MMG3013NT1 - 0-6 GHz, 20 dB, InGaP HBT RF Amplifier | NXP
Référence : MMG3013NT1 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.93 | $2,93 |
| 10 | $2.64 | $26,40 |
| 100 | $2.35 | $235,00 |
| 500 | $2.11 | $1 055,00 |
| 1 000 | $1.88 | $1 880,00 |
MMG3013NT1 Présentation
An InGaP HBT amplifier is a type of RF/microwave transistor amplifier that uses a heterojunction between InGaAs and GaAs to achieve excellent linearity, low phase distortion, and reliable single-supply operation. In the broader RF signal-chain taxonomy, MMG3013NT1 sits in the gain-block / driver amplifier tier, above LNAs (low-noise amplifiers) and below power amplifiers (PAs), forming part of the power management and signal conditioning chain between the transceiver IC and the antenna or downstream mixer. InGaP HBT technology also enables high ruggedness and stable performance over temperature.
Key features include 20 dB small-signal gain, +20.5 dBm output P1dB, broadband 50 ohm input and output matching that eliminates external matching networks, and high linearity suitable for Class A operation. The SOT-89-4 footprint provides good thermal dissipation for the 5 V / 90 mA bias point, allowing sustained small-signal drive without active cooling. These characteristics reduce BOM count, simplify PCB layout, and shorten design cycles compared to discrete transistor amplifier designs that require external bias and matching components.
The amplifier is internally biased, internally prematched, and designed for high-linearity small-signal operation from DC up to 6 GHz. This makes it well suited to multi-band radio designs where a single broadband gain stage replaces multiple narrowband amplifiers, simplifying RF signal chains and lowering total solution size.
Typical applications include cellular/PCS/WLL base-station driver stages, IF/RF buffers in test instrumentation, CATV distribution line amplifiers, broadband front-end gain blocks for SDR (software-defined radio) platforms, and general-purpose 50 ohm RF signal conditioning. Designers should confirm the 5 V supply and DC-coupling arrangement, observe proper RF layout (ground vias under the thermal pad, 50 ohm controlled-impedance lines), and avoid exceeding the absolute maximum ratings on input RF drive and supply voltage.
This page synthesizes distributor pricing, datasheet specifications, and engineering drop-in alternatives not collected in a single place by the manufacturer datasheet alone.
Alternatives de remplacement direct pour MMG3013NT1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MMG3014NT1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
SKY65050-372LF
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
RF5110G
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MMG3013NT1 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MMG3013NT1 |
| RF Type | Cellular, PCS, PHS, WLL / General Purpose Amplifier |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) |
| Frequency Range | 0 Hz to 6000 MHz (0 to 6 GHz) |
| Small-Signal Gain | 20 dB (typical) |
| Output P1dB | 20.5 dBm |
| Tension d'alimentation | 5 V |
| Courant d'alimentation | 90 mA |
| Input / Output Matching | Internally matched to 50 ohm |
| Class of Operation | Class A, small-signal, high linearity |
| Boîtier / Format | SOT-89-4 (TO-243AA) |
| Type de montage | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Operating Mode | General-purpose broadband amplifier |
Configuration des broches de MMG3013NT1
| Broche 1 | RF IN — RF input (internally matched to 50 ohm) |
| Broche 2 | GND — Ground |
| Broche 3 | RF OUT / Vcc — RF output and DC supply (5 V) |
| Broche 4 | GND / NC — Ground or no-connect per datasheet; thermal pad connects to GND |
Applications typiques
MMG3013NT1 convient pour 6 applications: Cellular / PCS Base Station Driver Stage, CATV Distribution Line Amplifier, Software-Defined Radio (SDR) Front-End, Test & Measurement Equipment IF/RF Buffer, WLL / Fixed Wireless Access Equipment, General-Purpose 50 ohm RF Signal Conditioning.
Cellular / PCS Base Station Driver Stage
The MMG3013NT1 fits cellular and PCS base-station driver stages because its 0 to 6 GHz bandwidth covers all major sub-6 GHz cellular bands (GSM, DCS, PCS, LTE) while the +20.5 dBm P1dB provides the linearity headroom required for driver duty before a final power amplifier. Placed between the transceiver output and the PA input with standard 50 ohm traces, the internal matching eliminates external networks and the 5 V / 90 mA bias simplifies power-tree design. Compared to a discrete BJT amplifier, the InGaP HBT process offers better phase distortion and gain flatness across temperature.
Recommandé
CATV Distribution Line Amplifier
The MMG3013NT1 is well suited to CATV distribution line amplifiers because of its DC to 6 GHz bandwidth, which covers the forward-path CATV spectrum (54 to 1002 MHz) plus headroom for upstream and MoCA bands. The 20 dB gain compensates for splitter and cable losses at each distribution node, while +20.5 dBm P1dB supports multi-channel composite power delivery. Internally matched 50 ohm ports allow direct insertion into a 75 ohm-to-50 ohm matching network without on-board RF tuning, reducing per-node BOM cost across a CATV plant.
