MHT1008NT1 - 12.5W RF LDMOS 2450MHz | NXP Semiconductors
Référence : MHT1008NT1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.02 | $12,02 |
| 10 | $11.4 | $114,00 |
| 100 | $10.85 | $1 085,00 |
| 500 | $10.2 | $5 100,00 |
| 1 000 | $9.55 | $9 550,00 |
MHT1008NT1 Présentation
An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimized for high-frequency, high-power RF amplification. Within the broader taxonomy it sits under: LDMOS -> RF power MOSFET -> RF transistor -> discrete semiconductor. LDMOS parts became dominant in cellular base-station PA sockets because of high breakdown, high efficiency, and good thermal conductivity when mounted to a heatsink. The MHT1008NT1 leverages those same traits for 2.45 GHz microwave-energy applications rather than communications, where regulatory ISM-band operation and robust consumer-grade ruggedness matter more than linearity.
Key features include an integrated ESD protection structure, stable operation into a 5:1 VSWR load mismatch, high drain efficiency at 28 V/12.5 W output, and a flanged ceramic package that bolts directly to a heatsink for ground-return thermal management. The device is N-channel enhancement-mode, so a positive gate bias above the threshold turns it on; no negative gate supply is required at idle.
Architecturally the part uses a single-ended, internally matched input stage roughly tuned for the 2.4-2.5 GHz ISM band, simplifying the customer's PCB design - a 50 ohm interface with minimal external matching components is achievable. Operating at 28 V rather than the older 13.6 V rails used in early-generation cooking tubes significantly reduces current and copper losses in the cabinet wiring.
Typical applications include consumer microwave ovens using solid-state RF generators instead of magnetrons, commercial-grade restaurant cooking appliances, industrial RF drying and plasma generation systems, and laboratory 2.45 GHz test amplifiers. Its 28 V operation makes it compatible with rectified industrial 24 V bus rails when filtered and boosted by a small PFC stage.
A key design consideration: the PLD-1.5W flange MUST be bolted to a heatsink with proper thermal compound; the device dissipates tens of watts at full CW output, and derating begins at junction temperatures above 150 C. Also verify that the application circuit respects the datasheet's load-pull contours for best efficiency.
Alternatives de remplacement direct pour MHT1008NT1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MHT1008NT1 (même facteur de forme et même empreinte) — différant par Manufacturer, Mounting Type, Operating Frequency, Part Number.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MHT1008NT1G
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MHT1008NR2
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MHT1008NT1 - automotive grade equivalent
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MHT1008NT1 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors |
| Part Number | MHT1008NT1 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode |
| Application | RF Power Transistor, ISM Band |
| Operating Frequency | 2400 MHz to 2500 MHz (2450 MHz typ) |
| Test Frequency | 2450 MHz |
| Drain Supply Voltage (Vdd) | 28 V (typical) |
| Output Power (CW) | 12.5 W |
| Power Gain (typical) | 18.6 dB at 2450 MHz |
| Drain Current | 110 mA |
| Power Gain (DigiKey reported) | 20.9 dB (max value reported by distributor) |
| Boîtier / Format | PLD-1.5W (SOT1811), ceramic flanged |
| Type de montage | Chassis / flange mount with bolt-down heatsink |
Configuration des broches de MHT1008NT1
| Broche 1 | GATE — RF input gate bias lead (positive DC bias turns device on) |
| Broche 2 | DRAIN — RF output drain lead (connects to 28 V via bias-T) |
| Broche FLANGE | SOURCE / THERMAL — Source and thermal pad (bolted to heatsink for ground return and cooling) |
MHT1008NT1 Zone de fonctionnement sûr (estimated from datasheet load-pull data)
Applications typiques
MHT1008NT1 convient pour 6 applications: Consumer Solid-State Microwave Oven RF Generator, Commercial Restaurant Cooking Equipment, Industrial RF Drying and Curing Systems, RF Plasma Generation for Semiconductor Processing, Laboratory 2.45 GHz RF Test Amplifiers, Solid-State RF Energy Research Modules.
Consumer Solid-State Microwave Oven RF Generator
The MHT1008NT1 targets consumer microwave ovens that replace legacy 2.45 GHz magnetrons with solid-state RF energy modules. The 28 V drain supply aligns with rectified mains-derived rails, the 18.6 dB typical gain at 2450 MHz feeds the cavity antenna chain, and 12.5 W CW supports lower-power countertop designs. Pairing multiple MHT1008NT1 devices in a power-combiner stage scales output for full-size ovens while keeping each stage stable.
Recommandé
Commercial Restaurant Cooking Equipment
In commercial restaurant cooking, the MHT1008NT1 enables precise, repeatable 2.45 GHz RF power delivery for speed-cook ovens where magnetron replacement improves uniformity and lifetime. Its 2450 MHz center frequency is the global ISM allocation, the 28 V rail simplifies cabinet wiring vs legacy 13.6 V systems, and the PLD-1.5W ceramic flange bolts directly to a chassis heatsink - critical in continuous-duty commercial duty cycles.
