M25PE10-VMN3TPB - 1Mb SPI NOR Flash 75MHz AEC-Q100 | Micron
Référence : M25PE10-VMN3TPB ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.2 | $1,20 |
| 10 | $1.08 | $10,80 |
| 100 | $0.96 | $96,00 |
| 500 | $0.84 | $420,00 |
| 1 000 | $0.75 | $750,00 |
M25PE10-VMN3TPB Présentation
Serial NOR flash is a category of non-volatile semiconductor memory that stores data in NOR-type floating-gate cells and communicates over a serial peripheral interface (SPI). In the memory hierarchy it sits under flash memory and non-volatile memory ICs, alongside parallel NOR, NAND flash and serial EEPROM, and is commonly used for code storage (XIP boot firmware) and parameter data logging in embedded systems.
Key features of the M25PE10 include 1 Mbit density organized as 128K x 8, SPI clock operation up to 75 MHz for fast code fetch, page programming of 1 to 256 bytes per Page Write or Page Program instruction, and sector erase architecture with a write cycle time of 3 ms per page and 15 ms for word-level operations. The device operates from a 3V/3.3V supply rail, which suits 3.3V microcontroller systems.
Technically, the M25PE10 differs from standard pure serial NOR devices in that it is a paged flash with a RAM-like page buffer, enabling flexible byte-level modification within a 256-byte page without erasing, in addition to conventional sector erase and page program instructions. Hardware write protection and hold functions are supported on dedicated pins, improving boot-code integrity in automotive and industrial environments.
Typical applications include automotive electronics modules requiring AEC-Q100-qualified storage, industrial control systems storing firmware and calibration data, and consumer devices needing reliable non-volatile parameter memory. The 8-SOIC footprint keeps board area small while remaining hand-solderable for prototyping.
Design consideration: note that this device is listed as obsolete, so new designs should plan a second-source or migration path, and existing designs should secure last-time-buy inventory. Verify SPI mode (mode 0/3) compatibility and hold-pin behavior when substituting other 8-SOIC SPI flash.
This page synthesizes distributor listings, cross-reference guides and practical design notes - including drop-in alternative analysis and obsolescence guidance - not found on the manufacturer product page alone.
Alternatives de remplacement direct pour M25PE10-VMN3TPB — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec M25PE10-VMN3TPB (même facteur de forme et même empreinte) — différant par Memory Size, Memory Type, Package, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
M25PE10-VMN6P
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
M25PE20-VMN6TPB
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
M25PE40-VMN6TPB
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
M25P10-AVMN6P
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
M25PE20-VMN3TPB
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
M25PE10-VMN3TPB Valeurs maximales et caractéristiques électriques
| Type de mémoire | FLASH - NOR (serial paged) |
| Taille de mémoire | 1 Mbit (128K x 8) |
| Interface | SPI |
| Clock Frequency | 75 MHz |
| Tension d'alimentation | 3V/3.3V |
| Write Cycle Time - Page | 3 ms |
| Write Cycle Time - Word | 15 ms |
| Boîtier | 8-SOIC (SO-8) |
| Type de montage | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Qualification | Automotive AEC-Q100 |
| Part Status | Obsolete |
| Programming Granularity | 1 to 256 bytes per Page Write / Page Program |
| Catégorie | Memory chips - Flash |
Configuration des broches de M25PE10-VMN3TPB
| Broche 1 | /S (CS#) — Chip Select input, active low |
| Broche 2 | Q (DO) — Serial Data Output (MISO) |
| Broche 3 | /W (WP#) — Write Protect input, active low |
| Broche 4 | VSS (GND) — Ground |
| Broche 5 | D (DI) — Serial Data Input (MOSI) |
| Broche 6 | C (CLK) — Serial Clock input, up to 75 MHz |
| Broche 7 | /HOLD — Hold input, pauses serial communication, active low |
| Broche 8 | VCC — Power supply, 3V/3.3V |
Applications typiques
M25PE10-VMN3TPB convient pour 6 applications: Automotive ECU Firmware Storage, Industrial Control Systems, Consumer Electronics Parameter Memory, Code Shadowing (XIP) for Embedded Processors, Data Logging and Event Recorders, FPGA Configuration Storage.
