MRF6S21060NBR1 - 14W, 2.11-2.17GHz RF LDMOS | NXP
Référence : MRF6S21060NBR1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $28.9 | $2 890,00 |
| 500 | $24.75 | $12 375,00 |
| 1 000 | $21.4 | $21 400,00 |
MRF6S21060NBR1 Présentation
An RF power transistor is a specialized semiconductor device that converts DC supply energy into amplified RF output power for wireless transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-3 GHz base-station power amplifiers because it combines high gain, high breakdown voltage, and excellent linearity at competitive cost versus GaN and SiGe alternatives. Within the RF power hierarchy, the MRF6S21060NBR1 sits in the 'macro-cell final-stage PA' category, where dozens of watts of average power at multi-MHz bandwidth must be delivered with low ACLR.
Key features include a 68 V drain-source voltage rating, 14 W average output power in single-carrier W-CDMA, 15.5 dB gain, and high-efficiency operation at 28 V. The device is internally input-matched and is designed to be paired with the MRF6P21190N or MRF6V21100N driver stage in Doherty or push-pull final stages, with the exposed ceramic flange (TO-272 WB-4) providing a low-thermal-impedance path to the system heatsink.
The MRF6S21060NBR1 uses NXP's sixth-generation HV6 RF LDMOS process on a ceramic-flanged package, which provides stable thermal performance under CW and pulsed operation. Its high gain reduces driver-stage requirements, while the 28 V operation balances efficiency and linearity for W-CDMA, TD-SCDMA, and multi-carrier amplifier (MCPA) topologies. According to the manufacturer datasheet, typical single-carrier W-CDMA performance is specified at VDD=28 V, IDQ=1600 mA with Pout=14 W average.
Typical applications include W-CDMA/UMTS base-station final stages, TD-SCDMA power amplifiers, multi-carrier amplifier (MCPA) line-ups, and WLL/PCN-PCS cellular radio transmitters operating in the 2110-2170 MHz downlink band.
When designing with this device, ensure the heatsink thermal design keeps the flange temperature below the 200 C rating, and use a proper RF PCB substrate (RO4350B or RO4003C) with controlled-impedance 50 ohm traces. Drain bias should be applied after gate bias to prevent thermal runaway.
This page synthesizes distributor pricing, drop-in NXP alternative part numbers, and practical PA design considerations not found in the manufacturer datasheet alone.
Alternatives de remplacement direct pour MRF6S21060NBR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF6S21060NBR1 (même facteur de forme et même empreinte) — différant par Transistor Type, Mounting Type, Manufacturer, Package / Case, Power Gain.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6S21060NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6S21140NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6V21010NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6P21190NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6V21100NR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6S21060NBR1 Valeurs maximales et caractéristiques électriques
| Type de transistor | LDMOS, N-Channel Enhancement-Mode |
| Technology | RF Power Field Effect Transistor |
| Drain-Source Voltage (Rated) | 68 V |
| Operating Frequency Range | 2110 MHz to 2170 MHz |
| Test Frequency | 2.12 GHz |
| Test Drain Voltage (VDD) | 28 V |
| Test Quiescent Current (IDQ) | 1600 mA |
| Power Gain | 15.5 dB |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W |
| Operating Mode | Class AB |
| Boîtier | TO-272 WB-4 (ceramic flanged) |
| Type de montage | Surface Mount / Flange Mount |
| Statut RoHS | compliant |
| Lead Free | yes |
| Target Application | W-CDMA base station final stage |
Configuration des broches de MRF6S21060NBR1
| Broche 1 | Gate — RF input gate bias |
| Broche 2 | Drain — RF output / drain bias (via flange) |
| Broche 3 | Source — Source / ground |
| Broche 4 | Source — Source / ground |
DC Zone de fonctionnement sûr
Applications typiques
MRF6S21060NBR1 convient pour 6 applications: W-CDMA/UMTS Base Station Final Stage, TD-SCDMA Power Amplifier, Multi-Carrier Amplifier (MCPA) Line-Up, WLL and PCN-PCS Cellular Radio, CDMA2000 1X/UMTS Shared Infrastructure, Industrial RF Heating and Drying.
W-CDMA/UMTS Base Station Final Stage
The MRF6S21060NBR1 delivers 14 W average output power across the 2110-2170 MHz UMTS downlink band with 15.5 dB gain, making it a strong fit for the final stage of macro-cell base-station power amplifiers where 14 W per transistor can be combined in a balanced or Doherty configuration for higher sector power. Its high gain (15.5 dB) reduces driver-stage gain requirements, simplifying the line-up. Tested at VDD=28 V with IDQ=1600 mA, the device offers the linearity headroom required for W-CDMA ACLR compliance.
Recommandé
TD-SCDMA Power Amplifier
The MRF6S21060NBR1 supports TD-SCDMA base-station applications in the same 2.11-2.17 GHz band as W-CDMA, providing 14 W average output power with class AB linearity. Its LDMOS technology and ceramic-flanged TO-272 WB-4 package deliver stable thermal performance under continuous TD-SCDMA duty cycles. The device's 15.5 dB gain and 68 V drain-source rating provide the headroom needed for time-division duplex (TDD) line-ups requiring high peak-to-average ratio tolerance.
