K4A8G165WG-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
Référence : K4A8G165WG-BCWE ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $44.97 | $44,97 |
| 10 | $42.72 | $427,20 |
| 100 | $40.47 | $4 047,00 |
| 500 | $38.22 | $19 110,00 |
| 1 000 | $35.98 | $35 980,00 |
K4A8G165WG-BCWE Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR DRAM family. A DRAM stores each bit in a capacitor-based memory cell that must be periodically refreshed, and the synchronous interface means all operations are timed to a clock signal. Within the memory hierarchy, the K4A8G165WG-BCWE sits at the main-memory component level: DRAM cell -> DDR4 SDRAM -> synchronous DRAM -> volatile memory IC -> semiconductor. Compared with DDR3, DDR4 lowers the core supply from 1.5V to 1.2V, raises bank-group parallelism, and improves burst length and prefetch efficiency, so system designers gain both bandwidth and power savings.
Key features include the 8 Gbit density in a single x16-wide device, a 3200 Mbps/pin maximum data rate (PC4-25600 class), and the 1.2V operating supply that reduces dynamic power versus 1.35V DDR3L alternatives. The commercial temperature range of 0C to +85C suits desktop, consumer, and networking equipment but not extended-temperature industrial designs (the -I grade variant serves that need). Samsung B-die based construction is well regarded for tight timing margins.
Architecturally, the device uses a 16n prefetch with bank groups, enabling high effective bandwidth while keeping internal core speeds manageable. On-die termination, DLL, and ZQ calibration circuits maintain signal integrity across the high-speed command/address and data buses as defined by the DDR4 SDRAM standard.
Typical applications include desktop PC and workstation DIMMs, embedded CPU memory subsystems (ARM/x86 SoCs), networking routers and switches, industrial gateways, and consumer electronics requiring 1-8 GB of main memory per board.
Design consideration: DDR4 fly-by routing requires per-DRAM write leveling and careful length matching; budget ~1.2V +/- 3% (per Samsung datasheet) and verify termination against your memory controller's supported speed grade.
This page synthesizes distributor pricing, stock data, drop-in alternatives, and practical design notes not found in the Samsung datasheet alone.
Alternatives de remplacement direct pour K4A8G165WG-BCWE — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G165WC-BCWE
✓ En stock
$38 / unité
Voir la fiche technique →K4A8G165WB-BCWE
✓ En stock
$6.55 / unité
Voir la fiche technique →H5AN8G6NDJR-UHC
✓ En stock
$34.6 / unité
Voir la fiche technique →NT6AN8T6WBJ1B1
✓ En stock
$8.75 / unité
Voir la fiche technique →MT40A512M16LY-062E IT:E
📋 Alternative de référence (hors catalogue)
K4A8G165WG-BCWE Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM (Volatile DRAM) |
| Taille de mémoire | 8 Gbit |
| Memory Organization | 512M x 16 |
| Interface | Parallel |
| Max Data Rate | 3200 Mbps/pin |
| Clock Cycle Time | 19 ns |
| Tension d'alimentation | 1.2 V |
| Boîtier | FBGA-96 (BGA-96), surface mount |
| Température de fonctionnement | 0C to +85C (commercial) |
| Refresh | Auto/self refresh per DDR4 standard |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Manufacturer | Samsung Semiconductor, Inc. |
| Product Status | Active |
| Typical Standby Current | 20 mA (per LCSC listing) |
| Die Generation | Samsung B-die, 8Gb DDR4 x16 |
Guide de configuration des broches du K4A8G165WG-BCWE fbga-96 (bga-96), surface mount
Configuration des broches du K4A8G165WG-BCWE (boîtier fbga-96 (bga-96), surface mount). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4A8G165WG-BCWE.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4A8G165WG-BCWE convient pour 6 applications: Desktop PC and Workstation DIMM Main Memory, Embedded SoC Memory Subsystem, Networking Routers and Switches, Industrial Gateways and Edge Computing, Consumer Electronics and Smart TV, Test, Measurement, and FPGA Memory Expansion.
Desktop PC and Workstation DIMM Main Memory
The K4A8G165WG-BCWE's 8Gb density and 3200 Mbps data rate make it a mainstream building block for desktop DDR4 UDIMMs at the PC4-25600 speed class. Soldered eight or sixteen x16 devices per module, a single-rank 8 GB DIMM uses eight of these chips across the 64-bit data bus, delivering 25.6 GB/s peak bandwidth at 1.2V. The x16 organization halves the chip count versus x8 parts for a given bus width, reducing BOM cost on consumer modules. Because the device is commercial-temperature (0C to +85C) rated, it fits typical office and home desktop thermal envelopes where case airflow keeps DIMM surfaces below 85C. Per the Samsung datasheet, standard DDR4 termination and ZQ calibration schemes apply without special firmware.
Recommandé
Embedded SoC Memory Subsystem
ARM and x86 embedded SoCs with DDR4 controllers pair naturally with the K4A8G165WG-BCWE when designs need 1-2 GB of main memory in a small footprint. A single x16 device provides a 16-bit memory channel at up to 3200 Mbps, giving 3.2 GB/s per chip, and two chips form a 32-bit channel common on industrial ARM compute modules. The 1.2V supply simplifies the PMIC rail design (most embedded PMICs offer a dedicated DDR4 1.2V VDD rail with VTT tracking). Because the part uses the JEDEC DDR4 x16 ball map, reference designs validated on Samsung, Micron, or SK Hynix 8Gb x16 parts can usually second-source directly with a timing-table update in the bootloader or BSP.
