M95640-DRMN3TP/K - 64Kbit SPI EEPROM | STMicroelectronics
Référence : M95640-DRMN3TP/K ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.4 | $4,00 |
| 100 | $0.35 | $35,00 |
| 500 | $0.3 | $150,00 |
| 1 000 | $0.25 | $250,00 |
M95640-DRMN3TP/K Présentation
An EEPROM (Electrically Erasable Programmable Read-Only Memory) is a non-volatile memory that retains data when power is removed, and can be electrically erased and reprogrammed in-system. It sits within the memory hierarchy between volatile RAM and permanent storage like flash, offering byte-level write granularity and high endurance. In embedded systems, EEPROMs are used to store calibration data, configuration parameters, device IDs, and small logs that must survive power cycles.
Key features of the M95640-DRMN3TP/K include a wide operating voltage range (1.8V to 5.5V), a 20 MHz SPI clock, a 32-byte page write buffer, and a write protection scheme using a hardware pin (W) and status register bits. It also features a software write protection (BP0, BP1) and a hardware write protect pin, ensuring data integrity. The device supports both sequential and random read operations, and its low standby current (typically 2 uA) makes it ideal for battery-powered applications.
The M95640-DRMN3TP/K is fabricated using ST's advanced CMOS technology, providing high endurance (4 million write cycles) and 200-year data retention. The SPI interface simplifies integration with microcontrollers, requiring only four signals: Serial Clock (C), Serial Data In (D), Serial Data Out (Q), and Chip Select (S). The device is available in the SO-8N package, which is widely used and easy to solder, and is RoHS compliant.
Typical applications include smart meters, industrial sensors, automotive electronics (e.g., odometer, battery management), medical devices, and IoT nodes where reliable non-volatile storage is required. The wide voltage range and low power consumption make it suitable for both 3.3V and 5V systems.
When designing with this device, ensure proper decoupling on the supply pin and respect the write cycle time (typically 5 ms) after each write operation. The hardware write protect pin should be tied to a known state to prevent accidental writes during power-up.
Alternatives de remplacement direct pour M95640-DRMN3TP/K — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec M95640-DRMN3TP/K (même facteur de forme et même empreinte) — différant par Data Retention, Endurance, Operating Temperature, Package, Standby Current.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
M95640-DRMN3TP/K
✅ Remplacement direct✓ En stock
$0.25 / unité
Voir la fiche technique →M95640-DRMN3TP
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
M95640-DRMN6TP
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
AT25640B-SSHL-T
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.3 / unité
Voir la fiche technique →CAT25640LI-G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
M95640-DRMN3TP/K Spécifications
| Taille de mémoire | 64 Kbit (8 Kbyte) |
| Type d'interface | SPI |
| Clock Frequency | 20 MHz (max) |
| Tension d'alimentation | 1.8 V to 5.5 V |
| Organisation de la mémoire | 8192 x 8 bits |
| Page Size | 32 bytes |
| Write Cycle Time | 5 ms (typical) |
| Endurance | 4 million write cycles |
| Data Retention | 200 years |
| Standby Current | 2 uA (typical) |
| Température de fonctionnement | -40C to +85C |
| Boîtier | SO-8N |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Write Protection | Hardware pin (W) and software (BP0, BP1) |
Configuration des broches de M95640-DRMN3TP/K
| Broche 1 | S — Chip Select (active low) |
| Broche 2 | C — Serial Clock |
| Broche 3 | D — Serial Data Input |
| Broche 4 | Q — Serial Data Output |
| Broche 5 | GND — Ground |
| Broche 6 | VCC — Power Supply |
| Broche 7 | W — Write Protect (active low) |
| Broche 8 | VSS — Ground (same as GND) |
Applications typiques
M95640-DRMN3TP/K convient pour 6 applications: Smart Meters, Industrial Sensors, Automotive Electronics, Medical Devices, IoT Nodes, Consumer Electronics.
Smart Meters
The M95640-DRMN3TP/K is used in smart meters to store calibration data, consumption logs, and configuration parameters. Its 64 Kbit capacity and 4 million write cycles ensure reliable long-term data logging. The SPI interface allows easy integration with metering microcontrollers, and the wide voltage range (1.8V-5.5V) accommodates various power supply designs. Low standby current (2 uA) is critical for battery-powered meters, extending battery life. The device's high endurance supports frequent updates of consumption data, while 200-year retention ensures data integrity over the meter's lifetime. In a typical smart meter, the EEPROM is connected to the MCU via SPI, with the chip select (S) controlled by a GPIO. The write protect pin (W) is tied to a GPIO to prevent accidental writes during firmware updates. The device operates reliably in the -40C to +85C temperature range, suitable for outdoor installations.
Recommandé
Industrial Sensors
In industrial sensors, the M95640-DRMN3TP/K stores calibration coefficients, device IDs, and configuration data. Its high endurance (4 million cycles) is essential for sensors that undergo frequent recalibration. The SPI interface provides fast read/write access, and the wide voltage range allows operation from 3.3V or 5V supplies. The device's small SO-8N package fits compact sensor modules. The low standby current (2 uA) is beneficial for sensors in power-constrained environments. The EEPROM is typically connected to a sensor microcontroller, with the chip select (S) and write protect (W) pins controlled by GPIOs. The device's 200-year retention ensures calibration data remains intact over the sensor's operational life. The -40C to +85C temperature range covers most industrial environments. In a typical industrial sensor, the EEPROM stores sensor-specific parameters that are read at startup, allowing the MCU to apply correct calibration. The SPI clock frequency of 20 MHz enables quick data retrieval, minimizing startup time.
