MRF7S38075HSR3 - 12W 3.4-3.6GHz WiMAX RF Power MOSFET | NXP
Référence : MRF7S38075HSR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $35.2 | $352,00 |
| 100 | $31.85 | $3 185,00 |
| 500 | $28.4 | $14 200,00 |
| 1 000 | $25.95 | $25 950,00 |
MRF7S38075HSR3 Présentation
What is an RF Power MOSFET? An RF power MOSFET (Radio Frequency power Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized to amplify high-frequency signals from tens of MHz into the GHz range while delivering meaningful RF output power (watts, not milliwatts). RF power MOSFETs sit in the hierarchy: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> RF power MOSFET. They are the workhorse final stage of any base-station, repeater, or solid-state power amplifier driving an antenna at VHF/UHF/microwave frequencies.
The MRF7S38075H family uses NXP's high-voltage lateral MOSFET process on a ceramic substrate (NI-780), giving it the thermal headroom needed to dissipate multi-watt RF power at S-band frequencies. Designed-in features include broadband impedance matching around the 3.5 GHz WiMAX band, integrated ESD protection structures, and a robust gold-metallized ceramic flange that bolts directly to a heatsink or pallet. The lateral geometry provides low parasitic capacitance and high drain efficiency relative to earlier-generation bipolar RF devices operating at the same band.
Typical applications include 3.5 GHz WiMAX base-station power amplifiers, LTE/5G NR mid-band driver stages, broadband wireless access (BWA) subscriber units, military multiband RF links, and S-band solid-state radar transmitters. The 14 dB gain allows the part to drive a final P1dB stage with only modest input power from a preceding gain block.
Design consideration: this is a 50 V-rated, 12 W average RF part - thermal design and PCB layout around the input/output matching network are critical. Use a properly tuned microstrip or stripline network on a low-loss RF substrate (Rogers RO4003C or similar) and mount the ceramic flange to a copper or aluminum spreader with thermal compound to keep the junction below 200 C under CW or long-pulse duty cycles.
This page synthesizes NXP datasheet specifications, current distributor stock, and pin-for-pin RF MOSFET alternatives so RF design engineers can quickly evaluate drop-in options for 3.5 GHz WiMAX amplifier designs.
Alternatives de remplacement direct pour MRF7S38075HSR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF7S38075HR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF7S38075H-1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF6S38015HSR3
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
MRF7S38075HSR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Type | RF Power MOSFET, Lateral N-Channel |
| Frequency Range | 3400 - 3600 MHz (3.4 - 3.6 GHz) |
| Output Power (Average) | 12 W |
| Power Gain (Typical) | 14 dB at 3.5 GHz |
| Drain-Source Voltage (Max) | 30 V |
| Drain Current (Continuous) | 900 mA (DC) |
| Operating Mode | Class AB (typical WiMAX) |
| Boîtier / Format | NI-780S (CASE 465-06, STYLE 1), ceramic flanged |
| Type de montage | Surface-mount / chassis-mount via flange |
| Configuration | Single N-channel MOSFET |
| Channel Type | N-Channel Enhancement-Mode Lateral |
| Target Application | WiMAX, BWA, S-band power amplifier |
| Statut RoHS | Compliant (HSR3 suffix denotes lead-free / RoHS tape-and-reel) |
| Packaging | Tape & Reel (suffix R3) |
| Datasheet Publication | 2016 (per FindIC datasheet record) |
Configuration des broches de MRF7S38075HSR3
| Broche 1 | GATE — RF input gate lead (gate bias feed) |
| Broche 2 | DRAIN — RF output drain lead (30 V DC + RF output) |
| Broche FLANGE | SOURCE — Source and thermal path (mounting flange, CASE 465-06, STYLE 1) |
Zone de fonctionnement sûr - MRF7S38075HSR3
Applications typiques
MRF7S38075HSR3 convient pour 6 applications: 3.5 GHz WiMAX Base-Station Power Amplifier, 5G NR n78 Sub-6 GHz Driver Amplifier, S-Band Solid-State Radar Transmitter, Broadband Wireless Access (BWA) Subscriber Unit, Industrial / Military Multiband RF Link, Linear Power Amplifier Driver Stage.
3.5 GHz WiMAX Base-Station Power Amplifier
The MRF7S38075HSR3's 3400-3600 MHz tuning and 12 W average output power at 30 V make it a primary candidate for WiMAX base-station final-stage PAs. With 14 dB typical gain at 3.5 GHz, the device sits between a driver gain block and the antenna feed network, delivering sufficient linear power for OFDMA burst profiles used in fixed and mobile WiMAX (IEEE 802.16e). The lateral MOSFET geometry preserves the linearity envelope required for high-PAPR OFDM signals while the ceramic NI-780S flange bolts to a heatsink for sustained base-station duty cycles.
Recommandé
5G NR n78 Sub-6 GHz Driver Amplifier
The MRF7S38075HSR3 covers the 3.4-3.6 GHz n78 5G NR TDD band used by most global sub-6 GHz 5G deployments. Its 14 dB gain allows it to drive a higher-power final stage from a small-signal front-end, while the 30 V drain and 12 W average envelope suit small-cell and macro-cell amplifier chains. Compared to GaN parts of equivalent band, the lateral silicon MOSFET offers lower cost and easier broadband matching for early 5G NR radio designs still in production.