Recommandé
Industrial RF Drying and Curing Systems
Industrial RF drying of textiles, paper, and food products benefits from the MHT1008NT1's 2.45 GHz high-efficiency LDMOS architecture. The 18.6 dB gain and 12.5 W CW permit multi-device RF-combiner designs that deliver coherent kilowatts into applicator chambers. Ceramic flange construction withstands the elevated ambient temperatures near drying tunnels and supports long production shifts without thermal derating.
Recommandé
RF Plasma Generation for Semiconductor Processing
Low-pressure plasma sources used in semiconductor etch and deposition systems can use the MHT1008NT1 as a CW RF power element. The 2450 MHz output excites plasma reactors directly, and the high gain reduces pre-driver stages in the cabinet. Its solid-state switching enable faster ignition/restart sequencing compared with magnetron-based plasma sources, supporting modern pulsed-plasma process recipes.
Recommandé
Laboratory 2.45 GHz RF Test Amplifiers
In laboratory test amplifiers and EMC test setups, the MHT1008NT1's 12.5 W CW output at 2450 MHz provides a moderate-power source for antenna pattern measurement and EMC susceptibility tests. Its high gain (18.6 dB) eliminates multi-stage pre-driver chains, while the 28 V rail pairs with standard laboratory DC supplies. Combined with directional couplers and circulators, it builds a compact benchtop RF energy source.
Recommandé
Solid-State RF Energy Research Modules
Research platforms exploring solid-state cooking and advanced RF material processing use the MHT1008NT1 as a benchmark 2.45 GHz power device. Its stable operation into mismatched loads and broad commercial availability make it a standard reference for prototyping novel cavity geometries and phased-array RF heating concepts. Multiple MHT1008NT1 units can be evaluated in parallel to characterize combiner network losses.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MHT1008NT1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MHT1008NT1G | MHT1008NR2 | MRF24300N |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5W (SOT1811) ceramic flange | PLD-1.5W (SOT1811) - same | PLD-1.5W (SOT1811) - same | TO-220 (different package) |
| Operating Frequency | 2400-2500 MHz | 2400-2500 MHz - same | 2400-2500 MHz - same | 2000-2500 MHz - similar |
| Output Power (CW) | 12.5 W | 12.5 W - same | 12.5 W - same | 300 W (much higher) |
| Drain Supply Voltage | 28 V typical | 28 V - same | 28 V - same | 50 V |
| Transistor Type | LDMOS N-Channel Enhancement-Mode | LDMOS - same | LDMOS - same | LDMOS N-Channel |
| Target Application | 2.45 GHz ISM Cooking / RF Energy | Same ISM cooking | Same ISM cooking | Cellular base station PA |
Principaux différenciateurs
- Industry-standard 2.45 GHz ISM power LDMOS with proven NXP manufacturing (vs MHT1008NT1G (same-brand same-spec family variant))
- Higher-power sister part available in same NXP RF energy family (vs MRF24300N)
- Solid-state 2.45 MHz RF source vs legacy magnetron tubes (vs Magnetron 2M214 (typical consumer oven magnetron))
Notes de conception
The MHT1008NT1 dissipates tens of watts of thermal loss during full-CW 12.5 W operation at 2450 MHz. The PLD-1.5W ceramic flange MUST be bolted to a metal heatsink (typically an aluminum chassis spreader) using a thin layer of thermal interface material. Estimated: with a 70% drain efficiency and 12.5 W RF output, DC input is ~18 W, so device dissipation is ~5.5 W. A heatsink with thermal resistance below 4 C/W keeps the junction-to-ambient rise below the datasheet's derating threshold.
Even though the MHT1008NT1 is flange-mounted, the gate and drain leads need a controlled-impedance microstrip launch on the host PCB. Use 50 ohm traces with a low-loss substrate such as RO4350B. Place the drain bias-T (or quarter-wave line plus RF choke) close to the drain lead to minimize parasitic inductance. The exposed source flange provides the ground return - stitch vias around the lead cutouts are not applicable since this is flange-mounted.
Decoupling of the 28 V drain rail is critical. Use a 10 uF aluminum polymer bypass plus a 100 nF ceramic directly at the bias-T feed, and a 1 uF ceramic at the device lead for HF decoupling. The gate bias rail should be heavily filtered (10 kohm resistor plus 10 uF cap) to suppress low-frequency oscillations. Keep gate and drain traces physically separated on the PCB to avoid positive feedback that could cause instability.
Do not attempt to operate the MHT1008NT1 below ~1 W RF output without proper load-pull matching - low-power operation outside the datasheet's recommended impedance can cause instability and oscillation. Also avoid operating into an open-circuit or short-circuit load - the datasheet specifies 5:1 VSWR ruggedness but survival testing at full mismatch can shorten the part's life. Use an isolator or circulator at the RF output for production designs.
NXP application notes caution against exceeding the absolute maximum drain voltage (typically 65 V transient). Verify that the 28 V rail's transient response during RF switching does not create overshoot above the rating. Add a TVS diode or a snubber across the drain supply if long wiring harnesses are used. Also pay attention to the gate voltage rating and ensure static-discharge precautions during handling - ESD can permanently damage the gate oxide.
Informations de conformité
Compliance data not explicitly published in the Verified Web Data. Older PLD-package ceramic flanged RF power parts often have limited RoHS statements - request the latest manufacturer compliance letter from NXP for production builds.
