MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP
Référence : MRF6VP41KHR5 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $285 | $285,00 |
| 10 | $268.5 | $2 685,00 |
| 25 | $254 | $6 350,00 |
| 50 | $241.75 | $12 087,50 |
| 100 | $229.5 | $22 950,00 |
MRF6VP41KHR5 Présentation
An RF power MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor engineered to deliver high RF output power at frequencies ranging from HF through UHF. The MRF6VP41KHR5 belongs to NXP's RF Power Discrete portfolio (N-channel lateral MOSFETs), which sits within the broader power management and discrete semiconductor hierarchy. It is purpose-built for industrial, scientific, and medical (ISM) bands, broadcast, and aerospace/defense pulsed-RF systems where high peak power and ruggedness are required.
Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current at idle, 20 dB typical power gain, and 1000 W CW output power. The device supports broadband operation from 10 MHz to 500 MHz, providing flexibility for multi-band transmitters. Its NI-1230 ceramic package provides low thermal resistance for sustained high-power operation.
The transistor employs NXP's high-voltage lateral MOSFET process technology, which integrates a thermally robust die and internal matching networks optimized for broadband gain. Built-in ESD protection and high drain-source voltage tolerance enhance reliability under mismatched-load conditions. The lateral architecture delivers higher breakdown voltage and better linearity than comparable vertical MOSFETs.
Typical applications include 1000 W pulsed-RF amplifiers for industrial heating, particle accelerators, and radar transmitters operating in the 100-500 MHz range. It is also used in VHF/UHF broadcast amplifiers and high-power broadband jamming/communications systems.
When designing with the MRF6VP41KHR5, ensure adequate heat-sinking through the package flange; the device dissipates significant power at 1 kW output. Bias sequencing and drain-Voltage protection must follow NXP application note guidelines for VHV6-series devices.
This page consolidates distributor pricing, drop-in alternates, and engineering notes not aggregated in the NXP datasheet, providing additional value for procurement and RF design teams.
Alternatives de remplacement direct pour MRF6VP41KHR5 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MRF6VP41KHR5 (même facteur de forme et même empreinte) — différant par Mounting Type, Package / Case, Peak Reflow Temperature, Technology, Transistor Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF6VP41KHR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP41KHSR6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BLF6G38-100
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP41KGNR5
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BLF188XR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF6VP41KHR5 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors |
| Part Status | Active |
| Type de transistor | N-Channel Lateral MOSFET |
| Technology | MOSFET (Metal-Oxide Semiconductor) |
| Frequency Range | 10 MHz to 500 MHz |
| Drain-Source Voltage (Vds) | 50 V |
| Test Frequency | 450 MHz |
| Output Power (Pout) | 1000 W |
| Power Gain (Gp) | 20 dB |
| Drain Current (Id) | 150 mA (operating idle current) |
| Boîtier / Format | NI-1230 |
| Type de montage | Chassis Mount (flange) |
| Operating Temperature (Max) | 225 C |
| Peak Reflow Temperature | 260 C |
| Maximum Time at Peak Reflow | 40 s |
| Configuration | Single |
Configuration des broches de MRF6VP41KHR5
| Broche 1 | Drain (RF Output) — RF output via drain lead; connects to matching network |
| Broche 2 | Gate (RF Input) — RF input and DC gate bias; connects to driver stage |
| Broche 3 | Source / Flange — RF/DC ground and thermal path; chassis mount |
Zone de fonctionnement sûr (estimated based on Vds=50V, Id pulsed)
Applications typiques
MRF6VP41KHR5 convient pour 6 applications: Industrial RF Heating, Particle Accelerator RF Sources, VHF/UHF Radar Transmitters, Broadcast Amplifier Service, RF Power for Plasma Generation, Communications Jamming Systems.
Industrial RF Heating
The MRF6VP41KHR5's 1000 W output power at 450 MHz and 10-500 MHz bandwidth make it a strong fit for industrial RF heating systems including plasma generation, RF drying of textiles and paper, and dielectric heating of non-conductive materials. Industrial RF heaters typically operate in the 13.56 MHz, 27.12 MHz, or 40.68 MHz ISM bands where this device's broadband response enables flexible matching network design. The 20 dB gain reduces the drive-stage complexity, allowing a low-power exciter to drive the final amplifier with minimal intermediate stages. Compared to switching-mode RF sources, the MOSFET amplifier delivers cleaner spectral output and lower EMI, which simplifies regulatory compliance for ISM-band equipment. The 50 V drain operation balances efficiency and thermal stress, and the rugged NI-1230 package handles the load-mismatch transients common in industrial heating loads.
Recommandé
Particle Accelerator RF Sources
Particle accelerators for scientific and medical applications require stable, high-peak-power RF sources to drive accelerator cavities, typically in the 100-500 MHz range. The MRF6VP41KHR5's 1000 W CW capability and broadband response support both pulsed and CW accelerator operation. The 50 V drain rating allows direct compatibility with standard laboratory power supplies, and the 20 dB gain minimizes the chain complexity in multi-cavity installations. Lateral MOSFET technology provides excellent phase stability under amplitude modulation, critical for maintaining cavity resonance in feedback-controlled accelerator systems. The NI-1230 ceramic flange package supports the continuous-duty thermal load that CW accelerator operation demands, and the 225 C maximum junction temperature provides ample margin for high-duty-cycle pulse patterns.
