ISL80030AFRZ-T - 3A Sync Buck Converter 2.7-5.5V 2MHz DFN-8 | Renesas
Référence : ISL80030AFRZ-T ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.88 | $0,88 |
| 10 | $0.78 | $7,80 |
| 100 | $0.69 | $69,00 |
| 500 | $0.59 | $295,00 |
| 1 000 | $0.51 | $510,00 |
ISL80030AFRZ-T Présentation
Alternatives de remplacement direct pour ISL80030AFRZ-T — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
ISL80030FRZ-T
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ISL80030AFRZ-T7A
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ISL80031AFRZ-T
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ISL80031AFRZ-T7A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
TPS62823DLCR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
ISL80030AFRZ-T Valeurs maximales et caractéristiques électriques
| Topologie | Synchronous Buck (Step-Down) |
| Plage de tension d'entrée | 2.7 V to 5.5 V |
| Plage de tension de sortie | 0.6 V to VIN (Adjustable) |
| Continuous Output Current | 3 A |
| Fréquence de commutation | 2 MHz (typ) |
| Control Architecture | Peak Current Mode PWM |
| High-Side MOSFET Type | PMOS (no boot capacitor required) |
| Low-Side MOSFET | Synchronous NMOS |
| Maximum Duty Cycle | 100% (low-dropout capable) |
| Feedback Voltage Accuracy | ±1% (typ) |
| Light-Load Operation (this variant) | Forced PWM across full load |
| Température de jonction en fonctionnement | -40 °C to +125 °C |
| Boîtier | 8-pin DFN 2 mm × 2 mm with exposed pad (FRZ) |
| Package Outline | 2.0 mm × 2.0 mm × 0.9 mm |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant (Pb-free) |
| External Component Count | L, C_IN, C_OUT, feedback resistors |
Configuration des broches de ISL80030AFRZ-T
| Broche 1 | EN — Enable input (active high, logic-level) |
| Broche 2 | VIN — Input supply voltage (2.7 V to 5.5 V) |
| Broche 3 | GND — Analog ground |
| Broche 4 | FB — Feedback voltage input (0.6 V reference) |
| Broche 5 | AGND — Analog ground return for internal references |
| Broche 6 | PGND — Power ground for low-side MOSFET |
| Broche 7 | SW — Switch node to external inductor |
| Broche 8 | LX — Switch node (tied to SW externally for layout flexibility) |
| Broche EP | EPAD — Exposed thermal pad - must be soldered to GND copper for thermal performance |
Applications typiques
ISL80030AFRZ-T convient pour 6 applications: FPGA / SoC Core-Rail Point-of-Load, Portable Battery-Powered Devices, 5 V to 1.8 V / 1.2 V Logic Rail Conversion, Solid-State Drive (SSD) Power Management, IoT Edge Sensor Hubs, Industrial Control / Test Equipment.
FPGA / SoC Core-Rail Point-of-Load
The ISL80030AFRZ-T is well-suited as a 1.0 V to 1.8 V point-of-load supply for FPGA or SoC core rails from a 3.3 V or 5 V system rail. Its 3 A continuous current and 2 MHz switching frequency keep the converter footprint under 64 mm² while providing fast load-step response for processor bursts. Peak current-mode control and ±1% feedback accuracy support tight core-rail voltage tolerance, and the high PSRR rejects upstream switching noise that would otherwise couple into sensitive digital logic. The exposed pad provides a low thermal path so the converter can deliver full 3 A at modest VIN-VOUT differentials without external heatsinking.
Recommandé
Portable Battery-Powered Devices
The ISL80030AFRZ-T is ideal for portable, battery-powered products drawing from a single-cell Li-ion or USB 5 V supply. Its 2.7 V to 5.5 V input range covers the entire discharge curve of a Li-ion cell, while forced-PWM operation across the full load range produces predictable, low-noise output for downstream analog and RF sections. The synchronous PMOS high-side switch eliminates the boot capacitor and reduces external parts, critical for sub-50 mm² PCB assemblies. Quiescent current in the low-microamp range during shutdown preserves battery life when the host is in standby.
Recommandé
5 V to 1.8 V / 1.2 V Logic Rail Conversion
The ISL80030AFRZ-T efficiently steps a 5 V rail down to 1.8 V or 1.2 V logic levels for memory, image sensors, or display drivers. At a 5 V to 1.8 V conversion, efficiency peaks around 90% at 1 A load with a 1 µH chip inductor, and remains above 80% even at full 3 A. The 2 MHz switching frequency pushes harmonic energy above the AM band, simplifying EMI compliance for consumer audio/video products. The 100% duty-cycle capability also supports low-dropout operation for battery-discharge scenarios near the end of life.
Recommandé
Solid-State Drive (SSD) Power Management
The ISL80030AFRZ-T delivers clean, low-ripple power to SSD controller and NAND flash rails in space-constrained M.2 or mSATA form factors. The 8-pin 2 mm × 2 mm DFN occupies minimal PCB area, and the high switching frequency allows the entire converter to fit alongside the controller IC. Forced-PWM operation eliminates low-frequency PFM tones that could couple into sensitive analog blocks, while the exposed thermal pad supports continuous 3 A loading required by high-performance NAND during write bursts. The device's wide input range accommodates the 3.3 V rail typical in SSD designs.
