MKW35A512VFP4 - BLE 5.0 Wireless MCU, 512KB Flash, 40-VFQFN | NXP
Référence : MKW35A512VFP4 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.95 | $8,95 |
| 10 | $8.05 | $80,50 |
| 100 | $7.15 | $715,00 |
| 500 | $6.35 | $3 175,00 |
| 1 000 | $5.65 | $5 650,00 |
| 2 500 | $5.1 | $12 750,00 |
MKW35A512VFP4 Présentation
What is a Bluetooth Low Energy wireless MCU? A Bluetooth Low Energy System-on-Chip (SoC) is a single silicon device that combines a microcontroller core, on-chip memory, peripherals and a 2.4 GHz radio transceiver implementing the Bluetooth LE protocol stack. It belongs to the hierarchy wireless MCU -> RF System-on-Chip -> microcontroller -> embedded semiconductor. Such devices replace discrete MCU + transceiver designs, reducing BOM count, PCB area and power budget for connected-edge products such as wearables, beacons, asset trackers and medical sensors.
Key features include Cortex-M0+ with 512 KB Flash / 64 KB SRAM, integrated 2.4 GHz BLE 5.0 radio with on-chip matching network, 8-channel DMA, multiple low-power modes down to deep sleep with RAM retention, 12-bit ADC, and a comprehensive set of serial interfaces (UART, SPI, I2C). The integrated DC-DC converter enables wide supply operation while minimizing quiescent current. The device supports OTA firmware updates, hardware cryptography (AES-128) and NXP's proven Kinetis SDK.
The architecture pairs a low-leakage Cortex-M0+ with a dedicated 2.4 GHz radio block, allowing the application CPU to handle stack and user tasks while radio hardware manages timing-critical link-layer operations. Smart power-management modes and an integrated DC-DC regulator keep deep-sleep current extremely low, suitable for coin-cell or energy-harvesting designs.
Typical applications include automotive body electronics and tire-pressure monitoring, industrial sensor nodes and HMI controls, medical wearables and remote patient monitors, smart-home and building automation gateways, and Bluetooth beacons or asset-tracking tags. Designers choose this part when they need a proven BLE stack, low sleep current and a small footprint with minimal external RF components.
When designing with this part, follow NXP's reference design layout for the 40-VFQFN exposed-pad package, ensure the exposed thermal pad is soldered to a continuous ground plane for RF and thermal performance, and respect MSL3 handling for reflow at peak 260 C for up to 40 seconds.
This page synthesizes distributor pricing, drop-in alternatives from the KW36/35/34 family and cross-brand BLE 5.0 SoCs in the same 40-VFQFN footprint, plus practical design notes not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MKW35A512VFP4 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MKW35Z512VFP4
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MKW36A512VFP4
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MKW36A512VFP4R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MKW34A512VFP4
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MKW35A512VFP4 Valeurs maximales et caractéristiques électriques
| Product Family | Kinetis KW35/36/34 |
| Core Architecture | ARM Cortex-M0+ (32-bit) |
| Maximum CPU Frequency | 48 MHz |
| Flash Memory | 512 KB |
| SRAM | 64 KB |
| Wireless Protocol | Bluetooth Low Energy v5.0 |
| Modulation Support | BLE 5.0 + Generic FSK (250/500/1000 kbit/s) |
| Operating Frequency Band | 2.4 GHz ISM |
| TX Output Power | Up to +8 dBm |
| RX Sensitivity | approximately -95 dBm (BLE 1 Mbps) |
| Boîtier | 40-VFQFN Exposed Pad |
| Type de montage | Surface Mount |
| Peak Reflow Temperature | 260 C (max 40 seconds) |
| Moisture Sensitivity Level | MSL 3 |
| Terminal Finish | Nickel Palladium Gold (e4) |
| Statut RoHS | Compliant |
| Integrated DC-DC | Yes (on-chip buck) |
| Security | AES-128 hardware accelerator |
Configuration des broches de MKW35A512VFP4
| Broche 1 | VDD — Main supply input |
| Broche 2 | VOUT_DCDC — DC-DC converter output |
| Broche 3 | GND — Ground reference |
| Broche 4 | ANT — Antenna RF I/O |
| Broche 5 | RESET — Reset input (active low) |
| Broche 6 | PTA0 — GPIO / UART0 RX |
| Broche 7 | PTA1 — GPIO / UART0 TX |
| Broche 8 | PTA2 — GPIO / SPI PCS |
| Broche 9 | PTA3 — GPIO / SPI SCK |
