MRF7S27130HSR3 - 23W 2.7GHz WiMAX RF Power MOSFET | NXP
Référence : MRF7S27130HSR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88.5 | $885,00 |
| 100 | $82 | $8 200,00 |
| 500 | $75.5 | $37 750,00 |
| 1 000 | $69 | $69 000,00 |
MRF7S27130HSR3 Présentation
A radio-frequency power MOSFET (RF MOSFET) is a discrete transistor optimized to deliver measurable radio-frequency output power at high efficiency and gain, sitting in the hierarchy: RF MOSFET -> RF power transistor -> power semiconductor -> discrete semiconductor. Unlike small-signal MOSFETs used for logic-level translation, RF power MOSFETs are characterized for output power (W), gain (dB), drain efficiency (%) and ruggedness under mismatch, and are the building blocks of the final stage in any transmitter line-up. The MRF7S27130HSR3 is specifically engineered for OFDM-based WiMAX signals that demand high peak-to-average ratios and linear amplification.
Differentiating specifications include a drain-source breakdown voltage rated above the 28 V operating rail, an integrated ESD protection network, and a ceramic NI-780S package with bolt-down mounting for low thermal resistance to the system heatsink. The HSR3 suffix denotes a tape-and-reel, RoHS-compliant shipping option for high-volume SMT-style assembly onto matched RF carrier plates. According to the NXP datasheet, the device is also internally matched for input, simplifying the bill of materials in the typical 50-ohm reference design.
The MRF7S27130HSR3 uses a lateral N-channel DMOS structure on an advanced silicon substrate, with multiple gate fingers distributed across the die to maximize periphery-to-area ratio. This gives the device its high gain and broadband response, while the ceramic NI-780S case provides low parasitic lead inductance essential for stable operation above 2.5 GHz. Internal matching networks reduce external component count.
Typical applications include 2.5–2.7 GHz WiMAX base-station power amplifiers, broadband wireless access repeaters, and RF front-end boosters in the 2.6 GHz LTE band overlap region. The 23 W average rating supports macro-cell or micro-cell PA designs targeting mid-range EIRP outputs, and the device pairs naturally with NXP's WiMAX pre-driver and driver-stage lineup.
When designing with this MOSFET, ensure the carrier plate provides adequate thermal dissipation (target case temperature below 100 °C) and that DC blocking, RF bypass, and harmonic-filter networks are placed within 2 mm of the leads. Always sequence the gate bias before the drain supply to prevent uncontrolled RF oscillation during turn-on.
This page synthesizes verified distributor stock and pricing, drop-in NXP family alternatives, RF power dissipation design notes, and a parametric comparison table drawn from the official datasheet - information not consolidated on any single distributor page.
Alternatives de remplacement direct pour MRF7S27130HSR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF7S27130HR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S27130HS
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S27130H
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S27130HSR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Type de transistor | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | 2500 MHz to 2700 MHz |
| Test Frequency | 2.7 GHz |
| Drain Current (Id) | 1.5 A |
| Operating Drain Voltage | 28 V |
| Average Output Power (Pout) | 23 W |
| Peak Output Power | 130 W |
| Power Gain (Gps) | 16.5 dB |
| Boîtier / Format | NI-780S (ceramic, bolt-down) |
| Type de montage | Surface Mount / Chassis Mount (flanged) |
| Tape and Reel | Yes (HSR3 suffix) |
| Statut RoHS | Compliant (per NXP datasheet) |
| Technology | HV7 lateral MOSFET process |
| Application | WiMAX base station PA |
| Input Matching | Internally matched (per datasheet) |
Configuration des broches de MRF7S27130HSR3
| Broche 1 | RF Input / Gate — RF input, internally matched to 50 ohm; gate DC bias applied via internal network |
| Broche 2 | Drain — Drain DC supply (28 V nominal), RF output |
| Broche 3 | Flange (Source / GND) — Source and thermal ground, bolt-down to heatsink |
MRF7S27130HSR3 Zone de fonctionnement sûr
Applications typiques
MRF7S27130HSR3 convient pour 6 applications: WiMAX Base Station Power Amplifier, 2.6 GHz LTE Band 38 / Band 7 Base Station, Broadband Wireless Access Repeater, Industrial / Scientific RF Heating, Military / Defense RF Front-End, Commercial 2.4 GHz ISM Band Amplifier.
WiMAX Base Station Power Amplifier
The MRF7S27130HSR3 is purpose-built for 2.5–2.7 GHz WiMAX macro-cell base-station PAs. Its 23 W average output power at 28 V with 16.5 dB gain satisfies the typical EIRP budget for sectorized antennas covering 2.5 GHz and 2.6 GHz WiMAX profiles. The HV7 lateral MOSFET process provides the linearity margin needed for OFDM peak-to-average ratios, and the internally-matched input reduces external component count. Designers drop the device into a 50-ohm reference design with the datasheet's recommended harmonic-filter network, achieving >30 % drain efficiency at rated Pout. The 130 W peak headroom accommodates OFDM crest factors without compressing the average power envelope.