Automotive ECU Firmware Storage
The M25PE10-VMN3TPB is AEC-Q100 qualified in the 3V/3.3V class, making it purpose-built for storing boot code, calibration tables and diagnostic data in automotive ECUs. Its 75 MHz SPI clock supports fast code shadowing to RAM at startup, while the 256-byte paged architecture allows byte-granular updates of calibration and learned parameters without full sector erase cycles. Hardware WP# pin protection guards boot blocks against corruption during brownout or fault conditions. Used as the non-volatile boot device behind a 3.3V microcontroller SPI bus with /CS tied to a GPIO, it adds minimal board overhead in 8-SOIC. Because the part is obsolete, automotive programs should secure last-time-buy stock and schedule re-qualification to a current SPI NOR family before the next platform refresh.
Recommandé
Industrial Control Systems
In PLCs, motor drives and factory automation controllers, the M25PE10-VMN3TPB stores firmware images, parameter sets and event logs. The 1 Mbit (128K x 8) density is sufficient for bootloader plus configuration data, and the SPI interface up to 75 MHz minimizes boot latency compared with lower-speed EEPROM. Its paged write capability (1-256 bytes per Page Program, 3 ms page write) enables frequent, wear-friendly logging of counters and setpoints without dedicating large erase blocks. The 3.3V supply matches standard industrial logic rails, and the 8-SOIC package suits dense control boards. Industrial users should verify SPI mode compatibility when migrating, since the device supports standard SPI clock polarities; the obsolete status means new industrial designs should instead specify active 1-8 Mbit SPI NOR equivalents with equivalent page-program flexibility.
Recommandé
Consumer Electronics Parameter Memory
Set-top boxes, appliances and audio products use the M25PE10-VMN3TPB to hold user settings, firmware bootstrap code and manufacturing data. The 3V/3.3V operation integrates directly with mainstream consumer SoCs, and the 8-SOIC footprint keeps BOM cost and board area low for cost-sensitive products. Page Write operations of 1 to 256 bytes let the host update single configuration bytes on demand, and the 15 ms word write / 3 ms page write timings keep user-perceived save latency negligible. The HOLD# pin suspends serial communication without releasing the bus, useful when an interrupt needs the SPI controller mid-transaction. As the part is obsolete, consumer designs in development should qualify an active SPI NOR on the same 8-SOIC footprint; the pin-compatible migration typically requires only instruction-set verification in firmware.
Recommandé
Code Shadowing (XIP) for Embedded Processors
The 75 MHz SPI clock of the M25PE10-VMN3TPB enables rapid sequential reads for execute-in-place boot or shadow-then-execute schemes on microcontrollers and FPGAs without dedicated parallel flash. At 75 MHz, the theoretical sequential read throughput reaches 9.4 MB/s, allowing a full 128 KB image transfer in roughly 14 ms - fast enough for power-on boot sequences in printers, meters and networking peripherals. The 3.3V rail aligns with common FPGA banks and MCU VDD. Designers should account for trace length and loading on CLK/DI/DO at full clock rate; short SPI stubs under a few centimeters generally support 75 MHz without termination. For designs needing higher sustained fetch bandwidth, modern quad-I/O SPI NOR parts provide 4x the throughput on the same small footprint.
Recommandé
Data Logging and Event Recorders
The paged architecture of the M25PE10-VMN3TPB suits event and fault recorders: the 256-byte page buffer permits rewriting individual records within a page, while sector erase refreshes log regions periodically. With a 3 ms page write time, a logger can commit frequent snapshots without stalling the host MCU for tens of milliseconds, and the AEC-Q100 automotive grade supports under-hood and in-cabin logging modules. A typical topology connects the device as the sole SPI slave with WP# driven by a supervisor to freeze logs during supply anomalies. Capacity planning matters: 1 Mbit holds roughly 128 KB - adequate for thousands of fixed-length event records but limited for high-rate waveform logging, where higher-density SPI NOR or NAND is preferable. Verify endurance cycling strategy against the datasheet erase/program limits in the official datasheet.
