H58G66CK8BX147N - 8GB LPDDR5X-8533 DRAM FBGA-315 | SK hynix
Référence : H58G66CK8BX147N ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $42.5 | $42,50 |
| 10 | $40.8 | $408,00 |
| 100 | $38.9 | $3 890,00 |
| 500 | $36.75 | $18 375,00 |
| 1 000 | $34.6 | $34 600,00 |
H58G66CK8BX147N Présentation
LPDDR5X (Low Power Double Data Rate 5X) is the extended-speed evolution of the LPDDR5 standard defined by JEDEC. As a class of synchronous dynamic random-access memory, LPDDR devices prioritize power efficiency and bandwidth-per-watt over the absolute latency of desktop DDR, placing them in the memory IC hierarchy: SDRAM -> DDR SDRAM -> LPDDR family -> LPDDR5/LPDDR5X. LPDDR5X raises signaling rates beyond the 6400 Mbps of LPDDR5 while retaining the low-voltage 1.05 V-class core supply, making it the dominant memory type for flagship smartphones, AI edge accelerators, and automotive infotainment.
Key features of the H58G66CK8BX147N include its 64Gb density in a single monolithic die-class package, an x8 I/O organization suited to 64-bit bus designs using eight devices, LPDDR5X-8533 operation for maximum bandwidth, and dynamic voltage/frequency scaling inherited from the LPDDR5 architecture. Deep power-down and per-bank refresh modes minimize standby current in battery-operated systems.
Technically, the device is specified in SK hynix 315-ball FBGA documentation, which defines requirements for JEDEC-compliant x16 and x8 single-channel SDRAM devices. Bank groups, burst lengths, and DVFSC/DVFSQ operation follow the LPDDR5 JEDEC protocol, with the X-speed bin extending CAS latency tables for 8533 Mbps operation.
Typical applications include flagship smartphone SoC memory, AI edge computing modules, tablet and notebook DRAM-down designs, and automotive ADAS compute platforms where memory bandwidth per watt is the limiting factor.
Designers should pay close attention to fly-by command/address routing, on-die termination settings, and controller training algorithms, since LPDDR5X at 8533 Mbps leaves minimal timing margin; silicon-proven controller support and re-training routines are essential.
This page synthesizes distributor availability data, the SK hynix FBGA specification PDF, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour H58G66CK8BX147N — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H58G66CK8BX147N (même facteur de forme et même empreinte) — différant par Memory Type, Organization, Density, Package, Application Domain.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H58G66CK8BX147
✅ Remplacement direct✓ En stock
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Voir la fiche technique →H58G56AK6QX032N
✅ Remplacement direct✓ En stock
$13.4 / unité
Voir la fiche technique →H58G56AK6QX032
✅ Remplacement direct✓ En stock
$20.6 / unité
Voir la fiche technique →H58G46AK6QX033
✅ Remplacement direct✓ En stock
$9.75 / unité
Voir la fiche technique →H58G46AK6PX033N
✅ Remplacement direct✓ En stock
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Voir la fiche technique →MT62F3G32D8DV-023
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$55.7 / unité
Voir la fiche technique →MT53E2G64D8TN-046
✅ Remplacement direct✓ En stock
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Voir la fiche technique →H58G66CK8BX147N Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR5X SDRAM |
| Density | 64 Gbit (8 GB) |
| Organisation de la mémoire | x8 (single channel) |
| Maximum Data Rate | 8533 Mbps |
| Supply Voltage Domain | 0.5 V to 1.8 V |
| Core Voltage Class | 1.05 V (LPDDR5/LPDDR5X class) |
| Boîtier | 315-ball FBGA |
| Type de montage | Surface Mount |
| Standard Compliance | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) |
| Interface | LPDDR5/LPDDR5X protocol |
| Channel Configuration | Single channel (x8 or x16 capable family) |
| Power Management | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) |
| Application Domain | Smartphone, AI edge, server-class mobile computing |
| Refresh Scheme | LPDDR5 per-bank / all-bank refresh |
Guide de configuration des broches du H58G66CK8BX147N 315-ball fbga
Configuration des broches du H58G66CK8BX147N (boîtier 315-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H58G66CK8BX147N.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H58G66CK8BX147N convient pour 6 applications: Flagship Smartphone DRAM, AI Edge Computing Modules, Tablet and Notebook DRAM-Down Memory, Automotive ADAS and Cockpit Compute, 5G Networking and Edge Servers, AR/VR and Wearable Headsets.
Flagship Smartphone DRAM
Flagship smartphones pair high-core-count SoCs with 8GB to 18GB of LPDDR5/5X memory, and the H58G66CK8BX147N directly serves this market with 8GB per package at up to 8533 Mbps. Its x8 organization allows an eight-device, 64-bit bus that delivers peak bandwidth above 68 GB/s, enough to feed 4K camera pipelines, on-device large-language-model inference, and high-refresh displays simultaneously. The 0.5 V I/O domain and DVFSC/DVFSQ dynamic voltage-frequency scaling cut idle and active power, extending battery life where DRAM is a top-three power consumer. Place devices on a fly-by CA bus with on-die termination enabled and follow controller training routines for X speed bins.
Recommandé
AI Edge Computing Modules
Edge AI accelerators for vision, robotics, and on-device generative models are bandwidth-starved, and the H58G66CK8BX147N addresses this with LPDDR5X-8533 signaling. At 8533 Mbps on a x8 device, an eight-chip bank provides the tens of GB/s that transformer and CNN workloads demand, while the 1.05 V-class core keeps energy per bit low for fanless enclosures. Typical deployments place four to eight packages around an NPU SoC on tightly length-matched fly-by routing. Because 8533 Mbps operation leaves little timing margin, designers should budget controller re-training across temperature and validate signal integrity on 8-layer or better stackups with solid VDDQ planes.
