MRF21060R3 - 60W, 2.1GHz RF Power MOSFET | Freescale Semiconductor
Référence : MRF21060R3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $89.5 | $895,00 |
| 50 | $84 | $4 200,00 |
| 100 | $78.5 | $7 850,00 |
| 500 | $72 | $36 000,00 |
MRF21060R3 Présentation
RF power MOSFETs are specialized transistors built to deliver high RF output power at microwave frequencies with high gain and efficiency. Lateral N-channel MOSFETs place the source, gate, and drain laterally on the silicon surface, which reduces parasitic capacitances compared to vertical DMOS structures and yields higher gain at UHF and microwave frequencies. The MRF21060R3 belongs to the RF power transistor hierarchy: transistor -> MOSFET -> RF MOSFET -> lateral N-channel RF power MOSFET -> semiconductor device.
Key specifications include 60 W CW output power, 28 V drain supply, 500 mA quiescent drain current, 12.5 dB power gain at 2.1 GHz, and operation across 2.1 to 2.2 GHz. The device is designed for W-CDMA, CDMA, TDMA, GSM, and multicarrier amplifier applications. Its lateral geometry provides consistent gain-bandwidth product across the 2.1 to 2.2 GHz operating window, and internal matching networks simplify PCB integration in push-pull or single-ended final stages.
The MRF21060R3 is built for base station power stages where linearity and ruggedness are equally important. Freescale's laterally-diffused MOSFET (LDMOS) variant of this family supports high peak-to-average ratios required by modern digital modulation schemes. The NI-780H package offers a ceramic flange with a low thermal resistance path, enabling reliable 60 W CW operation at typical cellular base station duty cycles.
Typical applications include W-CDMA/UMTS base station final stages, PCS/personal communications network power amplifiers, multicarrier GSM/EDGE amplifier modules, and 2.1-2.2 GHz RF power blocks for repeaters and small-cell infrastructure. The part also serves in defense and aerospace telemetry links operating within the same band.
When designing with this part, ensure the device is biased into Class AB at the rated 500 mA quiescent current for the best linearity/efficiency trade-off. The ceramic flange requires a properly torqued heatsink with thermal compound to maintain junction temperature below the rated 200 C maximum.
This page synthesizes distributor availability, drop-in alternatives drawn from the same NI-780 family, and applied design notes that go beyond the bare datasheet to accelerate your base-station PA design.
Alternatives de remplacement direct pour MRF21060R3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF21060SR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF21060
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF21060R3 Valeurs maximales et caractéristiques électriques
| Type de transistor | Lateral N-Channel RF Power MOSFET |
| Frequency Range | 2.1 GHz to 2.2 GHz |
| Test Frequency | 2170 MHz |
| Output Power (CW) | 60 W |
| Drain-Source Voltage (VDSS) | 28 V (typical operating drain supply) |
| Power Gain | 12.5 dB typical at 2.1 GHz |
| Quiescent Drain Current | 500 mA |
| Boîtier / Format | NI-780H-2L (CASE 465-06, STYLE 1) |
| Type de montage | Chassis / Flange Mount (ceramic) |
| Application | PCN/PCS base station, W-CDMA, CDMA, TDMA, GSM multicarrier amplifiers |
| Technology | Lateral MOSFET (LDMOS family) |
| Manufacturer | Freescale Semiconductor (formerly Motorola Semiconductor) |
| Datasheet Document Size | 550 KB, 8 pages |
Configuration des broches de MRF21060R3
| Broche 1 | Drain — RF output / DC drain supply (case-flange is the drain reference in NI-780H-2L) |
| Broche 2 | Gate — RF input / DC gate bias |
| Broche 3 | Source — Source / ground (connected to flange) |
| Broche CASE | Flange — Mounting flange and electrical ground (CASE 465-06 STYLE 1) |
Zone de fonctionnement sûr (estimated envelope)
Applications typiques
MRF21060R3 convient pour 6 applications: W-CDMA/UMTS Base Station Final Stage, PCS 1.9 GHz / 2.1 GHz Power Block, Multicarrier GSM/EDGE Amplifier, CDMA2000 Base Station PA, Repeater and Small-Cell Infrastructure, Defense/Aerospace Telemetry Link PA.
W-CDMA/UMTS Base Station Final Stage
The MRF21060R3's 60 W CW output at 2.1-2.2 GHz and 12.5 dB typical gain make it a strong fit for macro-cell W-CDMA final PA stages. Per the Freescale datasheet, typical W-CDMA performance is specified at 2140 MHz, the centre of the UMTS downlink band. With 28 V operation and Class AB bias at 500 mA quiescent current, the device delivers the linearity required for high peak-to-average-ratio signals while keeping DC-RF efficiency high. Its NI-780H-2L flange allows direct attachment to a base-station heatsink, simplifying thermal management. For sub-60 W micro-cell sites it can also be back-off operated.
