ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
Référence : ISC0802NLSATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.45 | $3,45 |
| 10 | $3.1 | $31,00 |
| 100 | $2.55 | $255,00 |
| 500 | $2.15 | $1 075,00 |
| 1 000 | $1.8 | $1 800,00 |
ISC0802NLSATMA1 Présentation
An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a positive gate-to-source voltage exceeds its threshold. In modern DC-DC converters, motor drives, and synchronous rectification stages, low-voltage N-MOSFETs of this class form the high-side and low-side switches; their low Rds(on) directly converts into conduction loss, while low gate charge and output capacitance determine switching loss. Within the broader taxonomy, this part belongs to: MOSFET -> transistor -> discrete semiconductor -> power semiconductor.
Key specifications include 100 V VDS, 150 A ID at Tc, 3.6 mOhm maximum Rds(on) at VGS=10 V, and the industry-standard SuperSO8 5x6 footprint with an exposed drain pad for top-side cooling. The OptiMOS 5 process yields improved figure-of-merit (FOM = Rds(on) x Qg) versus older OptiMOS 3 generations, reducing both conduction and switching losses in SMPS, BLDC motor drives, and battery-protection applications. Low Qrr further reduces body-diode reverse-recovery losses in synchronous-rectifier half-bridges.
Typical applications for the ISC0802NLSATMA1 include telecom and server 48 V buck converters, synchronous rectification in isolated DC-DC bricks, battery-management system (BMS) protection FETs in 48 V e-mobility, industrial motor-control half-bridges, and high-current hot-swap OR-ing stages. The wide safety margin between 100 V rating and typical 48 V or 60 V rails provides strong avalanche headroom for inductive switching events.
When designing with this part, pay close attention to gate-drive voltage (10 V recommended for full Rds(on)), PCB layout to minimize source-inductance loop, and thermal management through the exposed pad. Compared with discrete D2PAK parts, the PG-TDSON-8-7 package offers similar current capability in roughly half the PCB area.
Alternatives de remplacement direct pour ISC0802NLSATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec ISC0802NLSATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
ISC0804NLSATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ISC080N10NM6ATMA1
✅ Remplacement direct✓ En stock
$1.05 / unité
Voir la fiche technique →ISC0703NLSATMA1
✅ Remplacement direct✓ En stock
$0.51 / unité
Voir la fiche technique →ISC0802NLSATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Part Number | ISC0802NLSATMA1 |
| FET Type | N-Channel |
| Technology | OptiMOS 5 (Power MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 150 A |
| Continuous Drain Current (ID) at Ta | 22 A |
| RDS(on) max at VGS=10V | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | 2.5 W |
| Power Dissipation (Pd) at Tc | 125 W |
| Plage de température de fonctionnement | -55 C to +175 C |
| Boîtier | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
Configuration des broches de ISC0802NLSATMA1
| Broche 1 | Gate — Gate drive input (10V VGS recommended for full RDS(on)) |
| Broche 2 | Drain — Drain terminal (electrically connected to exposed pad) |
| Broche 3 | Source — Source terminal |
| Broche 4 | Source — Source terminal |
| Broche 5 | Source — Source terminal |
| Broche 6 | Source — Source terminal |
| Broche 7 | Source — Source terminal |
| Broche 8 | Drain — Drain terminal (electrically connected to exposed pad) |
ISC0802NLSATMA1 Zone de fonctionnement sûr (DC, TJ=175C)
Applications typiques
ISC0802NLSATMA1 convient pour 6 applications: 48V Server and Telecom DC-DC Converters, Battery Management System (BMS) Protection FETs, Synchronous Rectification in Isolated DC-DC Brick Converters, Industrial BLDC and PMSM Motor Drives, Hot-Swap and OR-ing Controllers, USB-PD and High-Power Charging Adapters.
48V Server and Telecom DC-DC Converters
The ISC0802NLSATMA1 is purpose-built for 48V input DC-DC converters used in hyperscale data centers and telecom central-office equipment. Its 100V VDS rating provides >60% transient headroom over the nominal 48V bus, while 3.6 mOhm RDS(on) keeps full-load conduction loss below 1.5% at 100A output. In a typical 48V-to-12V bus converter running at 250kHz, two ISC0802NLSATMA1 devices in a synchronous half-bridge deliver peak efficiency above 97%. The PG-TDSON-8-7 footprint also enables high power density on 4-layer FR4 PCBs with heavy 2oz inner copper.
Recommandé
Battery Management System (BMS) Protection FETs
In 48V battery packs for e-mobility, e-bikes, and stationary energy storage, the ISC0802NLSATMA1 serves as a high-current disconnect and protection FET. Its 150A Tc-rated continuous current comfortably handles the 50-100A peak pack currents typical of 1-3kWh Li-ion modules, while the 3.6 mOhm RDS(on) reduces steady-state loss to under 100mV drop during normal discharge. The 100V VDS rating also tolerates inductive transients when the pack relay opens under load. A small TVS across drain-source plus a 100kOhm gate-source resistor provides robust fault protection in automotive-grade BMS designs.
Recommandé
Synchronous Rectification in Isolated DC-DC Brick Converters
The ISC0802NLSATMA1 excels as the synchronous rectifier FET on the secondary side of isolated full-bridge, half-bridge, and forward converters targeting 100W-2kW telecom brick outputs. Its ultra-low Qrr from the OptiMOS 5 process minimizes reverse-recovery losses in hard-switched topologies, while the SuperSO8 5x6 footprint allows tight layout to the output inductor. At 1MHz switching frequency with 30A output, the ISC0802NLSATMA1 typically contributes less than 3% efficiency loss versus the primary-side FETs, making it the benchmark for 48V-bus quarter-brick and eighth-brick modules.
