MRF8S9120NR3 - 33W RF Power MOSFET 865-960MHz | NXP
Référence : MRF8S9120NR3 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $132.5 | $1 325,00 |
| 50 | $121 | $6 050,00 |
| 100 | $110.75 | $11 075,00 |
| 250 | $99.5 | $24 875,00 |
MRF8S9120NR3 Présentation
A lateral N-Channel Enhancement-Mode MOSFET is the dominant transistor architecture for high-frequency RF power amplification above 500 MHz because the lateral layout minimises parasitic capacitances and supports high breakdown voltage. Within the broader taxonomy, this part is a discrete RF power MOSFET, a sub-category of power MOSFETs, which themselves belong to the discrete semiconductor family used in power management and RF front-end subsystems of macro-cell base stations and repeaters.
Key specifications include 19.8 dB typical power gain, 33 W average W-CDMA output power, 865-960 MHz operating band (700-1000 MHz usable), 28 V drain supply, and 800 mA typical quiescent drain current. The device supports Class AB and Class C operation, accommodating all major cellular modulation formats including W-CDMA, LTE, and GSM, making it a flexible final-stage building block for multi-standard base stations.
The MRF8S9120NR3 uses NXP's HV8 lateral MOSFET process, which integrates gold metallisation for high ruggedness under output mismatch (high VSWR) and ESD protection on the gate. Internal matching networks are intentionally absent, allowing the designer to set the optimum load-line impedance for the chosen frequency sub-band and modulation bandwidth.
Typical applications include W-CDMA/LTE base station final-stage power amplifiers, GSM/EDGE macro-cell transmitters, RF repeaters, and digital broadcast transmitters in the 900 MHz cellular band. Designers also use this part in industrial RF heating and pulsed-RF driver stages where high gain and 28 V operation are required.
When designing with the MRF8S9120NR3, mount the part on a copper or brass flange with sufficient thermal mass to keep the junction below the 200 C maximum rating; at 33 W average and modest efficiency, several watts must be dissipated as heat. Use a low-loss substrate such as Rogers RO4003 for the input and output matching networks and follow NXP's reference design PCB layout in the datasheet for stable operation.
This page synthesises distributor pricing, parametric drop-in alternatives, and practical design notes that go beyond the NXP datasheet, helping RF engineers shorten the selection and PCB bring-up process for 900 MHz cellular base-station final stages.
Alternatives de remplacement direct pour MRF8S9120NR3 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MRF8S9120N
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9200NR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9100NR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8P9040NR1
✅ Remplacement direct✓ En stock
$24.95 / unité
Voir la fiche technique →MRF8S7170NR3
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MRF8S9120NR3 Valeurs maximales et caractéristiques électriques
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S9120NR3 |
| Type de transistor | Lateral N-Channel MOSFET, Enhancement-Mode |
| Application | W-CDMA / cellular base station RF power amplifier final stage |
| Operating Frequency Range | 865 MHz to 960 MHz (usable 700-1000 MHz) |
| Drain Supply Voltage (VDD) | 28 V |
| Average Output Power | 33 W (W-CDMA, single-carrier) |
| Power Gain (typical) | 19.8 dB |
| Quiescent Drain Current (IDQ) | 800 mA typical |
| Boîtier | OM-780-2 (ceramic air-cavity, flange mount) |
| Type de montage | Flange / chassis mount (through-hole RF package) |
| Operating Class | Class AB, Class C |
| Modulation Formats Supported | W-CDMA, LTE, GSM/EDGE, multi-carrier |
| Lead Finish | Gold metallisation (typical for HV8 process) |
Configuration des broches de MRF8S9120NR3
| Broche 1 | DRAIN — RF output / drain (28 V VDD) |
| Broche 2 | GATE — RF input / gate bias |
| Broche 3 | FLANGE — Source / thermal mounting flange (chassis ground) |
Zone de fonctionnement sûr (DC)
Applications typiques
MRF8S9120NR3 convient pour 6 applications: W-CDMA Macro-Cell Base Station Final Stage, LTE Base Station RF Power Amplifier, GSM/EDGE Cellular Transmitter, RF Repeater and Boosting Amplifier, Industrial RF Heating and Drying, Pulsed-RF Driver for Radar and Avionics.
W-CDMA Macro-Cell Base Station Final Stage
The MRF8S9120NR3's 33 W average W-CDMA output power and 19.8 dB gain at 865-960 MHz make it the ideal final-stage amplifier for 900 MHz macro-cell base stations. At 28 V VDD the device delivers clean envelope tracking headroom for W-CDMA's 4.8 dB peak-to-average ratio, and its high ruggedness allows 10:1 VSWR survival at full drive without device damage. The OM-780-2 ceramic air-cavity package is bolted directly to the chassis heatsink for low thermal resistance.