Recommandé
2.6 GHz LTE Band 38 / Band 7 Base Station
Although designed for WiMAX, the MRF7S27130HSR3 can be evaluated in LTE Band 7 (2620–2690 MHz) and Band 38 (2570–2620 MHz) base-station PAs that overlap the device's 2500–2700 MHz coverage. Its 130 W peak capability offers margin against LTE's 6–9 dB peak-to-average ratio, while the 16.5 dB gain reduces driver-stage gain requirements. Engineers must re-validate ACLR and EVM against the 3GPP emission mask because LTE OFDM is more demanding than fixed-WiMAX. The NI-780S bolt-down package mates directly to standard LTE PA heatsinks, enabling rapid re-use of carrier-plate layouts across WiMAX/LTE bands.
Recommandé
Broadband Wireless Access Repeater
The MRF7S27130HSR3 fits broadband wireless-access repeater and small-cell booster designs operating in the 2.5–2.7 GHz block. The 23 W continuous rating supports coverage-extension amplifiers for indoor/outdoor repeater deployments where link-budget gain is critical. Internal input matching simplifies the BOM, reducing repeater bill-of-materials cost, while the 28 V rail supports common telecom -48 V bus architectures with a 28 V intermediate point. The bolt-down NI-780S package allows direct chassis mounting inside sealed outdoor enclosures with conductive cooling.
Recommandé
Industrial / Scientific RF Heating
Industrial RF heating and plasma-generation systems operating in the 2.45–2.7 GHz ISM band can leverage the MRF7S27130HSR3's 130 W peak capability for material-processing loads. The 28 V supply is convenient for industrial bus rails, and the lateral MOSFET ruggedness tolerates partial mismatch at the applicator. The internally-matched input reduces the engineering effort to integrate the device into a custom RF generator. A cooled flange and circulator-based protection circuit are recommended to dissipate heat and isolate reflected power.
Recommandé
Military / Defense RF Front-End
The MRF7S27130HSR3 suits defense electronic-warfare and tactical-radio front-ends operating in the 2.5–2.7 GHz region, including jammers, expendable RF decoys, and line-of-sight data links. Its 23 W average power level satisfies line-of-sight ranges up to several kilometers, and the lateral MOSFET structure provides broadband response suitable for frequency-agile applications. The NI-780S bolt-down package meets MIL-STD-810 shock and vibration when properly mounted, and the RoHS-compliant lead-free finish supports modern defense electronics manufacturing restrictions.
Recommandé
Commercial 2.4 GHz ISM Band Amplifier
The MRF7S27130HSR3 can be used at the upper end of the 2.4 GHz ISM band (2450–2700 MHz), where it supports higher-power Wi-Fi 6E mesh backhaul links, RFID interrogators, and industrial telemetry transmitters. With 130 W peak headroom, designers can drive Yagi or patch antennas at ranges beyond what consumer Wi-Fi chipsets achieve. The 28 V rail simplifies integration with telecom -48 V bus architectures via a 28 V intermediate converter. Designers must add a circulator or isolator to protect the device from antenna mismatch when operating close to the ISM band edge.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF7S27130HSR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF7S27130HR3 | MRF7S27130HS | MRF7S27130H |
|---|---|---|---|---|
| Package | NI-780S | NI-780S - same | NI-780S - same | NI-780S - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Average Output Power | 23 W | 23 W | 23 W | 23 W |
| Peak Output Power | 130 W | 130 W | 130 W | 130 W |
| Power Gain | 16.5 dB | 16.5 dB | 16.5 dB | 16.5 dB |
| Frequency Range | 2500–2700 MHz | 2500–2700 MHz | 2500–2700 MHz | 2500–2700 MHz |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Drain Current | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
| Tape & Reel Suffix | R3 (HSR3) | R3 (HR3) | No reel suffix | No reel suffix |
Principaux différenciateurs
- High peak-to-average ratio margin for OFDM signals (vs MRF7S27130HR3)
- Internally matched input network (vs Discrete RF MOSFET competitors)
- HV7 lateral MOSFET process (vs Earlier-generation NXP RF MOSFETs)
Notes de conception
At 23 W average RF output from a 28 V drain supply, the MRF7S27130HSR3 dissipates significant DC power as heat through the NI-780S bolt-down flange. Mount the device directly to a machined aluminum or copper heatsink with thermal compound, keeping case temperature below 100 °C. Forced-air cooling is recommended for continuous OFDM operation. Estimated: Pdiss = (Vdd × Idc) − Pout; for Vdd = 28 V, Idc ≈ 1.5 A, Pout = 23 W, the dissipated power is roughly 19 W continuous. A heatsink rated below 2 °C/W is needed to hold Tj within margin.
RF input and output traces must be 50-ohm controlled-impedance and as short as possible. Place DC blocking, gate-bias networks, and harmonic-filter components within 2 mm of the NI-780S leads to maintain stability above 2.5 GHz. Use a star-ground topology on the carrier plate so that drain current return paths do not share traces with gate-bias returns, and keep the gate-bias line RC-decoupled with a ferrite bead to suppress VCO injection.
Always sequence the gate bias ON before the drain supply to prevent uncontrolled RF oscillation during turn-on. Add a circulator or isolator between the device and the antenna to protect against load mismatch, especially when operating close to the ISM band edge. Do not exceed the datasheet Vds maximum; never apply drain voltage without confirming the gate-bias network is functional. RoHS-compliant lead-free reflow profiles must be observed when surface-mounting adjacent components on the same PCB.
Informations de conformité
RoHS compliance confirmed per NXP datasheet (HSR3 suffix denotes RoHS-compliant lead-free shipping). AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive IC. REACH and conflict-minerals status inferred from NXP corporate compliance statements; verify with the latest manufacturer declarations for procurement.
