IRFS4615TRLPBF - 150V 33A N-Ch MOSFET D2PAK | Infineon
Référence : IRFS4615TRLPBF ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.94 | $94,00 |
| 500 | $0.81 | $405,00 |
| 1 000 | $0.74 | $740,00 |
IRFS4615TRLPBF Présentation
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate a conducting channel between the drain and source terminals. In the system hierarchy, MOSFETs sit under discrete semiconductors and power transistors, and the IRFS4615 belongs to the N-channel enhancement-mode family, the most common configuration for low-side and high-side switching in switched-mode power supplies (SMPS), motor drives, and DC-DC converters. The IR MOSFET™ process used by Infineon combines a planar cell structure with optimized avalanche capability, balancing conduction loss, switching loss, and ruggedness.
Key features include 144 W of maximum power dissipation (PD) at TC, a logic-level-friendly threshold class suitable for 10 V gate drive, low RDS(on) of 42 mΩ maximum for reduced conduction loss, and a total gate charge (Qg) of 26 nC typical that keeps driver loss low in hard-switched topologies. The D2PAK (TO-263) surface-mount package has an exposed metal tab that delivers a low thermal resistance path to a PCB copper pour, enabling compact designs without an external heatsink at moderate dissipation.
Typical applications include primary-side switching in 48 V telecom and industrial DC-DC converters, synchronous rectification on the secondary side, low-voltage motor drives for pumps and fans, and battery protection disconnect switches in 24–72 V e-mobility systems. The 150 V rating provides ample headroom above 48 V telecom rails and standard 24/36 V industrial buses. When designing with this part, pay close attention to PCB copper area, gate-drive loop layout, and avalanche energy under unclamped inductive switching to fully exploit the device's ruggedness.
Alternatives de remplacement direct pour IRFS4615TRLPBF — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IRFS4615TRLPBF
✅ Remplacement direct✓ En stock
$0.74 / unité
Voir la fiche technique →IRFS4310ZTRLPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFS5615TRLPBF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
FDB2572
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
VBL1154N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IRFS4615TRLPBF Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | IR MOSFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TC | 33 A |
| On-Resistance (RDS(on)) max | 42 mΩ |
| Gate Charge (Qg) typical | 26 nC |
| Maximum Power Dissipation (PD) | 144 W at TC |
| Technology | IR MOSFET™ (Planar) |
| Boîtier / Format | D2PAK (TO-263AB), 3 leads + tab |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -55°C to +175°C (TJ) |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (TRLPBF suffix) |
| Packaging | Tape & Reel (TRLPBF) |
| Transistor Polarity | N-Channel |
Configuration des broches de IRFS4615TRLPBF
| Broche 1 | Gate — Gate control input - drive to VGS = 10 V typical for full enhancement |
| Broche 2 | Drain — Drain terminal - internally connected to the metal tab, primary thermal/electrical path |
| Broche 3 | Source — Source terminal - reference for gate drive and main current return |
Applications typiques
IRFS4615TRLPBF convient pour 6 applications: 48 V Telecom DC-DC Converter, Synchronous Rectification (Secondary-Side), Industrial Motor Drive (Low-Voltage), Battery Protection Disconnect (24–72 V Systems), Solar Inverter / MPPT Stage, Automotive 48 V Mild-Hybrid Bus Switch.
48 V Telecom DC-DC Converter
The IRFS4615TRLPBF is well suited as a primary-side switch in 48 V telecom DC-DC converters. Its 150 V VDS rating provides substantial headroom above the nominal 48 V input plus transient spikes, while the 33 A continuous drain current handles full-load conditions in 300–600 W brick converters. The 42 mΩ max RDS(on) keeps conduction loss to a few watts at typical telecom loads, and the 26 nC Qg allows operation at 100–200 kHz switching frequencies without excessive driver loss. Source: Infineon IRFS4615 datasheet, telecom design guides.
Recommandé
Synchronous Rectification (Secondary-Side)
On the secondary side of an isolated DC-DC converter, the IRFS4615TRLPBF can serve as a synchronous rectifier when the rectified rail is below 150 V. Its 33 A rating covers most 12 V/24 V/48 V secondary currents, and the 42 mΩ RDS(on) reduces rectifier loss compared to a Schottky diode at high current. The D2PAK package allows direct PCB mounting with a copper pour acting as both thermal sink and low-impedance source connection, which is critical for synchronous-rectifier efficiency. Source: Infineon IRFS4615 datasheet, SMPS reference designs.
Recommandé
Industrial Motor Drive (Low-Voltage)
For 24–72 V brushless DC or brushed motor drives, the IRFS4615TRLPBF can be used as a low-side or half-bridge switch. The 33 A ID handles motor inrush currents typical of small industrial pumps and fans, while the 150 V rating tolerates back-EMF spikes from inductive loads. The exposed D2PAK tab enables direct bonding to a chassis heatsink or large copper pour, sustaining high duty-cycle PWM operation without thermal runaway. Source: Infineon IRFS4615 datasheet, motor-drive application notes.