Recommandé
Tablet and Notebook DRAM-Down Memory
Thin tablets and fanless notebooks use DRAM-down LPDDR5X soldered on the main board instead of SO-DIMM modules to save z-height and power. The 8GB H58G66CK8BX147N lets a two-package configuration reach 16GB with a 128-bit or split bus, achieving desktop-class memory bandwidth for productivity and content-creation workloads at LPDDR5X power levels. DVFSC/DVFSQ lets the platform drop to low-voltage states during light use, important for always-on PCs. Layout practice: use per-byte differential DQS pairs, keep CA stubs short with fly-by topology, and follow the SK hynix 315-ball FBGA specification for ball assignment and decoupling recommendations.
Recommandé
Automotive ADAS and Cockpit Compute
ADAS domain controllers and digital cockpits fuse multi-camera sensor input with AI perception, requiring memory bandwidth that only LPDDR5X-class DRAM provides in the power envelope of a vehicle. The H58G66CK8BX147N supplies 8GB per package at up to 8533 Mbps, allowing sensor-frame buffers and neural-network weight storage without switching to power-hungry GDDR. Thermal design is decisive: cabin electronics see -40C to +105C ambient extremes, so derate speed bins at temperature and confirm the appropriate qualification level with SK hynix. XAIPART recommends verifying the automotive qualification suffix or applying system-level functional-safety measures before deployment in safety-critical paths.
Recommandé
5G Networking and Edge Servers
5G small-cell basebands, RAN accelerators, and edge servers increasingly adopt LPDDR5X as main memory where DIMM slots are absent. The H58G66CK8BX147N offers a JEDEC-compliant, single-channel x8 device that scales to multi-package banks, delivering the random-access bandwidth for packet processing, MACsec, and lightweight AI inference at the network edge. Its LPDDR5X-8533 rate sustains line-rate forwarding with headroom for telemetry. Designers should implement per-bank refresh scheduling to bound worst-case latency for deterministic networking and use the deep power-down modes in standby paths. Verify memory-controller support for X speed bins and ECC-over-run schemes in the target SoC before layout freeze.
Recommandé
AR/VR and Wearable Headsets
Standalone AR and VR headsets render dual high-resolution displays at 90-120 Hz while running inside-out tracking, making memory bandwidth the primary bottleneck. The H58G66CK8BX147N provides 8GB of LPDDR5X at up to 8533 Mbps, enough to sustain simultaneous display composition and pose-estimation pipelines within the strict thermal budget of a head-worn device. The 0.5 V I/O domain minimizes trace switching power, and DVFSC allows graceful bandwidth-power trade-offs during less demanding scenes. Use short, tightly matched fly-by routing on flex-rigid boards and enable controller refresh-aware scheduling to prevent frame drops during refresh bursts at high operating temperatures.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H58G66CK8BX147N — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H58G66CK8BX147 | H58G56AK6QX032N | MT62F3G32D8DV-023 |
|---|---|---|---|---|
| Package | 315-ball FBGA | 315-ball FBGA - same | 315-ball FBGA - same family | FBGA LPDDR5X ball map - verify variant |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 64 Gbit (8 GB) | 64 Gbit (8 GB) | Lower LPDDR5-class density | Multi-die aggregate (24 Gbit-class x32 package) |
| Memory Standard | LPDDR5X | LPDDR5X | LPDDR5 | LPDDR5X |
| Maximum Data Rate | 8533 Mbps | 8533 Mbps | LPDDR5-class (up to 6400 Mbps) | 8533 Mbps-class (-023 speed bin) |
| JEDEC Compliance | Yes (single-channel x8/x16 per FBGA spec) | Yes | Yes (LPDDR5) | Yes (LPDDR5X) |
Principaux différenciateurs
- LPDDR5X-8533 speed grade (vs H58G56AK6QX032N)
- Full 8GB density per package (vs H58G46AK6QX033)
- Single-channel JEDEC x8 simplicity (vs MT62F3G32D8DV-023)
Notes de conception
At 8533 Mbps, LPDDR5X trace budgets are extremely tight. Route CA and DQ on fly-by/point-to-point topologies with length matching within a few mils per byte lane, reference DQ routing to a continuous VDDQ plane, and use on-die termination (ODT) settings from the SK hynix 315-ball FBGA specification. Simulate eye diagrams at the X speed bin across corner temperature, and plan for controller re-training routines because 8533 Mbps operation typically requires periodic training updates in the field.
The device spans 0.5 V to 1.8 V supply domains: a 1.05 V-class core (VDD2/VDD1) and a ~0.5 V VDDQ. Provide independent, low-noise DC-DC rails with fast transient response, since LPDDR5X load current can step between deep power-down and full-bandwidth bursts in microseconds. Use DVFSC/DVFSQ to trade bandwidth for power dynamically, but sequence voltage changes per the JEDEC LPDDR5 protocol - never scale rails independently of controller commands.
Decouple each FBGA-315 package with multiple 100 nF ceramic capacitors on VDDQ plus bulk capacitance near the PMIC, placed within 2 mm of the ball field. Keep the DRAM within approximately 50 mm of the SoC at 8533 Mbps; longer routes force lower speed bins. Follow the ball assignment in the H58G66CK8BX147 specification exactly - LPDDR5 ball maps are not interchangeable with LPDDR4 footprints, and a mis-mapped CA/DQ net will fail training irrecoverably.
Informations de conformité
Compliance data not stated in provided sources; JEDEC-compliant protocol per SK hynix 315-ball FBGA specification. Automotive AEC-Q100 qualification not indicated in available data.