MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP
Référence : MRF6V3090NBR1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $59.04 | $59,04 |
| 10 | $56.5 | $565,00 |
| 100 | $51.2 | $5 120,00 |
| 500 | $47.8 | $23 900,00 |
| 1 000 | $44.5 | $44 500,00 |
MRF6V3090NBR1 Présentation
An RF power LDMOS is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification in the UHF band. LDMOS technology sits within the broader power MOSFET family alongside VDMOS and GaN HEMT, and is widely used as the final stage in broadcast transmitters, industrial heating sources, and aerospace RF links because it offers high gain, good efficiency, and proven long-term reliability in Class AB operation. The MRF6V3090NBR1 specifically targets the 470-860 MHz portion of UHF (with extended characterization to 1215 MHz for avionics links) where solid-state replacement of older tube amplifiers is standard practice.
Key features include 90 W CW typical output power at 860 MHz, a power gain of 22 dB at 860 MHz / 90 W, 50 V DC drain supply, integrated ESD protection, and characterized input/output series-equivalent large-signal impedance for class-AB broadband matching. The lateral MOSFET die is bonded into a high-thermal-conductivity ceramic carrier that provides low thermal resistance to the system heatsink, supporting continuous-wave operation in commercial broadcast service.
Architecturally, the device uses an enhancement-mode N-channel lateral MOSFET die where the source is tied to the package flange through the mounting surface. This construction provides the ruggedness needed for broadcast service where high VSWR is common during antenna icing or tuning transients, and the wider gate breakdown margin typical of LDMOS technology improves reliability relative to bipolar RF transistors of the same power class.
Typical applications include UHF broadcast transmitters in the 470-860 MHz TV band, commercial aerospace communications links operating near 1 GHz, industrial RF heating at UHF, and avionics transponders up to 1215 MHz. In broadcast service the part is usually driven by lower-power MRF8x LDMOS stages that together form a multi-hundred-watt amplifier chain.
When designing with this device, ensure the heatsink surface has a flatness of better than 0.001 inch and a thermal compound bond, because the ceramic package relies on direct chassis mounting to achieve its rated junction-to-case thermal resistance. Always design the output matching network against the published series-equivalent large-signal impedance data rather than small-signal S-parameters for the most accurate CW performance prediction.
This page synthesizes NXP datasheet specifications, current distributor availability, drop-in alternatives within the same TO-272 WB-4 footprint, and broadcast-band design notes in a single reference, sourced from the manufacturer datasheet (MRF6V3090N) and live distributor listings.
Alternatives de remplacement direct pour MRF6V3090NBR1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF6V3090NBR1 (même facteur de forme et même empreinte) — différant par Mounting Type, VSWR Tolerance.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6V3090NR1
✅ Remplacement direct✓ En stock
$59.9 / unité
Voir la fiche technique →MRF6V3090NR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6V3090NBR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6V4300NBR1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6V3090NBR1 Valeurs maximales et caractéristiques électriques
| Type de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application | RF Power Amplifier |
| Frequency Band | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | 90 W at 860 MHz, 50 V |
| Power Gain | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | 50 V DC |
| Drain Current (Id) | 350 mA (test condition) |
| VSWR Tolerance | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Boîtier / Format | TO-272 WB-4 (ceramic) |
| Type de montage | Surface Mount / Screw-Mount Chassis |
| Configuration | Single N-Channel MOSFET |
| Channel Mode | Enhancement-mode |
| Statut RoHS | unknown |
| Lead-Free | unknown |
| Qualification | Not Qualified (per partstack listing) |
Configuration des broches de MRF6V3090NBR1
| Broche 1 | Gate — RF input / gate bias |
| Broche 2 | Drain — RF output / DC drain supply |
| Broche 3 | Source — Source (tied to package flange / heatsink) |
| Broche 4 | Flange — Thermal mounting surface (Source) |
Zone de fonctionnement sûr
Applications typiques
MRF6V3090NBR1 convient pour 6 applications: UHF Broadcast Transmitter Final Stage, Commercial Aerospace UHF Communication Link, Industrial RF Heating and Drying, UHF TV Translator and Gap-Filler Transmitter, Public-Safety and Land-Mobile Radio Amplifier, Avionics Transponder and DME PA.
UHF Broadcast Transmitter Final Stage
The MRF6V3090NBR1's 90 W CW at 860 MHz from 50 V with 22 dB gain makes it a direct fit for UHF broadcast transmitter finals in the 470-860 MHz TV band. Used in solid-state replacement for older tube transmitters, it delivers 90 W with 10:1 VSWR tolerance at all phase angles, supporting antenna-icing and tuning transients common in broadcast towers. Placed between the interstage driver and the bandpass filter, it operates in Class AB for high linearity, and is thermally anchored directly to the transmitter chassis heatsink via its TO-272 WB-4 mounting flange for continuous-duty commercial broadcasting.