Recommandé
PCS 1.9 GHz / 2.1 GHz Power Block
Designed for PCN and PCS base station applications per the manufacturer datasheet, the MRF21060R3 covers 2.1-2.2 GHz with a 60 W CW rating. In a single-ended final stage, it produces sufficient linear power for personal communications network base stations. The lateral N-channel structure delivers the gain bandwidth required to span the PCS/UMTS allocation with a single transistor, reducing BOM complexity. Drop-in NI-780H-2L package compatibility with other family members lets designers reuse the same heatsink and lead-frame layout across PCS and UMTS SKUs.
Recommandé
Multicarrier GSM/EDGE Amplifier
The MRF21060R3 is explicitly characterised for multicarrier amplifier applications by Freescale, including GSM and TDMA waveforms. Its 60 W CW rating and 12.5 dB gain provide headroom for combining multiple GSM carriers through a single final device, while the lateral MOSFET process preserves linearity across the 100 MHz operating window. With 28 V drain operation and 500 mA quiescent bias, the part runs in Class AB for the best linearity/efficiency compromise needed for GMSK and 8-PSK edges.
Recommandé
CDMA2000 Base Station PA
Freescale specifies the MRF21060R3 for CDMA amplifier applications in the 2.1-2.2 GHz band, where linearity at high peak-to-average ratios is essential. The 12.5 dB typical gain at 2.1 GHz enables driver-stage simplicity, while the 60 W CW rating supports macro-cell output power budgets after output combiners and filters. The NI-780H-2L flange-mount package provides the rugged mechanical and thermal interface required for 24/7 base-station duty in CDMA2000 networks.
Recommandé
Repeater and Small-Cell Infrastructure
The MRF21060R3's compact 60 W rating fits naturally into the output PA of 2.1-2.2 GHz repeaters, picocells, and small-cell base stations where board area is constrained but linearity cannot be sacrificed. Operating from a single 28 V rail with 12.5 dB gain and 500 mA quiescent current, it supports Class AB linear amplification at reduced power with excellent back-off efficiency. The ceramic flange package gives small-cell RF designers a familiar, well-characterised thermal and RF interface that can be heatsunk directly to the chassis wall.
Recommandé
Defense/Aerospace Telemetry Link PA
Aerospace telemetry and unmanned-system datalinks frequently operate in the 2.1-2.2 GHz band, where the MRF21060R3's 60 W CW rating, 12.5 dB gain, and rugged NI-780H-2L flange are advantageous. Per the Freescale datasheet the device tolerates the high VSWR conditions seen in airborne installations while still delivering linear output for telemetry modulation formats. Its 28 V supply rail matches standard airborne 28 VDC power buses, reducing power-conversion complexity in SWaP-constrained platforms.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF21060R3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF21060SR3 | MRF21060 |
|---|---|---|---|
| Brand | Freescale Semiconductor | Freescale Semiconductor | Freescale Semiconductor |
| Package | NI-780H-2L (CASE 465-06, STYLE 1) | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same |
| Output Power (CW) | 60 W | 60 W | 60 W |
| Frequency Range | 2.1 to 2.2 GHz | 2.1 to 2.2 GHz | 2.1 to 2.2 GHz |
| Power Gain | 12.5 dB typical | 12.5 dB typical | 12.5 dB typical |
| Drain Supply Voltage | 28 V | 28 V | 28 V |
| Quiescent Drain Current | 500 mA | 500 mA | 500 mA |
| Application | PCN/PCS base station, W-CDMA, CDMA, TDMA, GSM | PCN/PCS base station, W-CDMA, CDMA, TDMA, GSM | PCN/PCS base station, W-CDMA, CDMA, TDMA, GSM |
Principaux différenciateurs
- Member of the same broad CASE III/II family as the MRF21060SR3 (vs MRF21060SR3)
- Family-level parametrisation beyond the bare variant (vs MRF21060)
Notes de conception
Estimated: at 60 W output and ~50 percent DC-RF efficiency, roughly 60 W of dissipation must be sunk. Mount the NI-780H-2L flange to a flat aluminium or copper spreader with thermal compound, torque the mounting screws per the CASE 465-06 outline, and confirm junction temperature stays below 200 C at worst-case ambient (typically 85 C for outdoor base-station equipment).
Keep the gate and drain matching networks short and use 50 ohm microstrip or stripline. Place the gate bias decoupling network (RFC + 100 nF + 10 uF) close to the gate lead, and use a high-Q RF choke on the drain to avoid degrading the 12.5 dB gain figure. Ground the source via the flange, not a separate source bond wire.
Do not exceed the rated 28 V drain supply or the 500 mA quiescent bias without re-derating SOA. Avoid running with the RF input disconnected - the MRF21060R3 expects a proper load match to maintain stability, and an open input can trigger parasitic oscillation. Confirm output load VSWR is within the datasheet limit before applying full RF drive.
Informations de conformité
RoHS, REACH, lead-free, and halogen-free status are not present in the provided datasheet extract and are marked [DATA_NEEDED]. AEC-Q100 is not applicable - this is an RF power MOSFET, not an automotive-qualified logic/analog IC.
