MRF6VP2600HR5-FR - 600W LDMOS RF MOSFET 2-500MHz | Freescale
Référence : MRF6VP2600HR5-FR ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
MRF6VP2600HR5-FR Présentation
An RF power MOSFET is a discrete transistor optimized for high-frequency, high-power amplification in the megahertz to gigahertz range. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for high-power RF amplification below ~3 GHz due to its high breakdown voltage, excellent thermal performance, and simplified broadband matching compared to bipolar devices. Within the power-management hierarchy, RF power MOSFETs sit between small-signal RF transistors and vacuum tubes, serving as the active output stage in solid-state transmitters.
Key features of the MRF6VP2600HR5-FR include a 50 V drain-source breakdown rating that supports 48 V rail operation with margin, a 2.6 A continuous drain current capability, an unmatched input that enables flexible broadband matching networks, and a low thermal-resistance ceramic flange (NI-1230) for direct chassis mounting. The device is engineered to operate class AB or class C for maximum efficiency depending on linearity requirements.
The MRF6VP2600HR5-FR uses a laterally diffused MOS structure that places the source, gate, and drain contacts on the top surface, allowing gold-metallized bond-wire or ribbon attachment from the die to the flange leads. Its ceramic NI-1230 package provides excellent heat transfer from the die to an external heatsink, while the flange isolation (or non-isolation, depending on the variant) simplifies mechanical mounting in transmitter modules.
Typical applications include VHF/UHF broadcast transmitters, industrial scientific and medical (ISM) band amplifiers around 27 MHz and 81 MHz, FM broadcast linear amplifiers, two-way land-mobile radio base stations, and pulsed radar driver stages. Designers must pair it with a properly designed broadband matching network, low-loss combiner, and adequate heatsinking.
When designing with this part, ensure the matching network provides the documented 50 ohm load-pull impedance while keeping the gate bias below the 20 V maximum rating. Use of a sequenced gate-bias supply (e.g., -5 V then +5 V) protects the oxide during thermal swings.
Alternatives de remplacement direct pour MRF6VP2600HR5-FR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6VP2600HR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP2600HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRFE6VP5600HR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRFE6VP5600HR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP2600HR5-178
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP2600HR5-FR Valeurs maximales et caractéristiques électriques
| Manufacturer | Freescale Semiconductor (acquired by NXP) |
| Type de transistor | N-Channel Lateral LDMOS RF Power MOSFET |
| Drain-Source Voltage (Vdss) | 50 V (rated) |
| Continuous Drain Current (Id) | 2.6 A |
| Operating Frequency Range | 2 MHz to 500 MHz |
| Output Power (Pout) | 600 W CW (typical at rated conditions) |
| Power Gain | 25 dB typical at 225 MHz |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Boîtier | NI-1230 (ceramic flange, 5-pin) |
| Operating Mode | Class AB / Class C |
| Style de montage | Chassis / flange-mount with bolt-down |
| Input Matching | Unmatched (requires external broadband matching) |
| Suffix Meaning | -FR suffix denotes tape-and-reel factory packaging |
Configuration des broches de MRF6VP2600HR5-FR
| Broche 1 | Drain — Drain terminal (RF output, connected to DC supply via bias feed) |
| Broche 2 | Gate 1 — RF input gate (signal input) |
| Broche 3 | Gate 2 — Second gate bond pad (paired with Gate 1) |
| Broche 4 | Source — Source terminal (RF and DC ground) |
| Broche 5 | Flange — Mounting flange / thermal pad (heatsink interface) |
Zone de fonctionnement sûr
Applications typiques
MRF6VP2600HR5-FR convient pour 6 applications: VHF Broadcast Transmitter, Industrial HF Heating and Plasma Driver, Two-Way Land Mobile Radio Base Station, Scientific and Medical (ISM) RF Amplifier, Pulsed Radar Driver Stage, FM Broadcast Linear Amplifier.
VHF Broadcast Transmitter
The MRF6VP2600HR5-FR delivers 600 W CW output across the VHF broadcast band (54-216 MHz), supporting analog FM and digital TV broadcast service. Its 25 dB typical gain at 225 MHz simplifies transmitter chain design by allowing a single device to drive the antenna with adequate margin for combining losses and headroom for peak-modulation excursions. The broadband 2-500 MHz response means the same device can be reused across multiple broadcast bands simply by retuning the matching network, reducing transmitter SKUs for OEMs that ship multi-band equipment. Designers favor LDMOS over bipolar in this application because of the higher gain (reducing driver stages) and the simpler broadband bias feed network.
Recommandé
Industrial HF Heating and Plasma Driver
Industrial RF heating and plasma-generation systems operate in the 2-50 MHz range, where the MRF6VP2600HR5-FR's broadband 2-500 MHz response and 600 W CW rating provide a robust solid-state alternative to legacy vacuum-tube generators. The ceramic NI-1230 flange allows chassis-mount integration into industrial enclosures where vibration and thermal cycling would damage glass-tubed competitors. Efficiency in class C of 65-70% reduces cooling overhead compared to vacuum tubes, lowering total cost of ownership. The 50 V rail support is convenient for three-phase-rectified industrial mains, eliminating the need for complex high-voltage DC supplies.
Recommandé
Two-Way Land Mobile Radio Base Station
High-power land-mobile radio base stations in the VHF (30-50 MHz, 136-174 MHz) and UHF (450-470 MHz) bands benefit from the MRF6VP2600HR5-FR's broadband coverage, allowing a single PA design to cover multiple band splits. The 25 dB typical gain at 225 MHz reduces the number of driver stages required in the transmit chain, shrinking PCB footprint. AEC-style reliability requirements in public-safety radio demand the ruggedized ceramic package and the proven LDMOS technology that has decades of field deployment behind it. The unmatched input allows the same PA hardware to be repurposed across bands with a simple matching-network swap.
