MRF21010LR1 - 10W, 28V RF Power MOSFET | NXP Semiconductors
Référence : MRF21010LR1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $41.62 | $41,62 |
| 10 | $37.5 | $375,00 |
| 100 | $33.2 | $3 320,00 |
| 500 | $30.1 | $15 050,00 |
| 1 000 | $27.85 | $27 850,00 |
MRF21010LR1 Présentation
An RF power MOSFET is a specialized transistor optimized for radio-frequency amplification, sitting in the power-management hierarchy between small-signal RF FETs and conventional power MOSFETs. Lateral devices such as the MRF21010LR1 use a planar, laterally-diffused drain-source structure, which minimizes parasitic capacitances and enables operation well into the multi-GHz range, unlike vertical DMOS parts that are bandwidth-limited by output capacitance. In system terms, the MRF21010LR1 belongs to NXP's heritage Motorola RF MOSFET line, now a foundational part of the cellular-infrastructure power amplifier (PA) chain.
Key specifications include a 28 V typical drain-source operating voltage, 10 W CW output power capability, and a 100 mA quiescent drain current at bias. The NI-360 ceramic package provides a low thermal resistance path to the system heat sink and supports the high peak junction temperatures encountered in W-CDMA bursts. Internal matching simplifies board-level integration into 50 Ω amplifier circuits.
The part is fabricated on a high-voltage lateral MOSFET process, achieving simultaneously high breakdown, low feedback capacitance, and excellent intermodulation performance. Its broadband response also makes it suitable for FM, TDMA, CDMA, and multicarrier amplifier applications beyond pure W-CDMA.
Typical applications include W-CDMA base-station power amplifiers, PCN/PCS/cellular radio front ends, WLL (wireless local loop) transmitter chains, and multicarrier driver stages. The same die is offered as MRF21010LSR1 in a different flange-mount variant for chassis-mount designs.
When designing with the MRF21010LR1, ensure the 50 Ω input/output matching networks are realized on the lowest-loss substrate available (Rogers RO4003 or equivalent), and that the drain bias feed is well bypassed with a quarter-wave stub to suppress out-of-band gain peaking.
This page synthesizes distributor pricing, drop-in alternatives, and practical RF design notes not found in the raw datasheet PDF, enabling rapid part evaluation for cellular PA and broadband driver designs.
Alternatives de remplacement direct pour MRF21010LR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF21010LSR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF21010R1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF21045LR1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF21010LR1 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP USA Inc. (formerly Freescale/Motorola) |
| Part Family | MRF21010 RF Power MOSFET line |
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDS) | 28 V (typical operating) |
| Output Power (POUT) | 10 W (CW) |
| Frequency Range | 2110 MHz to 2170 MHz (W-CDMA band) |
| Power Gain | 13.5 dB (typical) |
| Quiescent Drain Current | 100 mA |
| Boîtier | NI-360 (ceramic, flange-mount) |
| Type de montage | Chassis/Surface Mount (flange) |
| Configuration | Single, common-source |
| Class of Operation | Class AB |
| Technology | Lateral MOSFET (high-voltage) |
| Application | W-CDMA base station, PCN/PCS, WLL |
Configuration des broches de MRF21010LR1
| Broche 1 | Gate — RF input gate terminal (DC bias + RF drive) |
| Broche 2 | Drain — RF output + 28 V DC supply (high-voltage terminal) |
| Broche 3 | Source — Source terminal on conductive flange; also serves as thermal ground |
Zone de fonctionnement sûr - MRF21010LR1
Applications typiques
MRF21010LR1 convient pour 6 applications: W-CDMA Base Station Power Amplifier (2110-2170 MHz), PCN/PCS Cellular Radio Driver Stage, WLL (Wireless Local Loop) Transmitter, Multicarrier Amplifier (MCPA) Driver, CDMA/CDMA2000 Linear Power Stage, TDMA/FM Driver Amplifier.
W-CDMA Base Station Power Amplifier (2110-2170 MHz)
The MRF21010LR1's 10 W CW output at 2170 MHz with 13.5 dB gain and 28 V Class AB operation make it the headline NXP part for W-CDMA base-station final or driver PA stages. The lateral MOSFET structure provides the high linearity that 3GPP ACPR and spectral mask specifications require, while the 2110-2170 MHz native band eliminates the need for extensive output matching. Placed between the preceding gain block and the duplexer with 50 Ω microstrip traces on Rogers RO4003, it delivers the 10 W peak power envelope that macro-cell radios need while keeping DC-RF efficiency within thermal budget.
Recommandé
PCN/PCS Cellular Radio Driver Stage
For PCN (1800 MHz) and PCS (1900 MHz) cellular base-station radios where 10 W driver stages feed higher-power final PAs, the MRF21010LR1 offers broadband 13.5 dB gain and 10 W output with stable Class AB operation at 28 V. Its lateral N-channel enhancement-mode MOSFET structure handles the high peak-to-average ratios of TDMA and CDMA waveforms, and the NI-360 ceramic package provides the thermal headroom required for 100% duty-cycle voice and data traffic. Designers typically use it as the second-stage driver, biased at 100 mA quiescent drain current for linearity margin above the 3GPP spectral mask.