Recommandé
FPGA Configuration Storage
Small FPGAs and CPLDs frequently boot from serial SPI flash, and the M25PE10-VMN3TPB's 1 Mbit density plus 75 MHz read speed matches compact configuration bitstreams in the 128 KB class. The 3.3V supply and 8-SOIC package integrate cleanly next to the FPGA on cost-optimized boards, and the standard SPI pinout means the same layout serves successor devices. Configurations load via the FPGA's master-serial mode with the flash DO connected to the FPGA data-in pin and CLK generated by the FPGA. Because 1 Mbit is tight - many modern FPGAs need 4-32 Mbit - this device suits legacy or very small designs; new FPGA boards should specify higher-density SPI NOR from the MT25Q family with dual/quad read for faster configuration times and ample growth margin.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour M25PE10-VMN3TPB — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | M25PE10-VMN6P | M25PE20-VMN6TPB | M25PE40-VMN6TPB | M25P10-AVMN6P | M25PE20-VMN3TPB |
|---|---|---|---|---|---|---|
| Package | 8-SOIC (SO-8) | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same | 8-SOIC (SO-8) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 2 Mbit (256K x 8) | 4 Mbit | 1 Mbit (128K x 8) | 2 Mbit (256K x 8) |
| SPI Clock Frequency | 75 MHz | 75 MHz | 75 MHz | 75 MHz | 75 MHz | 75 MHz |
| Architecture | Paged flash with page buffer (byte rewrite) | Paged flash - same | Paged flash - same | Paged flash - same | Standard serial NOR (no byte rewrite) | Paged flash - same |
| Supply Voltage Class | 3V/3.3V | 3V/3.3V | 3V/3.3V | 3V/3.3V | 3V/3.3V | 3V/3.3V |
| Temperature Grade | Automotive AEC-Q100 | Industrial grade | Industrial grade | Industrial grade | Industrial grade | Automotive AEC-Q100 |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Principaux différenciateurs
- Automotive AEC-Q100 qualification (vs M25PE10-VMN6P)
- Paged architecture with byte-level rewrite (vs M25P10-AVMN6P)
- Higher density headroom on identical footprint (vs M25PE20-VMN6TPB)
Notes de conception
The M25PE10-VMN3TPB is obsolete. Any new or continuing design must define a migration path: Micron and Renesas published an official 'Conversion Guide Micron EOL M25P Products' pointing to Adesto (Renesas) FUSION and standard flash as substitutes for low-density Micron serial NOR. Before qualifying any replacement, verify instruction opcodes, 256-byte page size, sector erase commands and HOLD#/WP# polarity in firmware - subtle opcode differences are the most common cause of failed drop-in migrations.
At the 75 MHz maximum SPI clock, keep the CLK, DI and DO traces short (a few centimeters) with a solid ground return; at this frequency, unterminated long stubs can cause ringing and marginal setup/hold timing at the host. Series termination of 22-33 ohms on CLK near the driver is a common practice for SPI buses over 50 MHz. Ensure /CS is pulled up so the device stays deselected during power-up, and verify the host supports SPI mode 0/mode 3 as required by the datasheet.
Place a 100 nF ceramic decoupling capacitor directly across VCC (pin 8) and VSS (pin 4), within a few millimeters of the package, to supply the transient current of page program and sector erase cycles. Program/erase operations draw burst currents far above the read-state consumption, and an inadequate decoupling network can cause brownout-induced write corruption. Tie WP# high through a resistor for normal operation and drive it low only for hardware write protection of protected blocks.
Informations de conformité
Automotive AEC-Q100 qualification stated in the datasheets.com verified listing ('automotive aec-q100 8-pin soic'). RoHS/REACH/lead-free status not stated in provided data.
