MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP
Référence : MRF5P21180HR5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $87.5 | $875,00 |
| 50 | $78.2 | $3 910,00 |
| 100 | $71.4 | $7 140,00 |
| 500 | $65 | $32 500,00 |
MRF5P21180HR5 Présentation
An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency, high-power operation in the 1-3 GHz range, where it dominates macro-cell base-station power amplifiers because of its high breakdown voltage, excellent linearity, and ease of impedance matching. Within the semiconductor taxonomy, this device sits at: LDMOS -> RF MOSFET -> power MOSFET -> discrete semiconductor. The MRF5P21180HR5 is positioned for Class-AB amplification of digitally modulated carriers, including TDMA, CDMA, and multicarrier W-CDMA waveforms.
Key differentiating features include 38 W average output power (P1dB-class for two-carrier W-CDMA), 14 dB power gain at 2.16 GHz, an internal ESD protection network, and a thermally enhanced NI-1230 ceramic package with a bolt-down flange for direct heatsink mounting. The device is rated for continuous-wave operation at 28 V VDD, with operating voltage up to 65 V transient on the drain.
The internal LDMOS die architecture places the source connections on the package flange to minimize common-source inductance, which directly improves broadband stability and gain at 2 GHz. NXP's 5th-generation LDMOS process integrates ESD diodes and a gate-source zener protection network on-die so the device tolerates routine handling and brief over-voltage events without external protection components. The matched input and output impedances are documented in the manufacturer datasheet for Doherty and single-ended PA topologies.
Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE Band 7 (uplink 2500-2690 MHz is a stretching use case, primary 2110-2170 MHz), TDMA and CDMA driver stages, multicarrier amplifier (MCPA) final stages, and Class-AB pulsed-RF amplifiers for defense radar and avionics. The 38 W envelope supports small-cell and micro-cell final stages as well as repeater PA lineups.
When designing with this part, provide 50 ohm microstrip or stripline transitions to the input gate and output drain pads, place 100-1000 pF decoupling capacitors within 5 mm of the drain pad, and mount the flange to a copper or aluminum heatsink with thermal grease. Always run the gate at a negative bias (typically -3 V) for Class-AB operation, and use a gate-decay sequence to prevent thermal runaway during high-CW operation.
This page synthesizes distributor pricing snapshots, drop-in alternates from the same NXP RF power family, and practical thermal/PCB guidance not collated in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MRF5P21180HR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF5P21180HR5 (même facteur de forme et même empreinte) — différant par Mounting Type, Package / Case, Power Gain, Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5P21180H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5P21180
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5P21210HR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF6P21190HR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$65 / unité
Voir la fiche technique →MRF5P21180HR5 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF5P21180 |
| Type de transistor | LDMOS (Laterally Diffused MOSFET), N-Channel |
| Technology | Lateral N-Channel RF Power MOSFET |
| Drain-Source Voltage (VDS) Rated | 65 V |
| Operating Drain Voltage (Test) | 28 V |
| Test Frequency | 2.16 GHz |
| Operating Frequency Range | 2110 MHz to 2170 MHz (W-CDMA band) |
| Output Power (Pout, CW or Avg) | 38 W |
| Power Gain | 14 dB at 2.16 GHz |
| Quiescent Current (Idq) at Test | 1.6 A |
| Boîtier / Format | NI-1230 (5-pin ceramic flange-mount) |
| Type de montage | Chassis / Flange Mount (bolt-down) |
| Operating Mode | Class AB, single-ended or Doherty |
| Modulation Support | W-CDMA, TDMA, CDMA, multicarrier |
| Lead Free / RoHS | Lead Free (per distributor listings) |
Configuration des broches de MRF5P21180HR5
| Broche 1 | Gate — RF input gate; requires negative bias for Class-AB (typically -2.7 to -3.5 V) |
| Broche 2 | Drain — RF output drain; 28 V VDD supply via bias-T or drain feed |
| Broche 3 | Source — Source RF ground; tied internally and externally to the mounting flange |
| Broche 4 | Drain (sense) / NC — Drain-sense or no-connect per NI-1230 outline (verify with datasheet outline) |
| Broche 5 | Flange (Source/GND) — Mounting flange; primary thermal path and RF ground; bolt to heatsink |
MRF5P21180HR5 Zone de fonctionnement sûr (DC, illustrative)
Applications typiques
MRF5P21180HR5 convient pour 6 applications: W-CDMA / UMTS Macro-Cell Base-Station Power Amplifier, Multicarrier Power Amplifier (MCPA) Final Stage, LTE Band 7 Small-Cell / Picocell PA, Pulsed-RF Amplifier for Avionics / Radar, Repeater / Booster PA Lineup, Industrial RF Heating / Drying Amplifier.
W-CDMA / UMTS Macro-Cell Base-Station Power Amplifier
The MRF5P21180HR5 is purpose-built for 2110-2170 MHz W-CDMA base-station final stages. Its 38 W average Pout, 14 dB power gain, and 28 V operation align with Class-AB driver and output stages in 2-carrier W-CDMA lineups. The 1.6 A Idq recommended setting keeps the device in a linear region suitable for high-PAPR W-CDMA signals, while the NI-1230 ceramic flange provides the thermal headroom required for continuous downlink duty cycles. In a typical macro-PA chain it sits between a smaller LDMOS driver (e.g. MRF5P21045) and the output-combining network, accepting a few watts of drive and delivering tens of watts to the Doherty combiner or corporate combiner.