Recommandé
LTE Base Station RF Power Amplifier
The MRF8S9120NR3 is widely deployed in 4G LTE base-station final stages operating in the 900 MHz cellular band, where its 19.8 dB gain and 33 W average power support 5-10 MHz LTE channels with up to 7 dB PAR. The HV8 lateral MOSFET process provides the linearity required for OFDM modulation, while 28 V operation gives designers headroom for envelope-tracking or average-power-tracking power supplies. Its OM-780-2 package shares a footprint with the broader MRF8 family, simplifying PCB reuse across LTE and W-CDMA designs.
Recommandé
GSM/EDGE Cellular Transmitter
Although originally optimised for W-CDMA, the MRF8S9120NR3 operates efficiently in Class C for constant-envelope GSM carriers and in Class AB for EDGE 8-PSK modulation. At 865-960 MHz the device delivers the 33 W average power required for macro-cell coverage, and its broadband matching network can be re-tuned for the lower GSM900 uplink/downlink bands. The OM-780-2 ceramic package provides the thermal mass needed for continuous CW operation at full power.
Recommandé
RF Repeater and Boosting Amplifier
In cellular repeater and signal-boosting applications, the MRF8S9120NR3 provides the high gain (19.8 dB) and 33 W output power needed to re-amplify degraded 900 MHz signals in tunnels, buildings or rural coverage zones. Its broadband input matching supports multi-carrier operation, while the ceramic OM-780-2 flange package enables compact heatsink integration in space-constrained repeater enclosures. Designers typically operate the device at reduced bias for linearity when amplifying multi-carrier signals.
Recommandé
Industrial RF Heating and Drying
The MRF8S9120NR3 is used in 900 MHz industrial RF heating and drying systems, where its 28 V VDD and 33 W average power combine with high ruggedness to survive severe output mismatch from varying load conditions. The OM-780-2 ceramic air-cavity package is bolted directly to a process-chamber heatsink, allowing continuous CW operation at full power without active cooling. Designers often bias the device in Class C for maximum efficiency (~70 %) in industrial heating.
Recommandé
Pulsed-RF Driver for Radar and Avionics
Although primarily a CW/W-CDMA part, the MRF8S9120NR3 can serve as a pulsed-RF driver in 900 MHz radar, telemetry and avionics links where short high-power bursts are required. Its 28 V VDD and high breakdown voltage enable high pulse currents, and the OM-780-2 ceramic package handles the resulting thermal cycling reliably. Designers must derate the average dissipation to keep the junction below 150 C during pulsed operation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MRF8S9120NR3 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MRF8S9120N | MRF8S9200NR3 | MRF8S9100NR3 | MRF8P9040NR1 | MRF8S7170NR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-780-2 | OM-780-2 - same | OM-780-2 - same | OM-780-2 - same | OM-780-2 - same | OM-780-2 - same |
| Frequency Range | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz | 900-1000 MHz | 700-900 MHz |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Operating Class | Class AB, Class C | Class AB, Class C | Class AB, Class C | Class AB, Class C | Class AB, Class C | Class AB, Class C |
Principaux différenciateurs
- Optimised for the 865-960 MHz cellular band with 33 W W-CDMA output and 19.8 dB gain (vs MRF8P9040NR1)
- Highest output power in the MRF8S9100 family at the same OM-780-2 footprint (vs MRF8S9100NR3)
- Higher gain than the 40 W MRF8S9200NR3 at the cost of lower Pout (vs MRF8S9200NR3)
Notes de conception
At 33 W average output power with ~32 % drain efficiency the MRF8S9120NR3 dissipates approximately 70 W as heat. The OM-780-2 ceramic flange is designed for direct chassis mounting with a thermal compound interface; without a substantial heatsink (thermal resistance below 0.5 C/W) the junction temperature will exceed the 200 C maximum. Always verify junction temperature under worst-case VSWR mismatch, not just nominal load.
Use a low-loss RF substrate such as Rogers RO4003C (or RO4350B) with 0.5 oz copper for the input and output matching networks, and keep gate and drain traces as short as possible to minimise parasitic inductance at 900 MHz. Place the gate and drain feed networks on opposite sides of the package to maximise isolation, and add a small gate-series resistor (1-5 ohm) to suppress low-frequency oscillations below 100 MHz.
Do not exceed 28 V on the drain - the MRF8S9120NR3 is not rated for 32 V operation despite some HV8 family parts tolerating it. Apply VDD only after the gate bias has reached its quiescent value, and ramp the gate bias up first on power-down to avoid forward-biasing the gate-drain junction. Always include a high-VSWR protection circuit (reflected-power detector + VDD clamp) for production designs where load mismatch is plausible.
Keep the PCB copper under the OM-780-2 mounting flange free of solder mask and use multiple ground vias around the flange mounting holes to provide a low-inductance RF ground return. Maintain at least 0.5 mm clearance between the drain matching network and any DC supply traces to prevent RF leakage into the bias supply; add a 10 uF tantalum + 0.1 uF ceramic bypass on the VDD feed close to the drain lead.
Informations de conformité
RoHS and REACH compliance not stated in the verified web data - confirm with NXP product page or your distributor. The OM-780-2 ceramic package uses gold metallisation which is compatible with lead-free solder reflow profiles. AEC-Q100 is not applicable as this is a high-power RF discrete, not an automotive-grade IC.
