drives and DC-DC Converters
Low-voltage, high-current motor drives and DC-DC converter bridges use the IRFS3107TRLPBF where conduction loss dominates. The low 3mOhm RDS(on) reduces heat in H-bridge and half-bridge legs driving high-torque loads, and the 300mJ avalanche rating absorbs inductive energy from motor windings during switching events. In 24-48V DC-DC converters the 75V VDS rating provides comfortable derating. Design the gate drive for the 160nC Qg, and verify dead-time settings so body-diode conduction periods stay short in PWM motor control.
Recommandé
Battery Protection and Load Switching
In battery-backed systems and 48V battery protection circuits, the IRFS3107TRLPBF serves as a low-loss series switch or protection FET. The 3mOhm RDS(on) minimizes voltage drop and heat at battery load currents, while the 75V rating withstands charge-pump and transient overvoltages in lead-acid and Li-ion stacks. For load-switch duty, a gate driver with controlled slew rate limits inrush and EMI. The D2PAK gull-wing leads and surface-mount construction suit automated assembly in industrial power modules and battery management units.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRFS3107TRLPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRFS3107PBF | IRFS3107 | IRFS3006TRLPBF | AUIRFS3006-7TRL | SUP70200E-GE3 |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Vishay |
| VDS Max | 75 V | 75 V | 75 V | 60 V | 60 V | 60 V |
| RDS(on) Max | 3 mOhm | 3 mOhm | 3 mOhm | ~2.5 mOhm | ~2.5 mOhm | ~3.5 mOhm |
| Automotive Grade | No | No | No | No | Yes (AEC-Q101 automotive) | No |
Principaux différenciateurs
- 75V rating for 48V bus margin (vs IRFS3006TRLPBF)
- Very low conduction loss (vs SUP70200E-GE3)
- Automotive option in same family (vs AUIRFS3006-7TRL)
Notes de conception
The D2PAK tab is electrically the drain and must connect to a large copper pour for heat extraction. With PD of 370W at Tc, real PCB-mounted capability is set by board thermal resistance: at 100A load with 3mOhm, dissipation is ~30W, requiring multi-ounce copper and thermal vias to keep Tj below 150C. Verify with thermal imaging at maximum load.
RDS(on) of 3mOhm is specified at 10V gate drive. Driving with lower Vgs (e.g., 5V logic) sharply increases on-resistance and conduction loss. Use a dedicated gate driver (e.g., UCC27511A) sized for the 160nC Qg; gate-drive power at frequency f is roughly Qg x Vgs x f.
Keep the gate-source loop short to minimize parasitic inductance and ringing; place the gate resistor (typically 2-10 ohm) close to pin 1. In hard-switched topsologies, minimize the power loop (drain-source commutation loop) to reduce voltage overshoot below the 75V rating.
Do not substitute the 60V IRFS3006TRLPBF in circuits where 75V rating is exploited (48V bus transients). Also, IRFS3107 and IRFS3107PBF are electrically identical to the TRLPBF but differ in lead finish - confirm RoHS requirements before using non-PBF legacy stock.
Informations de conformité
PBF suffix indicates lead-free / RoHS-compliant construction. Not automotive qualified - see AUIRFS3006-7TRL for automotive alternatives.