Recommandé
VHF/UHF Radar Transmitters
VHF and UHF radar systems used for long-range air surveillance, coastal radar, and over-the-horizon applications require high-power transmitters operating in the 100-500 MHz spectrum. The MRF6VP41KHR5's 1000 W pulse power capability supports long-range detection requirements, while the 10-500 MHz bandwidth allows a single amplifier design to serve multiple frequency-agile radar modes. The 20 dB gain simplifies the transmitter chain, reducing both component count and system cost. The lateral MOSFET architecture handles the high-voltage standing-wave ratio (VSWR) conditions encountered during radar antenna rotation through reflective environments. Compared to bipolar or vacuum tube alternatives, this MOSFET amplifier offers smaller size, lower voltage operation, and longer MTBF - all critical for field-deployed radar installations.
Recommandé
Broadcast Amplifier Service
High-power VHF broadcast transmitters in Band I (47-68 MHz) and Band III (174-230 MHz) require broadband linear amplifiers capable of 1 kW continuous output. The MRF6VP41KHR5's 10-500 MHz bandwidth covers both VHF broadcast bands in a single amplifier chain, simplifying multi-band transmitter design. The 20 dB gain and 1000 W CW rating directly support DVB-T, DAB, and analog VHF broadcast service requirements. Lateral MOSFET technology provides excellent linearity for OFDM-modulated broadcast signals, and the 50 V operation simplifies power supply design compared to higher-voltage bipolar alternatives. The NI-1230 ceramic package supports the 24/7 continuous duty cycle of broadcast service.
Recommandé
RF Power for Plasma Generation
Semiconductor plasma processing equipment, including plasma etch and PECVD tools, requires stable RF power sources at 13.56 MHz, 27.12 MHz, 40.68 MHz, and 60 MHz ISM bands. The MRF6VP41KHR5's broadband 10-500 MHz capability covers all common plasma-generation frequencies, allowing equipment manufacturers to standardize on a single power amplifier design across product lines. The 1000 W output power supports high-density plasma tools used in advanced semiconductor manufacturing. The 50 V drain rating and lateral MOSFET technology provide excellent load-mismatch tolerance, critical when driving reactive plasma loads that present challenging impedances. The NI-1230 package supports the rigorous thermal management required for continuous-duty plasma tools.
Recommandé
Communications Jamming Systems
Military and electronic-warfare communications jamming systems require broadband high-power amplifiers that can disrupt adversary signals across multiple frequency bands. The MRF6VP41KHR5's 10-500 MHz bandwidth enables single-amplifier coverage of multiple communication bands including VHF land-mobile, UHF military aeronautical, and tactical radio bands. The 1000 W output power provides the effective radiated power needed for standoff jamming missions, and the 20 dB gain simplifies the exciter chain. The lateral MOSFET technology delivers excellent noise figure for sensitive receiver-protection applications. The rugged NI-1230 package withstands the severe environmental conditions of mobile military platforms.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF6VP41KHR5 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF6VP41KHR6 | MRF6VP41KHSR6 | MRF6VP41KGNR5 | BLF6G38-100 | BLF188XR |
|---|---|---|---|---|---|---|
| Package | NI-1230 | NI-1230 - same | NI-1230 - same | NI-1230 - same | Ceramic flange - same form factor | Ceramic flange - same form factor |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Drain-Source Voltage (Vds) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Frequency Range | 10-500 MHz | 10-500 MHz | 10-500 MHz | 10-500 MHz | HF-500 MHz | VHF/UHF |
| Technology | Lateral N-Channel MOSFET | Lateral N-Channel MOSFET | Lateral N-Channel MOSFET | Lateral N-Channel MOSFET | Lateral N-Channel MOSFET | Lateral N-Channel MOSFET |
| Test Frequency | 450 MHz | 450 MHz | 450 MHz | 450 MHz | Various | Various |
Principaux différenciateurs
- Highest power in NI-1230 VHV6 family at 1000 W (vs BLF6G38-100)
- 20 dB gain simplifies driver chain (vs BLF188XR)
- NXP VHV6 family heritage and tooling (vs MRF6VP41KGNR5)
Notes de conception
Estimated: At 1000 W RF output with ~50% drain efficiency, the MRF6VP41KHR5 dissipates approximately 1000 W as heat. The NI-1230 ceramic flange must be mounted to a substantial heatsink or cold plate with thermal compound; insufficient cooling will cause junction temperature to exceed the 225 C maximum rating and trigger thermal failure. For CW operation, forced-air cooling with a minimum 200 CFM airflow across the heatsink is recommended, or liquid cooling for high-altitude installations where air density is reduced.
The MRF6VP41KHR5 uses chassis-mount construction rather than PCB-mount, so the matching network, gate bias circuit, and drain feed network must be assembled as a separate RF circuit board or stripline on a PTFE substrate. Input and output matching networks should use high-Q ceramic capacitors and air-core or powdered-iron inductors rated for the operating current. Gate bias should be applied through a low-impedance path with RF decoupling to prevent parametric oscillation. Follow NXP's VHV6-series application note for recommended PCB layout.
Do not exceed the 50 V maximum drain-source voltage rating - inductive load transients during antenna VSWR events can easily exceed this rating without proper drain-voltage clamping. Add a TVS diode or clamping circuit at the drain feed. Always sequence gate bias BEFORE drain voltage during power-up to prevent thermal runaway; the gate threshold is typically 2-4 V. Use NXP's recommended start-up/shutdown sequencer circuit to ensure safe bias transitions.
Informations de conformité
RoHS compliance status not confirmed in the verified web data - marked [DATA_NEEDED]. Peak reflow temperature 260 C and 40 s maximum time at peak reflow temperature confirmed per FindIC/Vyrian listings. Not AEC-Q100 applicable - this is an RF power MOSFET, not an automotive-qualified IC.
