MRF5S19130HR3 - 26W RF Power MOSFET 1.93-1.99GHz NI-880 | NXP
Référence : MRF5S19130HR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $78.5 | $78,50 |
| 10 | $72.4 | $724,00 |
| 100 | $64.9 | $6 490,00 |
| 500 | $58.2 | $29 100,00 |
| 1 000 | $52.75 | $52 750,00 |
MRF5S19130HR3 Présentation
What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically designed and characterized for high-frequency, high-power amplification rather than for low-frequency switching. It sits at the top of the discrete-semiconductor hierarchy, above small-signal MOSFETs, and is a member of the broader power-transistor family alongside LDMOS, GaN HEMT, and bipolar RF devices. LDMOS in particular dominates cellular base-station PA output stages because it offers high gain, reasonable efficiency, and mature, low-cost silicon fabrication.
Key specifications cited by NXP include: 28 V drain supply, 13 dB typical power gain under 2 x N-CDMA drive, 26 W average output power, and a frequency range of 1930-1990 MHz. The lateral N-channel architecture enables high breakdown and broadband RF performance in a hermetic NI-880H ceramic flange package with a metalized ceramic body that bolts directly to a heatsink. The device is rated for 65 V V(DSS) and is built with internal input matching for ease of amplifier design.
The MRF5S19130HR3 uses Freescale's (now NXP) 7th-generation or later lateral N-channel LDMOS process, which combines low on-resistance per unit die area with high gain at 2 GHz and good ruggedness into severe output mismatch. The ceramic NI-880H-2L flange package provides a low-inductance common-drain connection via its mounting surface, which is essential for stable operation above 1.5 GHz.
Typical applications include PCN/PCS base-station PAs from 1930-1990 MHz, WLL and MMDS transmitters, 2-carrier N-CDMA driver stages, and multicarrier GSM/EDGE amplifier bricks. Designers also use the part in industrial RF heating and laboratory amplifiers that benefit from its 28 V bias and 26 W power rating.
When designing with this device, the heatsink flange must be kept below the maximum junction temperature by ensuring adequate airflow or conduction cooling, and the input circuit must present the impedance required by the datasheet's reference layout. Designers should also gate-bias the part with a regulated negative supply to set the quiescent Idq precisely per the recommended bias table.
This page synthesizes distributor pricing, drop-in ceramic-package alternatives, and practical design notes not found in the manufacturer datasheet, sourced directly from NXP's MRF5S19130H datasheet and live distributor inventory.
Alternatives de remplacement direct pour MRF5S19130HR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF5S19130HSR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19130R3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19130SR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19130HR5
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF5S19130HR3 Valeurs maximales et caractéristiques électriques
| Type de transistor | N-Channel Lateral LDMOS RF Power MOSFET |
| Drain-Source Voltage (V DSS) | 65 V |
| Operating Drain Voltage | 28 V nominal |
| Continuous Drain Current | 1.2 A (typical RF operating) |
| Output Power (Average) | 26 W at 2 x N-CDMA, 1930-1990 MHz |
| Frequency Range | 1930 MHz to 1990 MHz (usable 1900-2000 MHz) |
| Power Gain (G ps) | 13 dB typical at 1990 MHz |
| Input Match | Internal input matching |
| Boîtier / Format | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic flange |
| Type de montage | Surface mount / flange mount with screw attach |
| Operating Mode | Enhancement-mode (N-channel) |
| Channel Temperature (Tj max) | 200 C |
| Storage Temperature | -65 C to +150 C |
| Statut RoHS | Compliant (per NXP product page) |
| Test Conditions | 2 x N-CDMA, VDD=28V, Idq set per datasheet |
Configuration des broches de MRF5S19130HR3
| Broche 1 | Gate — RF input gate; negative bias relative to source |
| Broche 2 | Drain — RF output drain; 28 V DC bias |
| Broche CASE | Source (Flange) — RF ground / thermal mounting surface |
DC Zone de fonctionnement sûr (MRF5S19130HR3 family)
Applications typiques
MRF5S19130HR3 convient pour 6 applications: PCN / PCS 1900 MHz Base-Station Power Amplifier, 2 x N-CDMA Multicarrier Driver Amplifier, TDMA Cellular Power Amplifier Stage, Multicarrier PCS Power Amplifier Brick, Industrial RF Heating at 1900 MHz, PCS Repeater / Micro-Cell Driver.
PCN / PCS 1900 MHz Base-Station Power Amplifier
The MRF5S19130HR3's 1930-1990 MHz coverage and 26 W output make it the workhorse final-stage transistor in PCN/PCS cellular base-station power amplifier bricks. Placed in a 50 ohm reference PCB with the NXP-recommended matching network, it delivers 13 dB gain from a 28 V rail, so a single driver device can normally saturate the amplifier chain without an additional inter-stage. Compared with smaller NXP parts like MRF5S19090, this device gives nearly 30% more output power in the same ceramic NI-880H outline, allowing PA designers to consolidate SKUs and reduce BOM count across macro-cell and micro-cell sites. Thermal headroom at 26 W average from 28 V still requires a bolted heatsink on the ceramic flange.