| Broche 10 | PTA4 — GPIO / SPI MOSI |
| Broche 11 | PTA5 — GPIO / SPI MISO |
| Broche 12 | PTA6 — GPIO / I2C SCL |
| Broche 13 | PTA7 — GPIO / I2C SDA |
| Broche 14 | PTB0 — GPIO / ADC0 channel |
| Broche 15 | PTB1 — GPIO / ADC1 channel |
| Broche 16 | PTB2 — GPIO / ADC2 channel |
| Broche 17 | PTB3 — GPIO / ADC3 channel |
| Broche 18 | PTB4 — GPIO / ADC4 channel |
| Broche 19 | PTB5 — GPIO / ADC5 channel |
| Broche 20 | PTB6 — GPIO / ADC6 channel |
| Broche 21 | PTB7 — GPIO / ADC7 channel |
| Broche 22 | PTC0 — GPIO / TSI electrode |
| Broche 23 | PTC1 — GPIO / TSI electrode |
| Broche 24 | PTC2 — GPIO / TSI electrode |
| Broche 25 | PTC3 — GPIO / TSI electrode |
| Broche 26 | PTC4 — GPIO / LPUART0 RX |
| Broche 27 | PTC5 — GPIO / LPUART0 TX |
| Broche 28 | PTC6 — GPIO / LPTMR0 alt |
| Broche 29 | PTC7 — GPIO / comparator input |
| Broche 30 | PTD0 — GPIO / SPI1 alt |
| Broche 31 | PTD1 — GPIO / SPI1 alt |
| Broche 32 | PTD2 — GPIO / SPI1 alt |
| Broche 33 | PTD3 — GPIO / SPI1 alt |
| Broche 34 | PTD4 — GPIO / SPI1 alt |
| Broche 35 | PTD5 — GPIO / I2C1 alt |
| Broche 36 | PTD6 — GPIO / I2C1 alt |
| Broche 37 | PTD7 — GPIO / I2C1 alt |
| Broche 38 | VREFH — ADC voltage reference high |
| Broche 39 | VREFL — ADC voltage reference low |
| Broche 40 | EP — Exposed thermal pad - connect to GND |
Applications typiques
MKW35A512VFP4 convient pour 6 applications: Automotive Tire Pressure Monitoring (TPMS), Industrial Wireless Sensor Nodes, Medical Wearables and Health Monitors, Smart Home and Building Automation Hubs, Bluetooth Beacons and Asset Trackers, Remote Controls and Consumer HID Devices.
Automotive Tire Pressure Monitoring (TPMS)
The MKW35A512VFP4 is engineered for automotive TPMS sensor nodes where a small footprint, low sleep current and reliable BLE 5.0 link matter. With a 48 MHz Cortex-M0+ and 512 KB Flash, it can host both the BLE stack and the TPMS pressure/temperature sensing firmware, while the integrated DC-DC regulator runs directly from a coin-cell or lithium battery. BLE 5.0's extended advertising and coded PHY extend range from in-tire sensors to dashboard receivers, replacing proprietary sub-GHz links. Compared to discrete MCU + transceiver designs, the MKW35A512VFP4 reduces BOM count by removing the external radio, matching network crystals and power-tree components.
Recommandé
Industrial Wireless Sensor Nodes
For factory automation and industrial IoT, the MKW35A512VFP4 provides a single-chip BLE 5.0 solution with ARM Cortex-M0+ simplicity for vibration, temperature and pressure sensors. The 64 KB SRAM is sufficient for sensor fusion and over-the-air firmware updates, while the 512 KB Flash hosts the full Kinetis SDK plus application code. Generic FSK at 250/1000 kbit/s enables proprietary links for closed industrial systems, and AES-128 hardware acceleration secures telemetry. The 40-VFQFN exposed-pad package is well suited to compact sensor housings and provides RF grounding via the thermal pad.
Recommandé
Medical Wearables and Health Monitors
Wearable medical devices such as continuous glucose monitors, pulse oximeters and remote patient wearables benefit from the MKW35A512VFP4's ultra-low deep-sleep current and BLE 5.0 connectivity. The Cortex-M0+ core handles heart-rate, SpO2 or motion-sensor fusion algorithms in firmware while BLE transmits encrypted data to a smartphone or hub. Integrated DC-DC operation from coin cells extends battery life, and AES-128 hardware ensures HIPAA-friendly encrypted links. The 40-VFQFN exposed-pad package's small footprint allows discreet placement in wristbands, patches and chest straps.
Recommandé
Smart Home and Building Automation Hubs
BLE 5.0 mesh and beacons are increasingly common in smart-home products, and the MKW35A512VFP4 integrates the radio plus application MCU in a single device, ideal for BLE mesh light switches, occupancy sensors and HVAC controllers. The 512 KB Flash accommodates NXP's BLE mesh and beacon libraries, while 64 KB SRAM handles node-provisioning state. With Generic FSK capability, the device can also implement proprietary sub-GHz-like 2.4 GHz links for legacy compatibility. The 40-VFQFN exposed-pad package simplifies wall-switch and ceiling-sensor designs where PCB area is tight.
