MRF5S19150HSR5 - 32W RF LDMOS Power Transistor 1.93-1.99GHz | NXP
Référence : MRF5S19150HSR5 ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $128.5 | $1 285,00 |
| 100 | $112 | $11 200,00 |
| 500 | $98.75 | $49 375,00 |
| 1 000 | $89.5 | $89 500,00 |
MRF5S19150HSR5 Présentation
An RF LDMOS transistor is a specialized power MOSFET architecture optimized for radio-frequency power amplification, in contrast to small-signal MOSFETs used for switching and logic. LDMOS devices use a laterally diffused drift region to achieve high breakdown voltage, high output power density, and excellent thermal performance, making them the dominant technology for cellular base-station power amplifiers (PAs) below 3 GHz. They sit within the broader hierarchy of RF power transistors -> power amplifiers -> RF front-end components -> wireless infrastructure.
Key features include 32 W CW output power, 14 dB small-signal gain at 1.93 GHz, and a high ruggedness rating that tolerates severe load mismatches. The internally matched input structure simplifies PCB-level integration by reducing external matching component count, while the NI-880S package provides a flange-mount thermal path that enables direct bonding to a heatsink or cold plate. The transistor operates from a 28 V nominal supply with a 65 V absolute maximum drain voltage.
The MRF5S19150HSR5 uses NXP's seventh-generation LDMOS process technology, providing high power density per unit gate periphery. This architecture achieves high drain efficiency (>40% typical) and excellent linearity under both CW and W-CDMA modulation, which is critical for modern wireless standards. Internal matching networks reduce external component count and accelerate time-to-market for amplifier module designs.
Typical applications include W-CDMA, LTE, and TD-SCDMA base-station power amplifiers, RF repeaters and boosters, and industrial/scientific RF heating at the 1.93-1.99 GHz band. The part also appears in military and commercial telemetry transmitters and high-power CW oscillator stages within that band.
When designing with this device, prioritize the thermal interface: the NI-880S ceramic flange MUST be bolted to a heatsink with appropriate thermal compound, and the drain bias feed should be RF-decoupled close to the package lead. Confirm load mismatch tolerance against your antenna VSWR profile.
This page synthesizes distributor pricing, drop-in equivalents, application notes, and design considerations that complement, but do not replace, the manufacturer datasheet.
Alternatives de remplacement direct pour MRF5S19150HSR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6S19150HSR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19150HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19150HSR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6S19150HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BLF7G20LS-200
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF5S19150HSR5 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Obsolete |
| Type de transistor | LDMOS (RF Power FET) |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | 32 W (CW) |
| Power Gain | 14 dB |
| Test Voltage (Vdd) | 28 V |
| Quiescent Current (Idq) | 1.4 A |
| Drain Voltage Rating (Vds max) | 65 V |
| Boîtier / Format | NI-880S (ceramic flange mount) |
| Supplier Device Package | NI-880S |
| Type de montage | Flange / Chassis Mount |
| Technology | Laterally Diffused MOS (LDMOS) |
| Operating Mode | Class AB / CW or pulsed |
Configuration des broches de MRF5S19150HSR5
| Broche 1 | DRAIN — RF output / DC drain bias (flange-connected thermal pad) |
| Broche 2 | GATE — RF input / DC gate bias |
| Broche 3 | SOURCE — DC and RF ground (connected to mounting flange) |
MRF5S19150HSR5 Zone de fonctionnement sûr
Applications typiques
MRF5S19150HSR5 convient pour 6 applications: W-CDMA Base-Station Power Amplifier, RF Repeater and Signal Booster, TD-SCDMA Infrastructure PA, Industrial RF Heating and Drying, Military and Commercial Telemetry Transmitters, High-Power CW Oscillator Driver.
W-CDMA Base-Station Power Amplifier
The MRF5S19150HSR5 is purpose-built for the 1.93-1.99 GHz W-CDMA (UMTS Band I) base-station final-stage PA, where its 32 W Pout and 14 dB gain directly translate into the sector coverage targets of macro-cell deployments. In a typical PA line-up the device sits between a 1-2 W driver stage and the duplexer, biased at 28 V with about 1.4 A quiescent current for Class-AB linearity. Compared to a switch-mode amplifier, the LDMOS architecture preserves the adjacent-channel-leakage ratio (ACLR) required for 3GPP compliance without complex DPD correction.
Recommandé
RF Repeater and Signal Booster
Indoor and outdoor RF repeaters that re-broadcast UMTS-band signals to fill coverage holes rely on the MRF5S19150HSR5's 32 W output to drive the donor antenna while maintaining the spectral mask. The part's ruggedness to VSWR mismatch makes it tolerant of the variable antenna loads encountered in field-deployed repeaters. Used in the downlink PA, the LDMOS transistor provides cleaner EVM than bipolar alternatives, which matters for high-order QAM constellations carried on HSDPA channels within the 1.93-1.99 GHz band.