Recommandé
Scientific and Medical (ISM) RF Amplifier
ISM band applications at 13.56 MHz, 27 MHz, 81 MHz, and 433 MHz are precisely within the MRF6VP2600HR5-FR's 2-500 MHz operating envelope, making it a candidate for diathermy, MRI RF amplifiers, plasma generators, and RF drying equipment. The 600 W CW rating comfortably covers the needs of medium-power medical and scientific systems, while the LDMOS technology offers the long-term stability and predictable aging that medical certifications require. The unmatched input/output lets designers optimize efficiency at the specific ISM frequency without paying for bands the application does not need.
Recommandé
Pulsed Radar Driver Stage
Pulsed-radar driver stages at VHF/UHF use the MRF6VP2600HR5-FR in class C with brief duty cycles to deliver high peak power at low average dissipation. The 50 V drain rating accommodates radar PRF and pulse-width regimes typical of medium-range air-surveillance and weather radars. Because the device is unmatched, designers can integrate it into a tailored broadband pulse-amplifier network optimized for the specific radar waveform. The 25 dB gain at 225 MHz is sufficient to drive the power amplifier from a low-power exciter, reducing system complexity.
Recommandé
FM Broadcast Linear Amplifier
FM broadcast transmitters in the 88-108 MHz commercial band use the MRF6VP2600HR5-FR as the final PA stage in solid-state transmitters, replacing bulky tube amplifiers in favor of modern, efficient, broadband solid-state designs. Linear operation preserves the modulation fidelity required for high-fidelity stereo FM and for HD Radio digital sideband service. The 600 W CW rating allows a single PA to cover full-power Class A/B/C/D stations, with multiple parallel MRF6VP2600HR5-FR units combined for higher-power facilities. The LDMOS drain efficiency of 65-70% significantly reduces transmitter electricity costs versus tube-based designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF6VP2600HR5-FR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6VP2600HR6 | MRF6VP2600HR5 | MRFE6VP5600HR5 | MRFE6VP5600HR6 | MRF6VP2600HR5-178 |
|---|---|---|---|---|---|---|
| Brand | Freescale Semiconductor (NXP) | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230 | NI-1230 - same | NI-1230 - same | NI-1230 - same | NI-1230 - same | NI-1230 - same |
| Output Power | 600 W CW | 600 W CW | 600 W CW | 5600 W-class (higher-power family) | 5600 W-class (higher-power family) | 600 W CW |
| Drain Voltage (Vdss) | 50 V | 50 V | 50 V | 50 V (same family) | 50 V (same family) | 50 V |
| Suffix / Packaging Variant | HR5-FR (tape and reel) | HR6 (revision, no -FR) | HR5 (no -FR, tray) | 5600 W HR5 tray | 5600 W HR6 tray | HR5 -178 packaging variant |
| Technology | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS | N-channel LDMOS |
Principaux différenciateurs
- Tape-and-reel factory packaging (vs MRF6VP2600HR5 (tray))
- Same die and package as NXP MRF6VP2600HR6 (vs MRF6VP2600HR6)
- Same NI-1230 flange across the family (vs MRFE6VP5600HR5)
Notes de conception
Estimated: At 600 W CW RF output with a typical drain efficiency of 65%, the MRF6VP2600HR5-FR dissipates roughly 320 W internally. The NI-1230 ceramic flange must be mounted to a chassis or heatsink with thermal compound, with thermal resistance from junction to flange typically under 0.5 C/W (verify exact figure in the datasheet before final thermal design). For continuous broadcast service, forced-air cooling with a 200-300 LFM airflow is strongly recommended; for CW broadcast at 600 W, water cooling on the mounting surface is often used to keep Tj below 200 C.
Because the device is unmatched, the input and output matching networks - typically L-C structures on a low-loss PCB substrate such as Rogers RO4350 - must be placed immediately adjacent to the flange leads to minimize parasitic inductance and capacitance. Keep the drain DC feed network (blocking capacitor + RF choke) close to the drain lead to avoid resonant loops that can cause in-band instability. A gate-bias sequencing circuit that applies -3 to -5 V before +2 to +5 V protects the gate oxide during turn-on transitions and is recommended when operating at full rated voltage.
Do not attempt to operate the MRF6VP2600HR5-FR above 50 V on the drain - the LDMOS device will suffer avalanche breakdown. Verify load-pull impedance presented at the drain is within the datasheet-specified safe region before turning the RF drive on, and never apply RF input before stable drain bias is established. Bond-wire replacement of the gate lead, if needed, must use the same wire gauge and loop geometry to preserve the input matching network as designed.
For PCB-based matching networks the substrate should be a low-loss RF-grade material such as Rogers RO4350B or RO4003C; FR-4 is not acceptable at 500 MHz for a 600 W signal path. Copper thickness of 1 oz (35 um) minimum is required to handle the RF currents; 2 oz copper is preferred to reduce resistive losses by roughly 30%. Ensure all RF traces on the output side are kept away from the input traces and the gate bias feed-through to prevent unwanted feedback and instability.
Informations de conformité
RoHS and REACH compliance status could not be confirmed from the verified web data for this legacy part. Original MRF6VP2600 family datasheets pre-date broad RoHS adoption; designers requiring explicit RoHS compliance should contact NXP or Rochester Electronics for a current compliance letter before importing into RoHS-restricted markets.