Recommandé
Software-Defined Radio (SDR) Front-End
The MMG3013NT1 serves as a broadband gain block in SDR front ends where a single amplifier must cover multiple tuning bands without band-switched matching networks. Its 0 to 6 GHz response accommodates HF, VHF, UHF, and microwave SDR tuners used in test equipment, spectrum analyzers, and cognitive-radio prototypes. The 20 dB gain boosts the ADC or mixer input by 100x in voltage terms, while the 20.5 dBm P1dB protects against out-of-band blocker compression. The SOT-89-4 footprint enables dense front-end layouts where size, weight, and power are constrained.
Recommandé
Test & Measurement Equipment IF/RF Buffer
The MMG3013NT1 is appropriate as an IF/RF buffer in test and measurement instruments because its broadband response and 50 ohm matched ports allow it to drop into standard lab bench setups and ATE fixtures. The 20 dB gain compensates for fixture and cable losses between the DUT and the measurement instrument, while the 20.5 dBm P1dB supports signal levels needed for ACPR and EVM measurements on modern wireless standards. Internal matching eliminates calibration drift associated with external matching components.
Recommandé
WLL / Fixed Wireless Access Equipment
The MMG3013NT1 supports WLL (Wireless Local Loop) and fixed-wireless-access CPE equipment where 5 GHz UNII bands overlap its 0 to 6 GHz range. Its high-linearity Class A bias delivers clean signal amplification for both licensed-band MMDS and unlicensed-band FWA links, where spectral mask compliance depends on amplifier linearity. The +20.5 dBm P1dB output allows the part to drive a downstream PA or be used directly as the final stage in low-power CPE links, all from a single 5 V supply that simplifies remote-site powering.
Recommandé
General-Purpose 50 ohm RF Signal Conditioning
The MMG3013NT1 serves as a universal 50 ohm RF signal conditioner in laboratory breadboards, evaluation modules, and OEM RF subsystems where a simple, broadband amplifier is needed between functional blocks. Its DC to 6 GHz coverage and internal matching make it ideal as a buffer between mixers, filters, ADCs, and DACs without requiring per-band tuning. The 20 dB gain and 20.5 dBm P1dB make it a strong general-purpose building block for prototype RF signal chains where predictable, datasheet-characterized performance accelerates bring-up.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MMG3013NT1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MMG3014NT1 | SKY65050-372LF | RF5110G |
|---|---|---|---|---|
| Package | SOT-89-4 (TO-243AA) | SOT-89-4 (TO-243AA) - same | SOT-89-4 - same | SOT-89-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | Skyworks Solutions | Qorvo |
| Technology | InGaP HBT | InGaP HBT | SiGe HBT | GaAs HBT |
| Lifecycle Status | Obsolete | Active (verify) | Active | Active |
Principaux différenciateurs
- Internally matched 50 ohm RF ports (vs Discrete BJT transistor amplifiers)
- Broadband 0 to 6 GHz coverage in a single stage (vs Narrowband tuned amplifiers)
- InGaP HBT technology for high linearity (vs SiGe HBT or GaAs MESFET amplifiers)
Notes de conception
Maintain 50 ohm controlled-impedance traces (typically microstrip or grounded coplanar waveguide) on both RF IN and RF OUT output pins. Place RF decoupling capacitors (100 pF in parallel with 0.1 nF and 10 nF) as close as possible to the Vcc pin to suppress supply-borne noise. Provide multiple ground vias directly under the SOT-89 thermal pad to minimize ground inductance and ensure stable bias.
Estimated: at 5 V supply and 90 mA quiescent current, the MMG3013NT1 dissipates approximately 0.45 W DC. The SOT-89-4 thermal pad provides adequate heat spreading for continuous Class A operation, but in enclosed housings or above +85 C, verify junction temperature against the NXP datasheet thermal resistance specifications. Add copper pour connected to the exposed pad to enhance dissipation if the part is used near full P1dB.
Do not exceed the absolute maximum input RF drive level specified in the NXP datasheet; the InGaP HBT die can be damaged by overdrive. Avoid DC voltage on the RF IN pin - use a DC-blocking capacitor if the upstream stage has a DC offset. Confirm the supply voltage is clean (less than 50 mVpp ripple) - the amplifier's high linearity assumes a low-noise 5 V rail. Do not substitute this part in circuits designed for different pinout conventions without verifying against the official NXP pinout diagram.
Informations de conformité
RoHS and lead-free per NXP product page. AEC-Q100 not applicable (RF amplifier IC, not automotive-qualified). MSL rating and full material declaration available in NXP datasheet.