Recommandé
Industrial BLDC and PMSM Motor Drives
In 48V-72V industrial BLDC and PMSM motor drives, the ISC0802NLSATMA1 is used in the three-phase inverter half-bridges driving brushless servos, e-bike traction motors, and small industrial pumps. Its 150A continuous current (Tc) and 3.6 mOhm RDS(on) deliver high torque density at 20-50kHz PWM, while the SuperSO8 package's low package inductance (~1nH) keeps voltage overshoot manageable during commutation. Pairing each ISC0802NLSATMA1 with a dedicated half-bridge gate driver such as the 1ED3124 family enables clean switching and tight dead-time control for sinusoidal FOC algorithms.
Recommandé
Hot-Swap and OR-ing Controllers
For -48V telecom hot-swap and redundant power OR-ing applications, the ISC0802NLSATMA1 is a strong choice when higher inrush capability and lower Rds(on) are required than traditional PowerPAK SO-8 parts provide. Its 100V VDS comfortably handles the -75V transients seen in central-office battery plants, and its 3.6 mOhm RDS(on) reduces conduction loss in steady-state OR-ing to under 0.2W per FET at 7A. The part's avalanche rating allows brief short-circuit events during hot-plug without damage, provided a proper gate slew-rate-controlled driver is used.
Recommandé
USB-PD and High-Power Charging Adapters
The ISC0802NLSATMA1 is increasingly used in 100W-240W USB Power Delivery (USB-PD 3.1 EPR) adapters where the 28V/36V/48V PPS outputs require a 100V-rated synchronous rectifier FET. Its 3.6 mOhm RDS(on) and low Qg (approximately 30nC) enable >96% efficiency at 240W output with minimal heatsinking. Designers can pair it with quasi-resonant flyback controllers or active-clamp forward controllers from Infineon, leveraging the OptiMOS 5 process's soft body-diode recovery to meet strict EMI standards without additional snubber circuitry.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ISC0802NLSATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | ISC0804NLSATMA1 | ISC080N10NM6ATMA1 | ISC0703NLSATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) | PG-TDSON-8-7 (same) |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 100 V | 75 V |
| Continuous Drain Current (Tc) | 150 A | 150 A | 150 A | 150 A |
| RDS(on) max at VGS=10V | 3.6 mOhm | ~4.5 mOhm (higher) | ~3.3 mOhm (lower) | ~3.0 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
| Power Dissipation (Tc) | 125 W | 125 W | 125 W | 125 W |
| Unit Price (1-pc, USD) | 3.45 | lower (typically ~$3.20) | higher (typically ~$4.50) | similar (~$3.30) |
| Availability (as of 2026-09-13) | In Stock at DigiKey/Mouser/LCSC | In Stock | In Stock | In Stock (Site MPN) |
Principaux différenciateurs
- Industry-leading 3.6 mOhm RDS(on) at 100V VDS in PG-TDSON-8-7 footprint (vs ISC0804NLSATMA1)
- OptiMOS 5 process delivers best-in-class figure-of-merit for 100V applications (vs ISC080N10NM6ATMA1)
- 100V VDS rating provides significantly more transient headroom over 75V alternative (vs ISC0703NLSATMA1)
Notes de conception
Estimated: At full 150A Tc continuous current and 3.6 mOhm RDS(on), conduction loss is approximately 81W, requiring substantial copper cooling. The PG-TDSON-8-7 package's exposed drain pad must be soldered to at least 1 square inch (645 mm^2) of 2oz copper on the top layer, with thermal vias to inner copper layers, to keep junction-to-ambient thermal resistance below 50 C/W. Without this, the device will thermally limit well before reaching rated current. In multi-MOSFET parallel configurations, ensure symmetric PCB layout and a common gate-drive resistor to prevent current imbalance and thermal runaway.
Keep the high-current drain-source loop area to an absolute minimum to control parasitic inductance, which can cause dangerous VDS overshoot during switching transitions. Place the gate driver as close as possible to the gate pin (pin 1), and route the gate trace over a continuous ground plane to minimize gate-loop inductance below 5 nH. Use a 10-22 Ohm gate-drive resistor to control dV/dt and dampen any ringing between the MOSFET's Cgs and the source-lead inductance. Failure to manage source inductance can cause spurious turn-on via the Miller effect.
Route the high-di/dt switching node (drain-to-source loop) on one PCB layer only, sandwiched between ground planes, to minimize EMI emissions. For SuperSO8 layouts, the standard reference land pattern is approximately 5.0 x 6.0 mm with a large center thermal pad (approximately 3.0 x 4.5 mm) and a 5x5 array of 0.3mm thermal vias. Avoid running sensitive analog signals directly under the switching node, and provide stitching vias around the periphery of the high-current copper pour to suppress edge-field radiation.
Common pitfalls with the ISC0802NLSATMA1 include: (1) driving the gate with insufficient voltage (below 8V) which raises RDS(on) by 2-3x and causes overheating; (2) omitting a gate-source pull-down resistor, leaving the gate floating during controller start-up and risking partial turn-on with high loss; (3) using a single FET for high-side switching without a bootstrap or charge-pump supply, since VGS(th) of approximately 2-3V means a 12V gate drive is the practical minimum; (4) exceeding VDS during avalanche by not clamping inductive loads with a TVS or RC snubber.
Informations de conformité
RoHS and REACH compliant per Infineon product environmental compliance. Not AEC-Q100/AEC-Q101 qualified - for automotive AEC-Q101 applications, refer to Infineon's automotive-grade OptiMOS portfolio. Matte-tin plating, lead-free reflow compatible up to 260 C peak.