Recommandé
S-Band Solid-State Radar Transmitter
Designed around the 3.5 GHz ISM/S-band allocation, the MRF7S38075HSR3 supports pulsed and CW operation in industrial and short-range radar transmitters. The 30 V drain rating and high drain efficiency of the lateral MOSFET geometry suit pulse-Doppler radar front-ends, while the broadband matching network allows retuning to adjacent S-band frequencies (3.0-3.8 GHz) for weather radar, altimeter, or perimeter-surveillance radar links.
Recommandé
Broadband Wireless Access (BWA) Subscriber Unit
The MRF7S38075HSR3's 12 W average power at 14 dB gain makes it well-suited for outdoor BWA subscriber unit (CPE) transmitters operating in licensed 3.5 GHz bands. Its NI-780S ceramic flange provides the ruggedized thermal path needed for outdoor pole-mount enclosures with passive cooling. The lead-free HSR3 suffix meets RoHS requirements for EU and global telecom deployments.
Recommandé
Industrial / Military Multiband RF Link
Military and industrial multiband RF links operating in the 3.4-3.6 GHz band benefit from the MRF7S38075HSR3's broadband tuning, high gain, and rugged ceramic flange construction. Its NXP/Freescale heritage as a hi-rel RF power device, combined with field-proven lateral MOSFET reliability, supports tactical radio, EW jammer, and COMINT receiver excitation chains where extended operating temperature and long product lifecycle matter.
Recommandé
Linear Power Amplifier Driver Stage
With 14 dB gain and 12 W average output, the MRF7S38075HSR3 functions as a driver stage for higher-power GaN or LDMOS final amplifiers in cellular infrastructure. Its 30 V bias and lateral geometry deliver flat gain and good linearity across the 200 MHz instantaneous bandwidth typical of OFDM-based waveforms, and the ceramic flange simplifies thermal integration into rack-mounted amplifier chassis.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF7S38075HSR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF7S38075HR3 | MRF7S38075H-1 | MRF6S38015HSR3 |
|---|---|---|---|---|
| Package | NI-780S (CASE 465-06, STYLE 1) | NI-780S (CASE 465-06) - same | NI-780H variant - same family | NI-780S (CASE 465-06) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 3400 - 3600 MHz | 3400 - 3600 MHz | 3400 - 3600 MHz | 3400 - 3600 MHz |
| Output Power (Average) | 12 W | 12 W | 12 W | ~7 W (15 W P1dB) |
| Drain-Source Voltage | 30 V | 30 V | 30 V | 30 V |
| Power Gain | 14 dB | 14 dB | 14 dB | 15 dB |
| RoHS Compliance | Yes (HSR3 lead-free) | No (tin-lead) | Yes | Yes (HSR3) |
Principaux différenciateurs
- Drop-in RoHS-compliant variant of legacy tin-lead part (vs MRF7S38075HR3)
- Same-package lower-power option for driver-stage reuse (vs MRF6S38015HSR3)
- Evaluation-board reference design available (vs MRF7S38075H-1)
Notes de conception
The NI-780S ceramic flange of the MRF7S38075HSR3 must be bolted to a copper or aluminum heatsink/spreader with thermal compound to keep junction temperature below 200 C under CW or long-pulse WiMAX duty cycles. Estimated: at 12 W RF output and ~50% DC-to-RF efficiency, the device dissipates roughly 12 W DC; a heatsink with thermal resistance below 5 C/W is recommended for 25 C ambient operation. Inadequate thermal mounting is the #1 failure mode for ceramic-flanged RF power MOSFETs.
Use a low-loss RF substrate such as Rogers RO4003C (or RO4350B) with a microstrip or stripline matching network designed for 50 ohms at 3.5 GHz. Keep the gate and drain leads as short as possible - the lead inductance directly degrades gain and stability at S-band. Place bias feed chokes (broadband RF chokes, ~100 nH) and decoupling capacitors (100 pF + 10 nF + 10 uF) within 5 mm of the gate and drain leads to prevent low-frequency oscillation.
Isolate the input (gate) matching network from the output (drain) matching network to prevent feedback oscillation - typical 3.5 GHz PA layouts require at least 6 mm of physical separation or a shielded compartment between input and output. The source-connected mounting flange provides the RF ground reference; ensure the screw-down connection has multiple grounding vias around its perimeter to maintain low-inductance ground return at 3.5 GHz.
Common pitfalls: (1) Exceeding 30 V drain supply - the device has no internal overvoltage clamp; (2) Insufficient gate bias regulation causing thermal runaway as quiescent current rises with temperature; (3) Driving the part into mismatch (high VSWR) without an isolator - lateral MOSFETs can fail catastrophically under load mismatch; (4) Using lead-free HSR3 solder profiles with peak temperatures above 260 C can crack the ceramic body; (5) Applying DC bias before RF drive, which stresses the die during turn-on transients.
Informations de conformité
RoHS compliant per HSR3 suffix designation in NXP datasheet. Tin-lead HR3 variant is NOT RoHS compliant and is for legacy/defense use only. AEC-Q100 not applicable to discrete RF power transistors.