Recommandé
Multi-Carrier Amplifier (MCPA) Line-Up
The MRF6S21060NBR1 is suitable for multi-carrier amplifier designs combining several W-CDMA, CDMA, or TDMA carriers into a common amplification stage. With 14 W average output and high linearity under class AB bias, it supports MCPA configurations where spectral regrowth must be tightly controlled. The TO-272 WB-4 ceramic package provides the thermal capacity required for sustained multi-carrier operation at 28 V. Used in conjunction with NXP's driver portfolio, it scales to typical 40-80 W MCPA outputs.
Recommandé
WLL and PCN-PCS Cellular Radio
The MRF6S21060NBR1 is specified for class AB operation in WLL (Wireless Local Loop) and PCN-PCS cellular radio transmitters, where its 2110-2170 MHz coverage aligns with UMTS/PCS downlink allocations. The 14 W average power level suits medium-density micro-cell or pico-cell base stations serving fixed-wireless subscribers. Its LDMOS technology offers better linearity-cost trade-offs than SiGe or GaN at this frequency and power tier, while the ceramic flange simplifies heatsink integration in compact radio units.
Recommandé
CDMA2000 1X/UMTS Shared Infrastructure
Shared radio units supporting both CDMA2000 and UMTS in the 2.1 GHz band can use the MRF6S21060NBR1 as a common final-stage device, since its frequency range and linearity are compatible with both air interfaces. The 15.5 dB gain simplifies the line-up design when targeting multiple cellular standards, and the 28 V bias point is the industry standard for sub-3 GHz base-station PAs, allowing shared power-supply designs across multi-standard radio heads.
Recommandé
Industrial RF Heating and Drying
Outside cellular infrastructure, the MRF6S21060NBR1's 14 W output and 2110-2170 MHz frequency make it usable for industrial RF heating, drying, and plasma-generation applications where 2.1 GHz energy couples efficiently into certain materials. Its high gain (15.5 dB) simplifies driver-stage design in industrial RF generators, and the robust ceramic-flanged package survives continuous industrial duty cycles. Designers must add appropriate filtering to meet any out-of-band emissions regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF6S21060NBR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6S21060NR1 | MRF6S21140NR1 | MRF6V21010NR1 | MRF6P21190NR1 | MRF6V21100NR1 |
|---|---|---|---|---|---|---|
| Package | TO-272 WB-4 | TO-272 WB-4 (same) | TO-272 WB-4 (same) | TO-272 WB-4 (same) | TO-272 WB-4 (same) | TO-272 WB-4 (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (W Avg, W-CDMA) | 14 W | 14 W | 25 W (+78%) | 10 W (-29%) | 190 W (driver tier) | 100 W |
| Operating Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Test Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Voltage Rating | 68 V | 68 V | 68 V | 65 V | 68 V | 65 V |
| RoHS / Lead-Free | Yes (NB suffix) | No (standard finish) | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Lead-free RoHS-compliant finish with same electrical performance as standard version (vs MRF6S21060NR1)
- Optimized for 14 W average output tier in macro-cell line-ups (vs MRF6V21100NR1)
- Internally matched for simplified PCB integration at 2.1 GHz (vs MRF6P21190NR1)
Notes de conception
The MRF6S21060NBR1 in the TO-272 WB-4 ceramic-flanged package must be mounted to a heatsink with thermal compound to keep the flange below 200 C. Estimated: at 14 W RF output with ~30% PAE, the device dissipates approximately 33 W DC; a heatsink with thermal resistance below 1 C/W is mandatory. Use torque-specified mounting screws (typically 0.5-0.8 N-m) to ensure uniform thermal contact and avoid flange cracking.
Build the RF input and output matching networks on RO4350B or RO4003C substrate with controlled 50-ohm microstrip traces. Keep gate and drain traces short to minimize parasitic inductance, and use multiple ground vias adjacent to the source leads. Decouple the drain bias line with 10 uF + 100 nF + 10 pF capacitors placed within 5 mm of the drain lead to suppress RF leakage into the DC supply.
Always apply gate bias BEFORE drain bias during power-up sequencing; reverse sequencing can cause thermal runaway and device destruction. Confirm quiescent current (IDQ=1600 mA) settles at the target value before enabling RF drive. Do not operate without RF drive or with the RF input disconnected while drain voltage is present, as DC-only operation drives the device into a high-dissipation state.
Separate input and output matching network ground pours to prevent feedback oscillation. Place a shielded 'wall' of ground vias between gate and drain matching networks. For multi-carrier amplifier (MCPA) applications, add a 50-ohm quarter-wave stub on the drain bias line to short RF harmonics and improve intermodulation distortion (IMD) performance.
Informations de conformité
RoHS compliant per NXP product page; 'NB' suffix indicates lead-free finish. AEC-Q100 not applicable - this is a discrete RF power transistor for base-station infrastructure, not an automotive-grade IC. Conflict minerals statement per NXP corporate policy.