Recommandé
TD-SCDMA Infrastructure PA
TD-SCDMA networks in the 1.9 GHz band use the MRF5S19150HSR5 in macro-cell PAs where the high gain (14 dB) simplifies the line-up by reducing driver-stage count. The ceramic NI-880S package provides the thermal headroom needed for continuous downlink transmission on the TDD frame, where the PA is active up to 80% of the time. Designers benefit from the device's stable performance across temperature and its mature application-note reference designs documented by NXP for Freescale legacy networks.
Recommandé
Industrial RF Heating and Drying
At 1.93-1.99 GHz the MRF5S19150HSR5 also serves industrial RF heating applications such as plastics welding, food drying, and ceramic sintering, where the 32 W continuous-wave output is sufficient for small-batch or laboratory equipment. The device's high breakdown voltage (65 V) and rugged construction tolerate the mismatched loads that occur when wet or variable-density materials move through the applicator. The NI-880S flange simplifies thermal management in continuous-duty industrial installations.
Recommandé
Military and Commercial Telemetry Transmitters
Legacy telemetry links operating in the upper L-band use the MRF5S19150HSR5 as a final PA stage for fixed-wing and rotorcraft data downlinks. The 32 W output provides link-margin headroom for beyond-line-of-sight paths, while the ruggedness specification (typically 5:1 VSWR at all phase angles) protects the device against antenna icing and weather-induced mismatch. Its mature reliability data and decades of field deployment make it attractive for defense and aerospace sustainment programs.
Recommandé
High-Power CW Oscillator Driver
In high-power continuous-wave oscillator chains driving particle accelerators or plasma generators at 1.95 GHz, the MRF5S19150HSR5 functions as a saturated driver delivering 32 W from a 28 V rail. The Class-AB bias point keeps distortion low enough to maintain frequency stability of the master oscillator through injection locking. The NI-880S package is bolted to a water-cooled cold plate in CW service, which makes the flange-mount form factor a strong fit for fixed laboratory installations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF5S19150HSR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6S19150HSR5 | MRF5S19150HR5 | MRF5S19150HSR3 | MRF6S19150HR5 | BLF7G20LS-200 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S | NI-880S - same | NI-880S - same | NI-880 (non-flange) - related | NI-880S - same | SOT502A (NI-880S equiv.) |
| Output Power | 32 W | 32 W | 32 W | 32 W | 32 W | 200 W (overdrive) |
| Frequency Band | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.8-2.0 GHz |
| Power Gain | 14 dB | 14 dB | 14 dB | 14 dB | 14 dB | 17 dB |
| Test Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Generation / Process | 5th-gen LDMOS | 6th-gen LDMOS | 5th-gen LDMOS | 5th-gen LDMOS | 6th-gen LDMOS | 7th-gen LDMOS (Airfast) |
| Lifecycle Status | Obsolete | Last Time Buy | Obsolete | Obsolete | Last Time Buy | Active |
Principaux différenciateurs
- Established reliability and decades of field deployment in W-CDMA macro-cell PAs (vs Newer 6th/7th-gen Airfast LDMOS)
- Lower per-unit cost at broker/excess channels due to obsolete status (vs Active Airfast MRF8x/MRF9x series)
- Internally matched input structure (vs Discrete LDMOS die requiring external matching)
Notes de conception
Estimated: at Pout=32 W and drain efficiency of ~45%, the MRF5S19150HSR5 dissipates roughly 39 W as heat into the NI-880S flange. A thermal compound interface and bolted cold plate or heatsink with thermal resistance below 0.5 C/W are required to keep the junction below the 200 C maximum rating. For continuous base-station duty, active liquid cooling is recommended; passive heatsinks are sufficient only for repeater and laboratory use.
The gate and drain leads should be terminated in microstrip transmission lines matched to 50 ohms at the package reference plane. Place the drain DC-bias feed (an RF choke in series, a high-Q capacitor to ground) within 5 mm of the drain lead to minimise parasitic inductance. Use a continuous ground plane on the bottom layer and a row of via stitches along the gate/drain microstrip edges to suppress parallel-plate modes.
Do not bias the gate above 0 V without first confirming the drain supply is on - reverse bias can destroy the gate oxide. Add gate-protection Zener diodes (e.g. 10 V Zener to ground) at the gate bias input to absorb transients during hot-swapping of the drain supply. Also note that the NI-880S package contains beryllium oxide (BeO) - NEVER grind, machine, or crush the ceramic, as BeO dust is a severe inhalation hazard.
Keep the input and output matching networks physically separated to prevent stray feedback that can cause oscillation. Use separate gate and drain bias chokes with sufficient isolation (>30 dB at 1.95 GHz) and place a small series resistor (1-5 ohm) at the gate to damp out low-frequency parametric oscillations that can occur under VSWR mismatch. Refer to the NXP application note AN1908 for the canonical reference layout.
Informations de conformité
RoHS, REACH, and lead-free status for the NI-880S ceramic flange package were not confirmed in the verified web data. The NI-880S package contains beryllium oxide (BeO) ceramic which is a hazardous material requiring special handling and disposal at end-of-life regardless of RoHS status. AEC-Q100 not applicable - this is an RF power transistor, not an automotive-qualified logic/analog IC.