Recommandé
Networking Routers and Switches
Enterprise routers, switches, and NPUs use DDR4 SDRAM as packet-buffer and table memory, and the K4A8G165WG-BCWE's 3200 Mbps rate provides the bandwidth needed to sustain line-rate buffering on 10-25 GbE platforms. Multiple x16 devices are arranged in a wide 64- or 128-bit controller channel; eight chips give 8 GB of buffer memory with 25.6 GB/s aggregate bandwidth. Network chassis environments are typically air-conditioned to 0-45C ambient, keeping junction temperatures within the 85C commercial limit with normal PCB heat spreading. Designers should follow the memory controller vendor's fly-by routing guidelines and length-match CK/CA and DQS groups per the Samsung datasheet electrical section.
Recommandé
Industrial Gateways and Edge Computing
Indoor industrial gateways, PLCs, and edge-AI boxes use the K4A8G165WG-BCWE where operating environments stay within the 0C to +85C commercial range, such as climate-controlled cabinets and indoor panel mounting. The 1.2V rail keeps DRAM power low (LCSC lists roughly 20 mA typical standby), which matters for fanless edge devices with strict thermal budgets - a single 8Gb device contributes only a few hundred milliwatts of dynamic power at moderate utilization. For unheated outdoor or cold-storage deployments, engineers must instead select the -I extended-temperature variant of the Samsung 8Gb x16 family, since the -BCWE grade is not qualified below 0C.
Recommandé
Consumer Electronics and Smart TV
Smart TVs, set-top boxes, gaming peripherals, and NAS enclosures routinely need 1-4 GB of DDR4 main memory at commodity cost, and the K4A8G165WG-BCWE fits this role with its high volume availability (over 35,000 units across distributors as of August 2026) and PC4-25600-class bandwidth for 4K video decode and UI rendering. SoC platforms such as Amlogic, Rockchip, and Realtek-based designs with DDR4 x16 controllers can directly address this device; two chips provide 2 GB on a 32-bit bus. The commercial temperature range covers typical living-room conditions, and the 1.2V supply keeps standby power within ENERGY STAR-style idle budgets when combined with controller self-refresh modes.
Recommandé
Test, Measurement, and FPGA Memory Expansion
High-bandwidth test instruments and FPGA-based data-acquisition systems use DDR4 SDRAM for deep capture buffering, and the K4A8G165WG-BCWE's 3200 Mbps interface matches the memory-controller IP cores shipped with major FPGA families. An x16 DDR4 device on a dedicated memory daughterboard provides 1 GB per chip with 3.2 GB/s streaming bandwidth - enough for sustained multi-gigasample capture replay. DDR4 memory controllers in Xilinx/AMD, Microchip (Microsemi), and Lattice FPGA families include PHY calibration that handles on-die termination and write leveling, so single-rank x16 integration is a well-trodden path. Commercial-temperature rating suits bench instruments; choose the -I grade for field-deployed hardware.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G165WG-BCWE — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G165WC-BCWE | K4A8G165WB-BCWE | MT40A512M16LY-062E IT | H5AN8G6NDJR-UHC | NT6AN8T6WBJ1B1 |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (DDR4 x16) | FBGA-96 - same | FBGA-96 - same | E: DDR4 x16 FBGA - JEDEC-compatible | DDR4 x16 FBGA - JEDEC-compatible | DDR4 x16 FBGA - JEDEC-compatible |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | E: Micron Technology | SK Hynix | Nanya Technology |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | E: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | E: 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | E: 1.2 V | 1.2 V | 1.2 V |
Principaux différenciateurs
- Highest speed grade in the Samsung 8Gb x16 family (vs K4A8G165WC-BCWE)
- Samsung B-die, widely qualified platform (vs MT40A512M16LY-062E IT:E)
- Trade-off: commercial temperature only (vs K4A8G165WG-BIWE (industrial grade))
Notes de conception
DDR4-3200 fly-by topology requires precise length matching: keep CK/CA trace skew within the memory controller's specified window (typically +/-25 ps across the address/command group) and match each DQS pair to its DQ byte group to within +/-10 ps. Route on inner layers with solid reference planes, and use 34-40 ohm series termination on controller-side address/command traces. Samsung datasheet AC timing tables define setup/hold at the DRAM pin, so de-rate for your stackup's propagation delay.
Supply the K4A8G165WG-BCWE at 1.2V with the DDR4 tolerance band (approximately +/-3% per the Samsung datasheet operating range). Use a PMIC with a dedicated DDR4 rail and VTT termination tracking output (e.g., a DDR VTT sink-source LDO at VDD/2 = 0.6V). Estimated: at moderate utilization a single 8Gb x16 device draws on the order of a few hundred milliwatts dynamic; size the VTT rail for the full bus termination current of all devices sharing the bus, not just one chip.
Do not mix speed grades (WB/WC/WG) on the same DRAM bus - the controller must run at the slowest grade, and intermixed dies can cause marginal write-leveling. Verify your controller supports x16 DDR4 with the correct burst chop and bank-group configuration for 3200 Mbps operation. Remember the commercial 0C minimum: the -BCWE grade is not qualified below 0C, so cold-start in unheated enclosures requires the industrial -I variant or in-cabinet heating.
Informations de conformité
RoHS compliance stated on JLCPCB/LCSC product page (C41368581). REACH, halogen-free, and conflict-minerals declarations not found in retrieved data; request formal certificates from Samsung or distributor.