Recommandé
IoT Edge Sensor Hubs
The ISL80030AFRZ-T powers IoT edge sensor hubs that aggregate data from multiple low-power sensors and forward via Wi-Fi or Bluetooth. The 3 A capability supports short transmission bursts when the radio is active, while the low quiescent current in shutdown preserves battery life during sleep intervals. The wide input voltage accepts energy-harvesting or solar-derived inputs, and the small DFN footprint supports the miniaturized PCB layouts typical of wearable and industrial-sensor form factors. Forced PWM keeps the output spectrum predictable so that conducted emissions can be filtered with simple pi-network LC stages.
Recommandé
Industrial Control / Test Equipment
The ISL80030AFRZ-T is suitable for industrial control boards and bench-top test equipment that need a small, robust, point-of-load supply. The -40 °C to +125 °C junction-temperature rating supports deployment in uncontrolled-temperature enclosures, and the exposed-pad DFN package delivers reliable thermal performance when soldered to industrial-thickness copper. Forced-PWM operation produces a fixed switching frequency that simplifies conducted-EMI filter design for CE/UL compliance, while the peak current-mode control provides robust line-step rejection for industrial 24 V-bus applications fed through an intermediate 5 V regulator.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour ISL80030AFRZ-T — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | ISL80030FRZ-T | ISL80031AFRZ-T | TPS62823DLCR | MCP16311T-E/MS |
|---|---|---|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Texas Instruments | Microchip Technology |
| Package | 8-DFN 2x2 with EP | 8-DFN 2x2 with EP - same | 8-DFN 2x2 with EP - same | 8-DFN 2x2 with EP - same | 8-MSOP - different |
| Input Voltage Range | 2.7 V to 5.5 V | 2.7 V to 5.5 V | 2.7 V to 5.5 V | 2.7 V to 5.5 V | 2.7 V to 5.5 V |
| Continuous Output Current | 3 A | 3 A | 3 A | 3 A | 3 A |
| Switching Frequency | 2 MHz | 2 MHz | 2 MHz | 2 MHz | 1 MHz |
| Light-Load Operation | Forced PWM | Forced PWM | Auto PFM/PWM | Auto PFM/PWM | Auto PFM/PWM |
| Boot Capacitor Required | No (PMOS high-side) | No | No | No | No |
| Operating Junction Temperature | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C |
Principaux différenciateurs
- Boot-capacitor-free PMOS high-side architecture (vs Generic NMOS-high-side buck (e.g. TPS5430))
- Forced PWM across full load (vs ISL80031AFRZ-T (auto PFM/PWM))
- Compact 2 mm × 2 mm DFN with exposed thermal pad (vs Larger 3 mm × 3 mm or SOIC-8 buck converters)
Notes de conception
Estimated: at VIN = 5 V, VOUT = 1.8 V, and IOUT = 2 A, conduction loss in the high-side PMOS plus low-side NMOS pair is roughly 4.5 V × 2 A × (1 - 0.90) ≈ 1.0 W. With the exposed pad soldered to a 25 mm² ground copper pour, the 8-DFN achieves approximately 50 °C/W junction-to-ambient, so the temperature rise above ambient is about 50 °C. Below 60 °C ambient this stays well inside the 125 °C junction rating, but at 85 °C ambient ensure the copper pour is at least 50 mm² or attach a small heatsink for continuous 3 A operation.
Place the input ceramic capacitor (10 µF X7R 6.3 V minimum) within 2 mm of the VIN and PGND pins to minimize switching-node ringing. Route the SW/LX trace as a short, wide path on the top layer directly to the inductor, with the output capacitor return tied to PGND with a wide via array. The exposed pad must be soldered to a continuous ground copper pour with at least four thermal vias to the inner ground plane to meet the rated thermal performance.
Do not apply input voltage above 5.5 V - the internal MOSFETs have a 6 V abs-max rating with no avalanche headroom. Avoid reversing the FB divider polarity or using divider resistors above 100 kΩ, as the FB pin input bias current (~50 nA) will introduce a measurable output-voltage error. Do not operate without the inductor; an open SW node forces the high-side PMOS into 100% duty cycle and can overheat the die. Do not enable the device with VOUT pre-biased above 0.6 V without confirming the monotonic-startup behavior matches the datasheet's pre-bias startup description.
Forced-PWM operation produces a fixed 2 MHz fundamental and its harmonics, so a small pi-network (10 µF + ferrite bead + 10 µF) on the input suppresses conducted EMI back into the upstream rail. Place the ferrite bead between the upstream 5 V source and the local input capacitor. The output ripple is typically below 10 mV peak-to-peak with a 22 µF X7R output capacitor; for noise-sensitive analog loads add a second-stage LC filter (10 µH + 22 µF) to drop ripple below 2 mV.
Informations de conformité
Pb-free DFN package per Renesas product page; AEC-Q100 not qualified on this part number; consult factory for halogen-free confirmation.