Recommandé
Commercial Aerospace UHF Communication Link
Aerospace communications links operating in the 470-1215 MHz band benefit from the MRF6V3090NBR1's broadband matching and high gain. With 50 V operation and 22 dB power gain, it serves as a Class AB final in avionics transponders, distance-measuring equipment (DME), and military UHF links where solid-state reliability outweighs tube-based alternatives. The 10:1 VSWR tolerance at full CW output provides ruggedness against antenna mismatch during flight dynamics, and the enhancement-mode gate simplifies the bias sequencer required for avionics power buses.
Recommandé
Industrial RF Heating and Drying
Industrial RF heating systems at UHF frequencies use the MRF6V3090NBR1 as a high-power source delivering tens of watts CW into resonant applicators for drying, plastic welding, and food processing. The 90 W continuous-wave output and 50 V operation provide the energy density needed for industrial heating while the LDMOS architecture's high gain reduces the number of driver stages, simplifying production cabinets. Operated in Class AB for high efficiency, the part's 10:1 VSWR tolerance protects against the load transients that are common when material properties change during a heating cycle.
Recommandé
UHF TV Translator and Gap-Filler Transmitter
Gap-filler and translator TV transmitters require compact, high-efficiency 470-860 MHz final stages with tight linearity. The MRF6V3090NBR1, biased in Class AB at 50 V, delivers 90 W CW with the 22 dB gain curve specified for 860 MHz, allowing it to drive a single mask filter after the final stage without intermediate amplification. This is essential in low-power translators where size and thermal dissipation budget are constrained; the TO-272 WB-4 ceramic package conducts heat directly into the chassis for fan-cooled or convection-cooled outdoor enclosures.
Recommandé
Public-Safety and Land-Mobile Radio Amplifier
Public-safety UHF repeaters and land-mobile radio base stations use the MRF6V3090NBR1 in Class AB final PA service for high-talk-power reliability in the 450-512 MHz band. The enhancement-mode LDMOS architecture simplifies transmitter hot-standby redundancy designs, and the 50 V rail supports both AC-fed and DC-fed PAs common in tower-top electronics cabinets. Used behind a digital pre-distortion (DPD) engine, the part provides the linearity headroom needed for modern P25 and DMR waveforms while surviving antenna-system VSWR excursions during field deployment.
Recommandé
Avionics Transponder and DME PA
Airborne transponders, DME interrogators, and TCAS equipment operate near 1030-1090 MHz with pulse-modulated RF duty, and the MRF6V3090NBR1 is characterized up to 1215 MHz for these applications. Driven by a multi-stage LDMOS chain and biased for pulse service, it delivers the long-pulse peak power required for transponder replies. The TO-272 WB-4 ceramic package is well-suited to conduction-cooled avionics racks where the heatsink is the airframe or cold-plate surface.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF6V3090NBR1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6V3090NR1 | MRF6V3090NR5 | MRF6V3090NBR5 | MRF6V4300NBR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same |
| Frequency Band | 470 to 1215 MHz | 470 to 1215 MHz | 470 to 1215 MHz | 470 to 1215 MHz | 470 to 860 MHz |
| Output Power (CW) | 90 W at 860 MHz | 90 W at 860 MHz | 90 W at 860 MHz | 90 W at 860 MHz | Higher output (>90 W), same band |
| Drain Supply Voltage | 50 V DC | 50 V DC | 50 V DC | 50 V DC | 50 V DC |
| Mounting Type | Surface / Screw-Mount Chassis | Surface / Screw-Mount Chassis | Surface / Screw-Mount Chassis | Surface / Screw-Mount Chassis | Surface / Screw-Mount Chassis |
Principaux différenciateurs
- Characterized 10:1 VSWR tolerance at full CW output (vs Generic UHF RF MOSFETs)
- Broader upper-frequency characterization to 1215 MHz (vs MRF6V4300NBR1)
- Same TO-272 WB-4 package as the rest of the NXP MRF6V family (vs Non-NXP UHF power MOSFETs)
Notes de conception
Estimated: for 90 W CW output in Class AB, the MRF6V3090NBR1 draws roughly 2.5-3 A from a 50 V DC rail at typical 50-55% drain efficiency. Power dissipation is approximately 130-150 W, which the TO-272 WB-4 chassis must reject to ambient. Mounting surface flatness of 0.001 inch and a high-quality thermal compound are mandatory to hit the published theta_jc limit.
Use a substrate layout that places the gate and drain matching networks as close to the TO-272 WB-4 leads as possible. Ground the package flange with multiple plated through-holes to a dedicated thermal land on the PCB inner layers. Keep the gate-bias track shielded from the RF drain line to prevent parasitic feedback that could cause oscillation under high-VSWR load conditions.
Always sequence the gate bias before applying the 50 V drain supply. Enabling drain voltage without proper gate quiescent current can damage the enhancement-mode LDMOS die. Also ensure the heater or chassis-mount bolt torque matches the NXP datasheet specification - over- or under-torquing the flange will distort the package thermal interface and may crack the ceramic body.
Informations de conformité
Compliance status not published in the verified distributor listings; consult the NXP MRF6V3090N datasheet environmental section directly for authoritative RoHS / REACH / lead-free declarations.