Recommandé
Multicarrier Power Amplifier (MCPA) Final Stage
In multicarrier W-CDMA / TD-SCDMA / CDMA2000 amplifier racks, the MRF5P21180HR5 acts as a single-ended final device. Its 38 W envelope handles 4-carrier composite power with back-off, while the 14 dB gain flattens the gain response across the 60 MHz W-CDMA band. Because LDMOS dominates in the 2 GHz MCPA market due to its linearity, the MRF5P21180HR5 is a natural fit for tower-top and ground-mounted MCPA chassis that drive a sector antenna through a band combiner.
Recommandé
LTE Band 7 Small-Cell / Picocell PA
Although Band 7 sits at 2500-2690 MHz, the MRF5P21180HR5's 2110-2170 MHz tuned network is often reused as the baseline PA for downlink small-cell platforms with retuned output matching. Its 38 W P1dB envelope and 14 dB gain support the small-cell output requirement after external attenuators and linearizers (DPD). The NI-1230 chassis-mount package keeps the small-cell thermal path compact, with the flange acting as both RF ground and heatsink in a sealed radio head.
Recommandé
Pulsed-RF Amplifier for Avionics / Radar
The MRF5P21180HR5's LDMOS structure tolerates pulsed-CW operation and the 65 V VDS rating provides margin for pulsed drain overshoot typical in avionics and radar PA chains. Used in L-band or slightly stretched 2 GHz pulsed drivers and finals, the device's 14 dB gain and Class-AB bias favor linear pulsed amplification. The 5-pin NI-1230 package is bolted to a chassis heatsink with thermal grease, and gate-bias is sequenced negative-first to control in-rush during pulse transitions.
Recommandé
Repeater / Booster PA Lineup
Cellular repeaters and signal boosters that amplify W-CDMA downlink signals rely on the MRF5P21180HR5 as a small-to-medium-power output stage. Its 38 W output drives the bandpass-filtered RF output before antenna coupling, and the 14 dB gain lets a low-level RF input from a small LNA chain reach full output with minimum stage count. The LDMOS linearity reduces intermodulation products inside the repeater chain, critical for indoor and tunnel repeaters where spectral regrowth is regulated.
Recommandé
Industrial RF Heating / Drying Amplifier
Industrial RF heating, drying, and plastic-welding systems operating near 2.17 MHz? No - more commonly near 27 MHz or 2.45 GHz, but the MRF5P21180HR5 is sometimes adapted as a continuous-wave power source for 2 GHz plasma and material-processing applications. Its continuous 38 W envelope, 65 V VDS ruggedness, and chassis-mount heatsink path make it attractive for OEM RF generator modules where the customer re-tunes the matching network to a non-cellular frequency.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5P21180HR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5P21180H | MRF5P21180 | MRF5P21210HR5 | MRF6P21190HR5 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230 (5-pin ceramic flange-mount) | NI-1230 (5-pin ceramic flange-mount) - same | NI-1230 (5-pin ceramic flange-mount) - same | NI-1230 (5-pin ceramic flange-mount) - same | NI-1230 (5-pin ceramic flange-mount) - same |
| Output Power (Pout) | 38 W | 38 W | 38 W | ~38 W | ~190 W pulsed |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz band-shifted | 2110-2170 MHz |
| Test Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 14 dB | 14 dB | 14 dB | ~14 dB | ~13 dB |
| VDS Rating (Max) | 65 V | 65 V | 65 V | 65 V | 65 V |
| Packaging Format | Tape & Reel (HR5) | Tray | Family root (no suffix) | Tape & Reel (HR5) | Tape & Reel (HR5) |
Principaux différenciateurs
- Long-running, broadly stocked NXP W-CDMA final stage (vs Older Fujitsu or Mitsubishi 2 GHz LDMOS parts)
- Integrated ESD and gate protection on-die (vs Discrete RF MOSFETs without on-die protection)
- NI-1230 flange tied to source for ultra-low common-source inductance (vs Plastic-package RF MOSFETs with bondwire source leads)
Notes de conception
Estimated: at 28 V VDD and 38 W Pout with ~50% drain efficiency, the MRF5P21180HR5 dissipates roughly 38 W of waste heat at full CW output. The NI-1230 flange must be bolted to a copper or aluminum heatsink with thermal grease (Wakefield 120 or equivalent). For continuous downlink duty, ensure the heatsink-to-ambient thermal resistance stays below 0.5 C/W to keep the junction below 150 C (typical 200 C max Tj). Forced-air cooling is recommended in sealed base-station chassis.
Use 50 ohm microstrip or stripline transitions on the gate and drain pads of the NI-1230 footprint. Keep all bypass capacitors (100 pF to 1000 pF) within 5 mm of the drain pad to minimize parasitic inductance. The gate bias line should be routed away from the drain feed and decoupled at both the device end and the bias-tee end with 10 kohm resistors to prevent VCO injection. Refer to the NXP reference design for exact substrate stack-up.
Always apply negative gate bias before applying drain voltage; otherwise the device can draw uncontrolled current and self-destruct. Confirm the drain feed has a sequencing circuit that holds drain off until Vgg reaches its negative setpoint. Do not exceed the 65 V VDS rating, including transient overshoot from the drain feed network. Use a 50 ohm resistive load during initial bring-up before connecting the antenna.
The NI-1230 flange is the primary RF ground; ensure the bolt holes are stitch-bonded to the ground plane with multiple vias to keep the source inductance below 0.1 nH. Place the input matching network as close as possible to the gate lead to preserve gain at 2.16 GHz. Avoid sharp bends in the drain feed trace - use curved or mitered transitions to minimize mismatch. Copper weight of 2 oz or heavier is recommended for the drain feed to handle 38 W continuous.
Informations de conformité
Per distributor listings (DigiKey, Jotrin) the MRF5P21180HR5 is lead-free and RoHS compliant. AEC-Q100 is not applicable for a chassis-mount RF power transistor; this is a base-station / industrial RF device, not an automotive-qualified part. Halogen-free status not verified from the provided data.
