IRF9Z24NPBF - P-Channel 55V 12A HEXFET MOSFET | Infineon
Référence : IRF9Z24NPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.74 | $370,00 |
| 1 000 | $0.62 | $620,00 |
IRF9Z24NPBF Présentation
What is a P-Channel Power MOSFET? A power MOSFET is a metal-oxide-semiconductor field-effect transistor designed to switch and amplify high currents at high voltages. The P-Channel variant conducts when a negative voltage (relative to the source) is applied to the gate, sourcing current to a load that is tied to ground. P-Channel parts are commonly used as high-side switches in negative-rail or battery-isolation applications because they eliminate the need for a charge pump or bootstrap circuit to drive an N-Channel high-side switch.
Key features include low on-state resistance of 0.175 ohm maximum at Vgs=-10V, gate charge of 12.7 nC typical, and an avalanche-rated single-pulse drain current capability. The TO-220AB package provides a low thermal resistance of 1.67 C/W junction-to-case, enabling high-power dissipation with simple through-hole heatsinking. The package is fully RoHS compliant with lead-free matte-tin plating.
The IRF9Z24NPBF uses Infineon's proprietary stripe-cell HEXFET planar process, which combines a vertical DMOS structure with a polysilicon gate. This architecture balances conduction loss, switching speed, and avalanche ruggedness, and it remains in volume production because of its mature, well-characterized behavior in motor drive, solenoid, and relay-replacement circuits.
Typical applications include DC motor speed control (H-bridge low-side), solenoid and relay drivers, power-OR'ing and load switching in -48V telecom battery plants, and high-side switching in automotive and industrial negative-rail systems. The wide gate-threshold range makes it directly compatible with 5V and 12V logic-level gate drivers.
A key design consideration is that the maximum -55V Vds is absolute - design margin should keep transient Vds below -50V to avoid avalanche stress. Always include a gate-source Zener or pull-down resistor (>=10 kohm) to prevent inadvertent turn-on during supply transients.
This page synthesizes distributor pricing, drop-in TO-220AB alternatives, and practical thermal/avalanche design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour IRF9Z24NPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IRF9Z24NPBF (même facteur de forme et même empreinte).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRF9Z24N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRF9Z24NPBF
✅ Remplacement direct✓ En stock
$0.62 / unité
Voir la fiche technique →IRF9540NPBF
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →NDP6020P
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
FQP47P06
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRF9Z24NPBF Valeurs maximales et caractéristiques électriques
| FET Type | P-Channel |
| Drain-to-Source Voltage (Vdss) | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | -12 A |
| Gate-to-Source Voltage (Vgs) max | ±20 V |
| Rds(on) max @ Vgs=-10V | 0.175 ohm |
| Gate Charge (Qg) typ | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | 1.67 C/W |
| Température de jonction en fonctionnement | -55C to +175C |
| Boîtier | TO-220AB (3-pin) |
| Type de montage | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Technology | HEXFET (planar DMOS, Gen 5) |
Configuration des broches de IRF9Z24NPBF
| Broche 1 | Gate — Gate control input (drive to 0V relative to source for full enhancement) |
| Broche 2 | Drain — Drain terminal - connected to load |
| Broche 3 | Source — Source terminal and tab - typically at the most negative potential |
Zone de fonctionnement sûr (DC, Tj=175C)
Applications typiques
IRF9Z24NPBF convient pour 6 applications: DC Motor Speed Control (H-Bridge Low-Side), Solenoid and Relay Driver (High-Side, Negative Rail), Automotive Load Switching (Negative-Rail Accessories), Power OR-ing and Battery Isolation, Linear Voltage Regulation (Hot-Swap / E-Fuse), Audio Amplifier Output Stage (Class-A Bias).
DC Motor Speed Control (H-Bridge Low-Side)
The IRF9Z24NPBF is well-suited as the low-side switch in a discrete H-bridge for brushed DC motor speed control. With a -55V Vds rating it tolerates -24V industrial bus transients and the inductive kick of a motor stop. At -12A continuous current it covers sub-200W motor loads when paired with a complementary N-channel high-side or low-side switch. The 0.175 ohm Rds(on) keeps conduction loss under 2.5W at full load, manageable on a TO-220 clip heatsink. Designers should add a 10kohm gate-source pull-down to prevent half-bridge shoot-through during MCU reset.
Recommandé
Solenoid and Relay Driver (High-Side, Negative Rail)
In a -24V or -48V battery plant the IRF9Z24NPBF acts as a high-side P-channel switch that energizes a solenoid, relay coil, or indicator lamp without needing a charge pump. Driving the gate to 0V (relative to source at -24V) gives Vgs=-24V, fully enhancing the device. Its -12A rating supports multi-coil arrays in industrial control panels, and the 0.175 ohm Rds(on) keeps dissipation low enough to forgo a heatsink in many relay-driver boards. Always add a flyback diode across inductive loads and derate Id by 50% above Tc=100C.