Recommandé
Battery Protection Disconnect (24–72 V Systems)
In lithium-ion battery packs for e-mobility, light EVs, and industrial battery systems, the IRFS4615TRLPBF can act as the main disconnect switch. Its 150 V VDS safely exceeds the maximum stack voltage of typical 24 V, 36 V, and 48 V packs, and the 33 A continuous rating covers discharge currents up to several kilowatts. The low 42 mΩ RDS(on) minimizes voltage drop during high-current discharge, preserving usable battery capacity. Source: Infineon IRFS4615 datasheet, battery-management design guides.
Recommandé
Solar Inverter / MPPT Stage
In small off-grid or residential solar inverters, the IRFS4615TRLPBF can switch the MPPT stage where the input rail stays below 150 V. Its 33 A ID handles 2–3 kW MPPT stages at typical 30–60 V PV string voltages, and the 42 mΩ RDS(on) is acceptable for efficiency targets above 96%. The D2PAK package simplifies thermal management via PCB copper, avoiding the cost of an external heatsink in compact inverter designs. Source: Infineon IRFS4615 datasheet, solar inverter design notes.
Recommandé
Automotive 48 V Mild-Hybrid Bus Switch
In 48 V mild-hybrid automotive systems, the IRFS4615TRLPBF can serve as a bus switch or reverse-battery protection element. Its 150 V rating tolerates 48 V load-dump transients beyond ISO 7637-2 expectations, and the 33 A continuous rating covers typical 48 V accessory loads. For full AEC-Q100 qualification, designers should validate against the specific automotive datasheet variant, as this part number is graded for industrial/commercial use. Source: Infineon IRFS4615 datasheet, 48 V automotive design references.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IRFS4615TRLPBF — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IRFS4310ZTRLPBF | IRFS5615TRLPBF | FDB2572 | VBL1154N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Infineon (Chinese design) |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) | D2PAK (TO-263AB) | D2PAK (TO-263AB) | D2PAK (TO-263AB) |
| Drain-Source Voltage (VDS) | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID) | 33 A | 120 A (higher) | 33 A | 33 A | 33 A (claimed) |
| On-Resistance (RDS(on)) max | 42 mΩ | Lower (StrongIRFET) | Similar (~42 mΩ) | Similar (~40 mΩ) | Claimed lower |
| Lead-Free / RoHS | Yes (Pb-free TRLPBF) | Yes | Yes | Yes | Yes (claimed) |
Principaux différenciateurs
- 150 V VDS rating with mature IR MOSFET™ process (vs IRFB3207ZPBF)
- Lower RDS(on) at same voltage class (vs FDB2572 (onsemi))
- Cost-effective proven alternative to StrongIRFET generation (vs IRFS4310ZTRLPBF)
Notes de conception
The D2PAK (TO-263AB) tab is the primary thermal path. At ID = 33 A and RDS(on) = 42 mΩ, estimated conduction loss is P = I² × R = 33² × 0.042 ≈ 46 W (input: ID = 33 A, RDS(on) = 42 mΩ). With θJC in the low single-digit C/W range, this means the PCB copper area under the tab must dissipate the heat. A minimum of 6–10 cm² of 2 oz copper pour on the drain tab is recommended for full-load continuous operation; below this area, derate aggressively. Estimated calculation only - verify against the Infineon thermal derating curves in the datasheet.
Keep the gate-drive loop as small as possible. Place the gate driver IC within 5 mm of the gate pin and use a 10 Ω gate resistor to damp ringing. The source lead (pin 3) carries the full switching current, so its inductance forms the high di/dt loop with the drain - keep this loop area minimal by placing input bypass capacitors (e.g., 1 µF X7R) directly across drain-to-source at the device. Poor layout can cause voltage overshoot beyond the 150 V rating even in a 48 V design.
Do not exceed VGS = ±20 V; the IRFS4615 datasheet gate-oxide absolute-max is ±20 V, so a 12 V or 15 V drive rail is acceptable but 18 V is the practical upper limit. Below VGS(th) (around 2–4 V typical), the device is not fully enhanced and RDS(on) will be much higher than 42 mΩ - never rely on the part to operate as a low-resistance switch at VGS = 5 V. Also, ensure the body diode is rated for the application - the IRFS4615 body-diode reverse recovery may limit use in hard-switched bridges above 50 kHz.
Use multiple thermal vias (0.3 mm diameter, 1 mm pitch) directly under the D2PAK tab to spread heat to inner copper layers. Stitch vias along the entire tab perimeter to provide low-inductance drain connection and improved thermal spreading. Keep source and gate traces on the top layer short and wide to minimize parasitic inductance; route drain to the tab with as wide a copper polygon as the layout allows.
Informations de conformité
Lead-free and RoHS compliant per TRLPBF suffix. Not AEC-Q100 qualified - choose automotive-graded Infineon part variant for automotive designs.