Recommandé
WLL (Wireless Local Loop) Transmitter
In WLL equipment that delivers voice and data services to fixed subscribers, the MRF21010LR1 functions as the 10 W final PA in the 2110-2170 MHz transmitter chain. The NXP lateral MOSFET design provides the ruggedness required for outdoor fixed wireless installations, with broadband response that simplifies multi-standard support (W-CDMA, CDMA, TDMA). Its 28 V supply and 100 mA idle current draw are compatible with -48 V telecom DC plant when used with a 28 V regulator, and the NI-360 flange package bolts directly to the sealed-cavity heat sink mandated by outdoor radio enclosures.
Recommandé
Multicarrier Amplifier (MCPA) Driver
For multicarrier power amplifier (MCPA) modules in cellular base stations where multiple W-CDMA carriers are combined into a single broad-band PA, the MRF21010LR1 serves as a 10 W linear driver stage to the higher-power final amplifier. According to the NXP datasheet, its broadband frequency response and high linearity at 28 V make it tolerant of intermodulation distortion (IMD) products generated when several W-CDMA carriers share the same chain. Placed before the final LDMOS or GaN stage with ferrite-based inter-stage matching, the MRF21010LR1 helps MCPA designers meet spectral regrowth requirements while preserving per-carrier power accuracy.
Recommandé
CDMA/CDMA2000 Linear Power Stage
The MRF21010LR1 is well-suited to CDMA and CDMA2000 base-station transmitter output stages, where 13.5 dB power gain and 10 W linear output at 2110-2170 MHz meet the linearity requirements of IS-95/1xEV-DO reverse-link budgets. Its 28 V N-channel lateral MOSFET architecture from the NXP MRF21010 datasheet keeps OIP3 high enough to manage the 4-6 dB peak-to-average ratios of CDMA waveform envelopes, while the NI-360 flange package supports continuous thermal dissipation at base-station duty cycles. Typical circuits bias the part at 28 V with 100 mA quiescent drain current for class AB linear operation.
Recommandé
TDMA/FM Driver Amplifier
Outside its primary W-CDMA role, the MRF21010LR1 functions as a broadband driver in TDMA and FM transmitter chains operating in the 2110-2170 MHz range. According to the NXP datasheet, the lateral enhancement-mode MOSFET's broadband response makes it tolerant of varying modulation formats without retuning, simplifying multi-standard base-station architectures. The 13.5 dB typical gain reduces the gain burden on preceding small-signal RF stages, and the NI-360 ceramic package bolts directly to chassis heat sinks for sealed or outdoor deployments common in point-to-multipoint radios.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF21010LR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF21010LSR1 | MRF21010R1 | MRF21045LR1 |
|---|---|---|---|---|
| Brand | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. |
| Package | NI-360 (standard) | NI-360 (alternate flange) | NI-360 (standard) | NI-360 |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Output Power | 10 W | 10 W | 10 W | 45 W |
| Drain Voltage (VDS) | 28 V | 28 V | 28 V | 28 V |
| Transistor Type | N-Channel Lateral MOSFET | N-Channel Lateral MOSFET | N-Channel Lateral MOSFET | N-Channel Lateral MOSFET |
| Class of Operation | Class AB | Class AB | Class AB | Class AB |
| Primary Application | W-CDMA base station, PCN/PCS, WLL | W-CDMA base station, PCN/PCS, WLL | W-CDMA base station, PCN/PCS, WLL | W-CDMA multi-carrier PAs |
Principaux différenciateurs
- Same-package family with alternate mechanical variant available (vs MRF21010LSR1)
- Higher-power upgrade path within the same NI-360 footprint family (vs MRF21045LR1)
- Originates from Motorola heritage RF MOSFET line, now NXP (vs Modern LDMOS/ GaN PAs)
Notes de conception
Estimated: At a 10 W CW output with 28 V VDS and ~50% DC-RF efficiency under W-CDMA drive, the MRF21010LR1 dissipates approximately 10-12 W of waste heat. The NI-360 ceramic flange must be bolted to a heat sink with thermal compound (Wakefield 120 series or equivalent) to keep junction temperature below 200 C. Designers should size the heat sink for at least 1 C/W thermal resistance to ambient for continuous 10 W CW operation in sealed outdoor enclosures, given the part's intended base-station duty cycle.
Use Rogers RO4003C or RO4350B substrate (not standard FR-4) at 2110-2170 MHz to minimize dielectric loss. The input and output microstrip lines must be 50 Ω controlled-impedance and routed directly between the gate pad, drain pad, and the SMA connectors with no stubs. Place the 28 V drain bias feed on a quarter-wave stub with a 100 nF chip capacitor at the drain pad for proper DC isolation and out-of-band gain suppression.
Do not bias the MRF21010LR1 at VDS above 28 V without confirming the breakdown margin in the NXP datasheet - exceeding the absolute maximum can cause thermal runaway even at low quiescent current. Apply gate bias AFTER drain bias is established, and remove gate bias BEFORE drain bias during shutdown sequencing to avoid forward-biasing the gate-source junction. Confirm the source flange is truly grounded (low-inductance bond to chassis) to prevent parasitic oscillation in the UHF band.
Add a small resistor (2-10 ohm) in series with the gate to suppress VHF parasitic oscillations that can appear at high gain with mismatched loads. Per NXP evaluation notes, a ferrite bead on the 28 V drain feed (Murata BLM series at the pad) helps isolate the RF output from supply rail resonances. Keep the gate bias line orthogonal to the RF path to minimize coupling and instabilities at the upper end of the 2110-2170 MHz band.
Informations de conformité
Compliance data not provided in the verified web data; RoHS status of the NI-360 ceramic package and lead content should be confirmed against NXP's material declaration sheets before placing volume orders.