Recommandé
Automotive Electronics
The M95640-DRMN3TP/K is used in automotive electronics for storing odometer values, battery management data, and configuration parameters. Its wide temperature range (-40C to +85C) and high endurance (4 million cycles) meet automotive reliability requirements. The SPI interface is widely supported by automotive MCUs. The device's 64 Kbit capacity is sufficient for storing critical data. The write protection features (hardware pin W and software BP0/BP1) prevent accidental corruption, which is crucial in automotive environments. The low standby current (2 uA) is important for always-on systems like battery management. In a typical automotive application, the EEPROM is connected to the MCU via SPI, with the write protect pin tied to a GPIO that is only enabled during authorized writes. The device's 200-year retention ensures data persists for the vehicle's lifetime. The SO-8N package is robust and suitable for automotive PCB assemblies. The device operates reliably under vibration and temperature extremes, making it a trusted choice for automotive data storage.
Recommandé
Medical Devices
In medical devices, the M95640-DRMN3TP/K stores device settings, calibration data, and patient logs. Its high reliability (4 million write cycles, 200-year retention) is essential for medical applications where data integrity is critical. The wide voltage range (1.8V-5.5V) allows operation from battery or regulated supplies. The low standby current (2 uA) is beneficial for portable medical devices. The SPI interface is simple and fast, enabling quick data access. The device's small SO-8N package fits compact medical device PCBs. The write protection features ensure that critical data is not accidentally overwritten. In a typical medical device, the EEPROM is used to store device configuration and calibration factors, which are read at startup. The device operates within the -40C to +85C temperature range, covering most medical environments. The high endurance supports frequent updates of patient data logs. The device's compliance with RoHS ensures it meets medical device environmental standards.
Recommandé
IoT Nodes
The M95640-DRMN3TP/K is ideal for IoT nodes that require non-volatile storage for device credentials, sensor calibration, and configuration data. Its low power consumption (2 uA standby) is critical for battery-powered IoT devices. The wide voltage range (1.8V-5.5V) allows operation from various battery chemistries. The SPI interface is efficient for low-power microcontrollers. The 64 Kbit capacity is sufficient for storing device certificates and configuration. The high endurance (4 million cycles) supports frequent updates of sensor data logs. The device's small SO-8N package is suitable for compact IoT modules. The write protection features prevent unauthorized writes, enhancing security. In a typical IoT node, the EEPROM stores a unique device ID and network credentials, which are read at boot. The device operates in the -40C to +85C temperature range, covering most IoT deployment environments. The 200-year retention ensures data persists for the device's lifetime. The device's RoHS compliance is important for environmental regulations.
Recommandé
Consumer Electronics
In consumer electronics, the M95640-DRMN3TP/K is used for storing user preferences, device settings, and calibration data. Its low cost and high reliability make it a popular choice. The wide voltage range (1.8V-5.5V) supports various consumer devices. The SPI interface is simple and widely supported. The 64 Kbit capacity is sufficient for most consumer applications. The low standby current (2 uA) is beneficial for battery-powered devices like remote controls. The device's small SO-8N package fits compact consumer PCBs. The write protection features prevent accidental data corruption. In a typical consumer device, the EEPROM stores user settings that are read at power-on. The device operates within the -40C to +85C temperature range, covering consumer environments. The high endurance (4 million cycles) supports frequent updates of user preferences. The 200-year retention ensures settings are not lost. The device's RoHS compliance meets consumer electronics regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour M95640-DRMN3TP/K — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | M95640-DRMN3TP | M95640-DRMN6TP | AT25640B-SSHL-T | CAT25640LI-G |
|---|---|---|---|---|---|
| Package | SO-8N | SO-8N | SO-8N | SO-8N | SO-8N |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Microchip Technology | onsemi |
| Memory Size | 64 Kbit | 64 Kbit | 64 Kbit | 64 Kbit | 64 Kbit |
| Interface | SPI | SPI | SPI | SPI | SPI |
| Max Clock Frequency | 20 MHz | 20 MHz | 20 MHz | 20 MHz | 20 MHz |
| Supply Voltage | 1.8V - 5.5V | 1.8V - 5.5V | 1.8V - 5.5V | 1.8V - 5.5V | 1.8V - 5.5V |
| Endurance | 4 million cycles | 4 million cycles | 4 million cycles | 1 million cycles | 1 million cycles |
| Data Retention | 200 years | 200 years | 200 years | 100 years | 100 years |
Principaux différenciateurs
- Higher endurance (4 million cycles) compared to competitors (vs AT25640B-SSHL-T)
- Longer data retention (200 years) vs competitors (vs CAT25640LI-G)
- Same-brand variants offer identical performance (vs M95640-DRMN3TP)
Notes de conception
Decouple the VCC pin with a 0.1 uF ceramic capacitor placed as close to the pin as possible. For noisy environments, add a 10 uF electrolytic capacitor in parallel. Ensure the supply voltage stays within 1.8V to 5.5V to avoid damage.
Keep SPI signal traces short and matched in length to minimize signal integrity issues. Use a ground plane under the device to reduce noise. Place the chip select (S) pull-up resistor (10 kOhm) to VCC to ensure a defined state when the MCU is not driving it.
Do not forget to handle the write protect pin (W). Tie it to VCC to disable write protection, or to GND to enable it. During power-up, ensure the device is not selected (S high) to avoid accidental writes. Respect the write cycle time (5 ms) after each write operation.
Informations de conformité
RoHS compliant per STMicroelectronics. AEC-Q100 not applicable for this standard grade; automotive grade variants may be available.