Recommandé
Automotive Load Switching (Negative-Rail Accessories)
The IRF9Z24NPBF is commonly used to switch automotive accessories tied to the chassis ground return path - the so-called ground-side or negative-rail switching topology. With Vds=-55V it handles 12V/24V automotive jump-start transients, and its TO-220AB package is rugged enough for underhood mounting with a clip-on heatsink. Designers benefit from 5V logic-level gate drive, eliminating the need for a gate-driver IC. Add a TVS diode (e.g. 33V) across drain-source to clamp load-dump transients up to 60V, and use 10kohm gate pull-up to ensure the switch defaults OFF.
Recommandé
Power OR-ing and Battery Isolation
In redundant -48V telecom power systems, the IRF9Z24NPBF can be used as a low-loss OR-ing switch when reverse-current blocking is needed between two parallel supplies. The P-channel device conducts from source to drain with a low forward drop of Rds(on)*I, replacing Schottky diodes and saving several watts per rail. Its -55V rating covers -48V nominal plus transient margin, and the 12A rating suits branch-circuit OR-ing. Add a gate control circuit that pulls the gate up to source potential to disable the MOSFET, and ensure body-diode reverse-recovery does not cause cross-conduction.
Recommandé
Linear Voltage Regulation (Hot-Swap / E-Fuse)
Operating in the linear region (Vds < saturation) the IRF9Z24NPBF forms a simple electronic fuse or inrush current limiter. At -12A and up to -55V it can absorb the inrush of large capacitor banks at board insertion. Designers set a target Id and use a sense resistor + op-amp to gate the MOSFET when current exceeds threshold. The 45W power dissipation rating means the part can absorb 25W for a few hundred milliseconds during a fault, sufficient for hot-swap into a 1000uF capacitor bank at -48V. Always check the SOA curve before designing linear-mode circuits.
Recommandé
Audio Amplifier Output Stage (Class-A Bias)
Although uncommon, the IRF9Z24NPBF can be used in a complementary Class-A audio output stage where the P-channel device sources current into the load during the negative half-cycle. Its low Rds(on) of 0.175 ohm ensures low crossover distortion, and the TO-220AB package is easily heatsinked on the chassis of a high-fidelity amplifier. Designers should bias the gate to set the quiescent current (typically 50-200mA per device) and ensure the SOA is not exceeded at low Vds/high Id combinations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRF9Z24NPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRF9Z24N | IRF9540NPBF | NDP6020P | FQP47P06 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | onsemi |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-to-Source Voltage (Vds) | -55 V | -55 V | -100 V | -60 V | -60 V |
| Continuous Drain Current (Id) | -12 A | -12 A | -23 A | -50 A | -47 A |
| Rds(on) max @ Vgs=-10V | 0.175 ohm | 0.175 ohm | 0.20 ohm | 0.040 ohm | 0.026 ohm |
| Power Dissipation (Pd) | 45 W | 45 W | 94 W | 150 W | 120 W |
| RoHS / Lead-Free | Yes (PBF) | No (leaded) | Yes (PBF) | Yes | Yes |
Principaux différenciateurs
- Mature, well-characterized fifth-generation HEXFET silicon (vs Generic P-Channel MOSFETs)
- Lead-free (Pb-free) RoHS-compliant plating (PBF suffix) (vs IRF9Z24N (leaded))
- Higher current handling than -55V P-Channel competitors (vs NDP6020P (onsemi, -60V/-50A))
Notes de conception
Estimated: At Vds=-30V and Id=-12A the IRF9Z24NPBF dissipates P = Vds * Id = 360W momentarily during turn-off of a fully-on state; this far exceeds the 45W continuous rating, so switching must be fast (< 100ns) to stay within SOA. For continuous linear-mode operation (e-fuse, hot-swap), keep dissipation under 25W or use a larger TO-247 package like IRFP4710PBF. Always mount the tab with thermal compound to a heatsink rated at <= 5 C/W for sustained 10W operation.
Through-hole TO-220 mounting requires 1.6 mm or thicker PCB and pad diameters >= 1.7 mm for the three pins. Keep drain trace away from gate-source PCB capacitance to prevent Miller-induced turn-on; route the gate trace as a twisted pair or coax if the gate driver is more than 50 mm from the MOSFET. For high di/dt switching, use a ground plane on the source side and minimize drain-trace loop area to reduce ringing and EMI.
Critical pitfall #1: never drive the gate above the ±20V Vgs rating - use a 16V Zener from gate to source for protection. Critical pitfall #2: the IRF9Z24NPBF body diode has a slow reverse-recovery time (typical for HEXFET), so it is unsuitable for continuous hard-switching above 50 kHz in half-bridge topologies - choose a part with fast body diode (e.g. IRF9Z24N has the same slow diode). Critical pitfall #3: do not block more than -55V; load-dump transients in 24V automotive systems can exceed 60V without a TVS clamp.
Informations de conformité
Lead-free (Pb-free) per PBF suffix and Infineon product page. RoHS compliant. Not AEC-Q100 qualified - for automotive applications requiring qualification, select a Q-grade part. Halogen-free per Infineon declaration.