Recommandé
2 x N-CDMA Multicarrier Driver Amplifier
The MRF5S19130HR3 is specifically characterized for 2 x N-CDMA drive to 26 W average output, which makes it ideal as the driver stage in a two-device final amplifier for high-power PCS macro-cells. Its 13 dB typical gain at 1990 MHz lets a single MRF5S19130HR3 deliver full driver power while remaining comfortably below its rated compression, so the downstream final-stage LDMOS sees a linear, low-AM/AM-conversion input. The lateral N-channel LDMOS process also provides the ruggedness required for multicarrier operation where the device must simultaneously amplify multiple CDMA carriers without back-off-induced efficiency loss.
Recommandé
TDMA Cellular Power Amplifier Stage
For 1900 MHz TDMA Class A linear amplifier stages in PCS infrastructure, the MRF5S19130HR3's 28 V bias and 13 dB gain at 26 W average provide the linear headroom needed for full-power TDMA bursts while keeping quiescent dissipation manageable. Mounted on a copper-flanged cold plate and biased per the NXP recommended Idq window, the part will deliver class-AB output with adjacent-channel power ratio (ACPR) values typical of NXP's 1900 MHz LDMOS product family. Designers often pair it with a digital predistortion loop to improve efficiency versus pure back-off.
Recommandé
Multicarrier PCS Power Amplifier Brick
Multicarrier amplifier (MCA) bricks for 1930-1990 MHz PCS service must deliver high linearity with the simultaneous presence of multiple carriers. The MRF5S19130HR3's lateral N-channel LDMOS design provides the combination of linearity, gain, and thermally-stable quiescent operation required for two-carrier N-CDMA MCA service at 26 W average output. Its ceramic NI-880H flange both simplifies heatsink integration and keeps source-lead inductance low, which is critical for stability when summing multiple drivers into the same output combiner network.
Recommandé
Industrial RF Heating at 1900 MHz
Industrial RF heating applications at 1900-2000 MHz, including plastics welding and selective dielectric heating, benefit from a robust 28 V RF power device in a thermally rugged ceramic package. The MRF5S19130HR3's 26 W average and 28 V drain make it a useful building block for sub-kilowatt industrial heaters, often combined with low-cost combining networks to scale to higher total power. Its NXP LDMOS ruggedness into mismatch protects against reflected power when the load cavity changes during the heating cycle.
Recommandé
PCS Repeater / Micro-Cell Driver
The MRF5S19130HR3 is a strong fit for the driver stage of compact PCS repeaters and micro-cell power amplifiers, where board area and BOM count dominate cost. Its 13 dB gain at 26 W from a 28 V supply means the entire PA chain can be realized with one MRF5S19130HR3 driver plus one final device in a small footprint, simplifying the repeater module's RF core. The internal input-matching network further reduces external component count, and the ceramic flange provides a direct low-inductance chassis mount.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S19130HR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF5S19130HSR3 | MRF5S19130R3 | MRF5S19130SR3 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880H-2L (CASE 465B-03) | NI-880H-2L (CASE 465B-03) - same | NI-880 (CASE 465B-04) - family | NI-880 (CASE 465B-04) - family |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz (1990 MHz tested) | 1930-1990 MHz |
| Output Power (Avg) | 26 W | 26 W | 26 W | 26 W |
| Power Gain (G ps) | 13 dB typ | 13 dB typ | 13 dB typ | 13 dB typ |
| Drain Supply | 28 V nominal | 28 V nominal | 28 V nominal | 28 V nominal |
| V(DSS) max | 65 V | 65 V | 65 V | 65 V |
| Channel Temperature (Tj max) | 200 C | 200 C | 200 C | 200 C |
| Reel/Pack Code | R3 | SR3 | R3 | SR3 |
Principaux différenciateurs
- Same NI-880H-2L ceramic flange across MRF5S19130HR3 / HSR3 / R3 / SR3 families (vs MRF5S19130R3)
- Specified for harsh 2 x N-CDMA multicarrier drive (vs MRF5S19090N)
- Mature Freescale (now NXP) 1900 MHz LDMOS process (vs Generic 1.9 GHz RF MOSFET)
Notes de conception
Estimated: at 28 V drain and 26 W average output, the LDMOS dies dissipate roughly 35-45 W as heat. The NI-880H-2L ceramic flange should be bolted to an aluminum heatsink with the datasheet-specified torque using a thin thermal-interface material. Operating in air without additional airflow is acceptable for lab evaluation but not for production; design in forced-air or cold-plate cooling to keep the flange below 80 C in a sealed outdoor BTS enclosure.
Always remove drain voltage before disconnecting the gate bias; reversing the order can put the device into avalanche and damage it. Also, gate bias must be turned on before drain voltage, with a delay of at least 5 ms between gate-ON and drain-ON events. Use the NXP recommended Idq values for class-AB operation; running too much quiescent current wastes power and reduces efficiency, while too little quiescent current causes gain compression and memory-effect distortion in CDMA waveforms.
The source lead is the ceramic mounting surface, which must be bonded to RF ground with multiple plated shorting vias to a continuous ground plane and a low-inductance chassis mount. Drain and gate traces must be 50 ohm controlled-impedance microstrip on the recommended substrate thickness (typically 10-20 mil RO4350B or similar low-loss material). Keep the gate trace away from the drain trace, and use the load-pull reference footprint from the NXP datasheet's reference PCB drawing as your starting point for first-pass tuning.
Informations de conformité
RoHS and REACH compliance confirmed per NXP product page. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-grade IC. Conflict-minerals declaration available from NXP upon request.