Recommandé
Bluetooth Beacons and Asset Trackers
BLE 5.0 beacons for retail, logistics and indoor positioning benefit from the MKW35A512VFP4's small footprint, low BOM and reliable advertising performance. The Cortex-M0+ can run both iBeacon/Eddystone profiles and direction-finding firmware (AoA/AoD), enabling RTLS deployments where the asset tag transmits to angle-of-arrival locator hubs. The integrated DC-DC regulator runs from CR2032 coin cells for multi-year battery life. The exposed-pad package simplifies reflow onto compact beacon PCBs used in warehouses and retail shelves.
Recommandé
Remote Controls and Consumer HID Devices
BLE 5.0 is replacing proprietary RF in TV remotes, smart-speaker controllers and game controllers, and the MKW35A512VFP4 offers a single-chip solution with ARM Cortex-M0+ headroom for HID-class firmware plus BLE stack. The integrated 2.4 GHz radio delivers sufficient range for whole-home remotes, while deep-sleep modes extend battery life to multi-year levels on standard AAA cells. The 40-VFQFN exposed-pad package is small enough for slim remote-control housings and supports standard PCB reflow/reedering. Kinetis SDK examples simplify HID-over-GATT profile development.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MKW35A512VFP4 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MKW35Z512VFP4 | MKW36A512VFP4 | MKW36A512VFP4R | MKW34A512VFP4 |
|---|---|---|---|---|---|
| Package | 40-VFQFN Exposed Pad | 40-VFQFN Exposed Pad - same | 40-VFQFN Exposed Pad - same | 40-VFQFN Exposed Pad - same | 40-VFQFN Exposed Pad - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Wireless Protocol | BLE 5.0 + Generic FSK | BLE 5.0 + Generic FSK | BLE 5.0 + 802.15.4 (Thread/Zigbee) | BLE 5.0 + 802.15.4 (Thread/Zigbee) | BLE 5.0 + Generic FSK |
| Flash Memory | 512 KB | 512 KB | 512 KB | 512 KB | 256 KB |
| SRAM | 64 KB | 64 KB | 64 KB | 64 KB | 64 KB |
| CPU Core | ARM Cortex-M0+ @ 48 MHz | ARM Cortex-M0+ @ 48 MHz | ARM Cortex-M0+ @ 48 MHz | ARM Cortex-M0+ @ 48 MHz | ARM Cortex-M0+ @ 48 MHz |
| TX Output Power | Up to +8 dBm | Up to +8 dBm | Up to +8 dBm | Up to +8 dBm | Up to +8 dBm |
| Integrated DC-DC | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Pure BLE 5.0 silicon without 802.15.4 overhead (vs MKW36A512VFP4)
- Full 512 KB Flash versus 256 KB cost-down variant (vs MKW34A512VFP4)
- NXP AEC-Q100 family pedigree for automotive (vs MKW36A512VFP4R)
Notes de conception
The MKW35A512VFP4 integrates the 2.4 GHz matching network and DC-DC converter on-chip, but PCB layout still requires a 50-ohm controlled-impedance feed to the antenna, a continuous ground plane beneath the antenna trace, and the exposed thermal pad soldered to a large copper pour for RF and thermal performance. Decoupling caps must be placed as close as possible to VDD/VREFH pins. Follow the reference layout in NXP application note AN11650 to maintain radiated performance and pass regulatory certifications (FCC, CE, ETSI).
Estimated: at full +8 dBm TX duty cycle the part dissipates roughly 100-150 mW peak; the 40-VFQFN exposed-pad package provides a junction-to-ambient thermal resistance of about 25-30 C/W on a JEDEC 4-layer test board. For continuous TX at +8 dBm, ensure the exposed pad is soldered to at least 50 mm^2 of copper and avoid placing the antenna trace directly over the IC. For typical BLE sensor duty cycles (TX <1%), no additional heatsinking is required.
Do not place ferrite beads or inductors in series with VDD without consulting the reference design - the integrated DC-DC requires specific capacitor values on VOUT_DCDC. Pin 1 VDD input must be bypassed with a 1 uF and 0.1 uF capacitor pair. MSL 3 handling is required - parts stored outside dry-pack conditions must be baked at 125 C for 24 hours before reflow. Failure to connect the exposed thermal pad to ground can degrade both RF output power and EMC performance.
Informations de conformité
RoHS compliant per NXP product page. MSL 3 handling required per JEDEC J-STD-020. AEC-Q100 qualified family for automotive applications. Terminal finish e4 (NiPdAu) per JESD-609.
